Carbon-doped graphite-phase carbon nitride nanotube and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- UNIV OF JINAN
- Publication Date
- 2017-05-31
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Abstract
Description
technical field
[0001] The invention relates to a carbon-doped graphite-phase carbon nitride nanotube and a preparation method thereof, belonging to the technical field of doping and modifying preparation of semiconductor materials. Background technique
[0002] Single-phase graphitized carbon nitride (g-C 3 N 4 ) as an organic polymer semiconductor, due to its good physical and chemical properties, easy preparation, stable existence in the air, a bandgap of 2.7eV and the ability to be excited in the visible light range, it has become a new type of organic photocatalyst. It can be used in photolysis of water to generate hydrogen and oxygen, degrade organic pollutants, hydrogen storage, etc., so it can be widely used in many fields such as environment, energy, and biology.
[0003] However, due to the simple high temperature polymerization prepared bulk g-C 3 N 4 The conductivity between layers is poor, so that the recombination rate of photogenerated electrons and holes ...