Method for preparing graphene on silicon base without metal catalyst
A catalyst and graphene technology, applied in metal material coating process, gaseous chemical plating, vacuum evaporation plating, etc., can solve the problems of graphene quality instability, unfavorable large-scale production, high cost of metal materials, etc., to achieve good results Effects of thermal and chemical stability, uniform lattice orientation, and good crystallization quality
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Embodiment 1
[0056] The present invention adopts radio frequency magnetron sputtering technology and chemical vapor deposition method, uses hexagonal boron nitride target as magnetron sputtering target material, and uses silicon base with crystal orientation of 300nm silicon dioxide as sputtering substrate .
[0057] (1) Pump the background air pressure in the sputtering chamber to 6×10 -4 Below Pa, feed nitrogen: argon = 6:24 (unit: sccm);
[0058] (2) After adjusting the glow, pre-sputter for 30 minutes;
[0059] (3) Raise the temperature of the substrate to 500°C, adjust the sputtering pressure to 0.5Pa, and adjust the sputtering power to 100W;
[0060] (4) The sputtering time is 30min, and the boron-nitrogen film thickness is 280nm at this moment;
[0061] (5) Take out the sample after cooling down to room temperature;
[0062] (6) annealing at 600°C for 2 hours in a vacuum tube resistance furnace in an argon atmosphere;
[0063] (7) Vacuumize to 20Pa in the vacuum tube type resi...
Embodiment 2
[0068] The present invention adopts radio frequency magnetron sputtering technology and chemical vapor deposition method, uses hexagonal boron nitride target as magnetron sputtering target material, and uses silicon substrate with crystal direction of 200nm silicon dioxide as sputtering substrate .
[0069] (1) Pump the background air pressure in the sputtering chamber to 6×10 -4 Below Pa, feed nitrogen: argon = 8:32 (unit: sccm);
[0070] (2) After adjusting the glow, pre-sputter for 40 minutes;
[0071] (3) Raise the temperature of the substrate to 500°C, adjust the sputtering pressure to 0.5Pa, and adjust the sputtering power to 100W;
[0072] (4) The sputtering time is 30min, and the boron-nitrogen film thickness is 280nm at this moment;
[0073] (5) Take out the sample after cooling down to room temperature;
[0074] (6) annealing at 600°C for 3 hours in a vacuum tube resistance furnace in an argon atmosphere;
[0075] (7) Vacuumize to 20Pa in the vacuum tube type r...
Embodiment 3
[0080] The present invention adopts radio frequency magnetron sputtering technology and chemical vapor deposition method, uses hexagonal boron nitride target as magnetron sputtering target material, and uses silicon substrate with crystal direction of 300nm silicon dioxide as sputtering substrate .
[0081] (1) Pump the background air pressure in the sputtering chamber to 6×10 -4 Below Pa, feed nitrogen: argon = 5:20 (unit: sccm);
[0082] (2) After adjusting the glow, pre-sputter for 60 minutes;
[0083] (3) Raise the temperature of the substrate to 500°C, adjust the sputtering pressure to 0.5Pa, and adjust the sputtering power to 100W;
[0084] (4) The sputtering time is 30min, and the boron-nitrogen film thickness is 280nm at this moment;
[0085] (5) Take out the sample after cooling down to room temperature;
[0086] (6) annealing at 600°C for 3 hours in a vacuum tube resistance furnace in an argon atmosphere;
[0087] (7) Vacuumize to 20Pa in the vacuum tube type r...
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