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Magnetized CCP (Capacitively Coupled Plasma) source driven by RF and DC mixedly

A plasma source and plasma technology, applied in the field of plasma discharge, can solve problems such as low plasma density, and achieve the effects of increasing plasma density, ensuring feasibility, and reducing improvement costs

Inactive Publication Date: 2017-03-29
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects of the prior art, the object of the present invention is to provide a magnetization capacitively coupled plasma source driven by a hybrid of radio frequency and direct current, aiming at solving the problem of low plasma density of the capacitively coupled plasma source in the prior art

Method used

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  • Magnetized CCP (Capacitively Coupled Plasma) source driven by RF and DC mixedly
  • Magnetized CCP (Capacitively Coupled Plasma) source driven by RF and DC mixedly
  • Magnetized CCP (Capacitively Coupled Plasma) source driven by RF and DC mixedly

Examples

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Effect test

example 1

[0031] Example 1: Reference image 3 The structure; the hydrogen gas is introduced into the plasma chamber 1, the air pressure is controlled within the range of 10mTorr to 1Torr, the first pole plate 4 is connected to the negative DC power supply 7, the second pole plate 5 is connected to the radio frequency power supply 8, the chamber or side The walls are grounded, and energized coils or permanent magnets are placed outside the chamber to generate a magnetic field parallel to the plates. Gas discharge under the action of direct current and magnetic field can generate a large amount of hydrogen ions. Open the side wall opening 10, connect the extraction electrode 11, and extract the ion beam current from the chamber. This ion source can be widely used in various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam engraving Erosion devices, ion thrusters, and neutral beam injectors in controlled fusion devices.

example 2

[0032] Example 2: Reference figure 1 The structure; in the plasma chamber 1, fluorocarbon gas (such as carbon tetrafluoride), a mixed gas of oxygen and argon is introduced, and the air pressure is controlled in the range of about 10mTorr–100mTorr, and the first electrode plate 4 is connected to a negative direct current Power supply 7, the second pole plate 5 is connected to the radio frequency power supply 8, the substrate 6 is placed on the second pole plate 5, the chamber or the side wall is grounded, and an energized coil or permanent magnet 9 is placed outside the chamber to generate a magnetic field parallel to the pole plate. magnetic field. The high-density plasma source generated by mixed gas discharge can meet the requirements of etching manufacturing processes such as MEMS. MEMS usually uses polysilicon as the main material. This plasma source can provide a high etching rate.

example 3

[0033] Example 3: Reference figure 1 The structure; silane is passed into the plasma chamber 1, the air pressure is controlled within the range of 300mTorr–1Torr, the first plate 4 is connected to the negative DC power supply 7, the second plate 5 is connected to the radio frequency power supply 8, and the substrate 6 is placed On the second pole plate 5 , the chamber or side wall is grounded, and an energized coil or permanent magnet 9 is placed outside the chamber to generate a magnetic field parallel to the pole plate. The generated high-density and energy-controllable plasma source can be used for plasma thin film deposition, and this technology is widely used in large-scale production of amorphous silicon thin-film photovoltaic solar cells, thin-film transistors for flat panel displays and other industries.

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Abstract

The invention discloses a magnetized CCP source driven by RF and DC mixedly. The magnetized CCP source comprises a plasma discharge cavity, a gas inlet, a gas outlet, a first pole plate, a second pole plate, a substrate, a DC source, an RF power supply and a magnetic field generator, the first and second pole plates are arranged in the plasma discharge cavity in parallel, one end of the DC power supply is connected to the first pole plate, the other end of the DC power supply is grounded, one end of the RF power supply is connected to the second pole plate, the other end of the RF power supply is grounded, the substrate is arranged on the second pole plate and positioned in the surface opposite to the first pole plate, the gas inlet is arranged in one side of the plasma discharge cavity, the gas outlet is arranged in the other side of the plasma discharge cavity, the magnetic field generator is arranged outside the plasma discharge cavity, and a magnetic field generated by the magnetic field generator is parallel with the first pole plate and the second pole plate. Due to influence of the magnetic field, high-energy secondary electrons and thermions are limited in a main plasma area, the ionization degree is improved, and the plasma density is increased greatly.

Description

technical field [0001] The invention belongs to the technical field of plasma discharge, and more specifically relates to a magnetization capacitively coupled plasma source driven by radio frequency and direct current hybridization. Background technique [0002] Plasma discharge can produce chemically active species, so it is widely used to change the surface properties of materials. In the global manufacturing industry, low-temperature plasma-based material processing technology plays a vital role. For example, nearly one-third of the entire large-scale integrated circuit manufacturing process (thin film deposition, etching and ion implantation, Cleaning, etc.) is done with the aid of a plasma process. The large-scale integrated circuit manufacturing industry has been developing towards larger chip area, narrower line width and lower unit cost. At present, the international industry is developing a chip production process with a chamber diameter of 450mm. The plasma sourc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H05H1/24
CPCH01J37/32009H01J37/32091H05H1/24
Inventor 姜巍杨莎莉张雅
Owner HUAZHONG UNIV OF SCI & TECH
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