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A kind of synthetic method of tri(diethylamino) tantalum tert-butyramide

A technology of diethylamino and tert-butyramide, applied in chemical instruments and methods, compounds of Group 5/15 elements of the periodic table, organic chemistry, etc., can solve the troublesome synthetic operation process, high cost, low yield, etc. problem, to achieve the effect of high reaction yield and production efficiency, easy to control, and easy to obtain

Active Publication Date: 2019-09-20
JIANGSU SINOCOMPOUND CATALYST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of this invention is to provide a kind of synthetic method of tris(diethylamino) tantalum tert-butyramide, to solve the troublesome operation process of tris(diethylamino) tantalum tert-butyramide, low yield, low purity and high cost The problem

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  • A kind of synthetic method of tri(diethylamino) tantalum tert-butyramide

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Embodiment 1

[0032] A kind of synthetic method of tri(diethylamino) tantalum tert-butyramide, the steps are as follows:

[0033] Step 1) In an argon environment or other inert gas environment, add 150 grams of tantalum pentachloride and 500 milliliters of n-nonane to No. 1 reactor, stir it evenly, and adjust and maintain No. 1 reactor temperature as - 30°C, then add 62 grams of anhydrous tert-butylamine to the No. 1 reactor while stirring, return to room temperature and react for 4 hours after the addition; Add 134 grams of pyridine into the reaction kettle, return to room temperature and react for 4 hours to obtain a mixed solution; filter the mixed solution and concentrate under low pressure to obtain a suspension of tantalum complex.

[0034] Step 2) under argon environment or other inert gas environment, add 510 milliliters of n-butyllithium n-nonane solutions (concentration is 2.5mol / L) in No. 2 reactor, adjust and keep No. 2 reactor temperature as -20°C, and under the condition of s...

Embodiment 2

[0037] A kind of synthetic method of tri(diethylamino) tantalum tert-butyramide, the steps are as follows:

[0038] 1) In an argon environment or other inert gas environment, add 150 grams of tantalum pentachloride and 500 milliliters of n-nonane in the No. 1 reaction kettle, and add 62 grams of anhydrous tert-butylamine into the No. 1 reaction kettle under stirring conditions , keep the temperature at -10°C during the addition, and return to room temperature for 6 hours after the addition; then adjust and maintain the temperature of the No. ; The mixture was filtered and concentrated under low pressure to obtain a suspension of tantalum complexes.

[0039] 2) In an argon environment or other inert gas environment, add 510 milliliters of n-butyllithium n-nonane solution (concentration is 2.5mol / L) in No. Add 95 g of diethylamine dropwise to the kettle, control the rate of dropping and keep the temperature of the solution at -10°C, return to room temperature and react for 5 ho...

Embodiment 3

[0042] In an argon environment or other inert gas environment, add 150 grams of tantalum pentachloride and 500 milliliters of n-nonane in the reaction kettle, and add 62 grams of anhydrous tert-butylamine in the reaction kettle under stirring conditions, and keep the temperature when adding At -15°C, the reaction was resumed at room temperature for 5 hours after the addition, and then 134 g of pyridine was added. During the addition, the temperature of the system was maintained at -15°C, and the reaction was resumed at room temperature for 5 hours after the addition. Filter and concentrate under low pressure to obtain a suspension of tantalum complex.

[0043]Under an argon atmosphere or other inert gas atmosphere, add 510 milliliters of n-butyllithium n-nonane solution (concentration: 2.5mol / L) to the reaction kettle, and add diethyl ether dropwise to the reaction kettle under stirring condition. Amine 95g, control the rate of dropping and keep the temperature of the solution...

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Abstract

The invention discloses a synthesis method of tri(diethylamino) tert-butyl amide tantalum, wherein the synthesis method comprises the following steps: 1) carrying out a mixed reaction of tantalum pentachloride and alkane, adding tert-butylamine, carrying out a reaction, then adding pyridine, carrying out a reaction, and thus obtaining a tantalum complex suspension after the reaction is completed; 2) adding diethylamine into an n-butyllithium.alkane CnH2n+2 solution, then adding the tantalum complex suspension of the step 1), and carrying out a reaction; and 3) removing a by-product lithium chloride of the liquid obtained from the reaction by a solid-liquid separator, transferring the obtained solution to a distiller, firstly, distilling off a CnH2n+2 alkane solvent with reduced pressure, and then distilling off the product tri(diethylamino)tert-butyl amide tantalum with reduced pressure. The synthesis method solves the problems of troublesome operation, low yield, low purity and high cost in the synthesis operation process of tri(diethylamino)tert-butyl amide tantalum.

Description

technical field [0001] The invention relates to the field of material production, in particular to a method for synthesizing tantalum tris(diethylamino)tert-butyramide. Background technique [0002] Tantalum nitride film has excellent physical and chemical properties, such as good wear resistance, high hardness, and good chemical stability, and is an important high-tech material. With the deepening of research, its good electrical properties, biocompatibility and other excellent properties have been gradually discovered and applied in various fields. Since tantalum nitride film not only has good thermal stability but also has relatively good oxidation resistance, thermal stability and work function tunability, and still has good optical properties at higher temperatures, it is widely used in the semiconductor industry. , tantalum nitride thin film is an ideal metal gate material, widely used in metal oxide semiconductor field effect transistor (MOS-FET). At present, the ap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F9/00
Inventor 曹季卢红亮丁士进刘兵武储文祥龚云龙薛姣
Owner JIANGSU SINOCOMPOUND CATALYST