Method for preparing GO-CdS-ZnO-porous silicon composite photocatalyst

A technology of porous silicon and composite light, which is applied in the field of materials, can solve the problems of photocatalytic performance degradation and other problems, and achieve the effects of promoting effective separation and transmission, broadening the absorption range, and stabilizing the preparation system

Active Publication Date: 2017-04-26
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Zinc oxide is a direct bandgap semiconductor with a bandgap width of 3.2eV. However, the photogenerated electron-hole pairs of zinc oxide are easy to recombine rapidly, resulting in a decrease in photocatalytic performance. Therefore, researchers ha

Method used

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  • Method for preparing GO-CdS-ZnO-porous silicon composite photocatalyst

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Embodiment 1

[0019] (1) Preparation of porous silicon: ①Pretreatment of silicon material: crush and grind the silicon material to a particle size of 1μm, wash with distilled water, and then soak the cleaned silicon powder with 1wt% HF for 60 minutes, and dry it for later use ② Etching of silicon powder: use chemical method to deposit Ag nanoparticles on silicon powder at room temperature, the deposition time is 15s, and place the silicon powder deposited with Ag nanoparticles on HF and H at 25℃ 2 O 2 Etch in the mixed solution, the concentration of HF in the mixed solution is 0.1mol / L, H 2 O 2 The concentration of Ag is 0.01mol / L, and the reaction system is stirred (180 revolutions / min) under dark conditions to obtain large-scale porous silicon particles containing nano-scale pores after 280 min; ③Removal of Ag nanoparticles: the porous silicon obtained in ② Place the particles in a nitric acid solution and soak for 1 min; ④Post-treatment of porous silicon particles: filter to obtain porous s...

Embodiment 2

[0025] (1) Preparation of porous silicon: ①Pretreatment of silicon material: crush and grind the silicon material to a particle size of 80μm, wash it with distilled water, then soak the cleaned silicon powder with 10wt% HF for 45 minutes, and dry it for later use ② Etching of silicon powder: Use chemical method to deposit Cu nanoparticles on silicon powder at room temperature, the deposition time is 30s, and put the silicon powder deposited with Cu nanoparticles on HF and H at 30℃ 2 O 2 Etch in the mixed solution, the concentration of HF in the mixed solution is 1mol / L, H 2 O 2 The concentration of Cu nanoparticles is 0.1mol / L, and the reaction system is stirred (180 revolutions / min) under dark conditions for 200 minutes to obtain large-scale porous silicon particles containing nano-scale pores; ③Removal of Cu nanoparticles: the porous silicon obtained in ② Place the particles in a nitric acid solution and soak for 50 minutes; ④Post-processing of porous silicon particles: filter ...

Embodiment 3

[0031] (1) Preparation of porous silicon: ①Pretreatment of silicon material: crush and grind the silicon material to a particle size of 300μm, wash it with distilled water, then soak the cleaned silicon powder with 20wt% HF for 30 minutes, and dry it for later use ② Etching of silicon powder: deposit Au nanoparticles on silicon powder by chemical method at room temperature, the deposition time is 55s, and place the silicon powder deposited with Au nanoparticles on HF and H at 35℃ 2 O 2 Etch in the mixed solution, the concentration of HF in the mixed solution is 5mol / L, H 2 O 2 The concentration of Au nanoparticles is 1mol / L, and the reaction system is stirred (180 revolutions / min) under dark conditions for 120 minutes to obtain large-scale porous silicon particles containing nano-scale pores; ③Removal of Au nanoparticles: the porous silicon particles obtained in ② Place it in a nitric acid solution and soak for 100 minutes; ④Post-treatment of porous silicon particles: filter to o...

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Abstract

The invention discloses a method for preparing a GO-CdS-ZnO-porous silicon composite photocatalyst. The method comprises the steps: (1) preparing porous silicon by adopting a metal nanoparticle assisted etching method; (2) preparing a graphene oxide dispersion solution; (3) adding the porous silicon into a ZnO precursor solution, carrying out stirring, carrying out ultrasonic dispersion, and carrying out a reaction with a zinc nitrate solution containing PVA, which serves as a dispersant, and urotropine which serves as a complexing agent, so as to obtain a ZnO-porous silicon material; and (4) adding the graphene oxide dispersion solution and the ZnO-porous silicon into cadmium sulfate, which serves as a cadmium source, and thiourea which serves as a sulfur source, carrying out a reaction in an autoclave, and carrying out flushing and drying after the reaction is completed, thereby obtaining the GO-CdS-ZnO-porous silicon composite photocatalyst.

Description

Technical field [0001] The invention belongs to the technical field of materials, and specifically relates to a method for preparing a GO-CdS-ZnO-porous silicon composite photocatalyst. Background technique [0002] With the development of society and economy, a large amount of dye wastewater with high alkalinity, deep color and strong smell enters the environment in dye production and use, causing great harm to the ecological environment and drinking water. It also contains carcinogens such as benzene ring, amine group and azo group. The commonly used biochemical methods tend to have low degradation efficiency for water-soluble dyes. [0003] Among many pollutant control methods, photocatalytic oxidation technology is a new water treatment technology that has only appeared in the past 30 years. It originated in the 1970s when the energy crisis appeared. However, the use of semiconductor materials to catalyze the photolysis of pollutants in water is still a matter of more than t...

Claims

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Application Information

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IPC IPC(8): B01J27/04C02F1/28C02F1/30C02F101/30
CPCY02W10/37B01J27/04B01J35/004C02F1/281C02F1/30C02F2101/308
Inventor 李绍元冯琪马文会邹宇新何霄于洁万小涵吕国强雷云谢克强伍继君魏奎先杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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