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N-type monocrystalline silicon double-sided cell manufacturing method

A double-sided battery and manufacturing method technology, applied in the field of solar cells, can solve the problems of difficult process control, easy damage, high energy consumption, etc., and achieve the effect of simple process and improved efficiency

Inactive Publication Date: 2017-05-10
INNER MONGOLIA RIYUE SOLAR ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the method of silicon nitride has a positive charge and is a negative charge center, so the passivation effect on the P-type surface is very poor; silicon oxide is prepared by thermal oxidation, which requires at least 800 ° C High temperature process, high energy consumption and easy to destroy the formed PN junction morphology, the process is difficult to control

Method used

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  • N-type monocrystalline silicon double-sided cell manufacturing method
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  • N-type monocrystalline silicon double-sided cell manufacturing method

Examples

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Embodiment 1

[0095] Texturing the surface of the silicon wafer substrate 100

[0096] First, the original silicon wafer substrate 100 is ultrasonically cleaned in a mixed solution of sodium hydroxide and hydrogen peroxide, and then the first surface 110 and the second surface 120 of the silicon wafer substrate 100 are treated with the mixed solution of sodium hydroxide and texturizing additives. processing; then rinse the silicon wafer substrate 100 with a mixed solution of hydrochloric acid and hydrofluoric acid and deionized water respectively to obtain the following: figure 2 A silicon wafer substrate 100 with a light trapping structure is shown.

[0097] performing boron diffusion treatment on the first surface 110 of the silicon wafer substrate 100

[0098] Concentrated HNO at a volume ratio of 6:2:1 3 、H 2 o 2 , hydrochloric acid mixed solution, the silicon wafer substrate 100 is processed within 15 minutes, and silicon dioxide films 111 and 121 with a thickness of 2-10 nm are p...

Embodiment 2

[0129] The process steps of this embodiment are the same as those of Embodiment 1, so the description of the same content is omitted. The main difference between the two is that this embodiment omits the step of removing the PN junction around the battery through the plasma etching process, and at the same time, after the electrode is fabricated, the front edge junction is etched by laser to obtain the following Figure 19 Finished battery shown.

[0130] Unless otherwise defined, the terms used in the present invention have meanings commonly understood by those skilled in the art.

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Abstract

The invention provides an N-type monocrystalline silicon double-sided cell manufacturing method. The adopted N-type silicon wafer substrate comprises a first surface and a second surface arranged oppositely to the first surface. The method comprises steps: surface etching processing is carried out on the silicon wafer substrate; boron diffusion processing is carried out on the first surface of the silicon wafer substrate, and a boron-doped layer is obtained; at least one layer of mask is formed on the boron-doped layer; phosphorus diffusion processing is carried out on the second surface of the silicon wafer substrate, and a phosphorus-doped layer is obtained; the at least one layer of mask is removed; and electrodes are manufactured on the first surface through boron diffusion processing and the second surface through phosphorus diffusion processing, and the N-type monocrystalline silicon double-sided cell is manufactured. According to the N-type monocrystalline silicon double-sided cell manufacturing method of the invention, the process is simple, and the cell efficiency is effectively improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing an N-type single crystal silicon double-sided cell. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing renewable energy sources, solar energy is undoubtedly the most promising alternative energy source. Among all solar cells, crystalline silicon solar cells occupy an absolute dominant position in the field of photovoltaics. Among them, N-type silicon wafers have become a hot spot in the field of solar cell research and development in recent years due to their high minority carrier lifetime and almost no light-induced degradation (LID). With the continuous development of science and technology, the technical problems that plagued N-type crystalline silicon solar cells have gradually been overcome, which has greatly promoted the development of N-type crystalline silicon solar cells in terms of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 和江变邹凯郭永强郭凯华马承鸿李健段敏
Owner INNER MONGOLIA RIYUE SOLAR ENERGY TECH