A kind of nano-patterned substrate lateral epitaxial silicon-based quantum dot laser material and its preparation method

Abstract

The invention discloses a nano-patterned-substrate lateral-epitaxy silicon-based-quantum-dot laser material and a preparation method therefor and belongs to the technical field of semiconductor lasers. According to the preparation method for the laser material, seed layers, dislocation barrier layers and laser materials are formed on a monocrystalline silicon substrate, wherein the seed layers comprise a GaAs low-temperature nucleating layer and a GaAs high-temperature buffering layer; the dislocation barrier layers comprise a nano-scale patterned mask and a GaAs lateral epitaxial layer; and the laser materials comprise an N-type ohmic contact layer, an N-type limiting layer, a lower waveguide layer, a quantum-dot active area, an upper waveguide layer, a p-type limiting layer and a p-type ohmic contact layer. According to the laser material and the preparation method therefor, by the barrier action of the patterned substrate to penetrating dislocation, the dislocation density of the GaAs epitaxial layer can be effectively lowered, the crystal quality of the GaAs epitaxial layer is improved, and then, the performance and quality of the quantum-dot lasers are improved. The method can be used for completing the growth and preparation of the material in a large-area, high-repetitiveness and uniform manner, thereby better meeting the needs on industrialization.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a nano-pattern substrate lateral epitaxial silicon-based quantum dot laser material and a preparation method thereof. Background technique [0002] Microelectronics devices based on silicon materials have been driving the rapid development of modern information technology. While the requirements for data capacity and transmission rate are getting higher and higher, the requirements for the size of silicon devices are getting smaller and smaller. Therefore, silicon devices are about to face The main challenge is the limitation of metal interconnect (electrical interconnect) speed. Combining microelectronics and optoelectronic devices on a silicon-based platform, the optoelectronic integrated interconnection method can not only overcome the constraints of electrical interconnection, but also give full play to the mature process technology of microelectronic devices and...

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Problems solved by technology

[0008] In the preparation method of silicon-based III-V quantum dot laser materials, the MBE method is mostly used at present. The problem of this method is that the growth rate of the material is slow, and when preparing a thicker GaAs / Si buffer layer material, it needs too long growth time, and the preparation process is complex

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