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Preparation method and application of bismuth metal auto-doping halogenated bismuth oxide

A bismuth oxyhalide, self-doping technology, applied in chemical instruments and methods, bismuth compounds, inorganic chemistry, etc., to achieve the effects of high detection sensitivity, low cost consumption, and obvious practicability

Inactive Publication Date: 2017-07-11
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there has been no report on the synthesis of Bi / BiOX (X=Cl,Br,I) by solvothermal one-step method and its photoelectric properties.

Method used

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  • Preparation method and application of bismuth metal auto-doping halogenated bismuth oxide
  • Preparation method and application of bismuth metal auto-doping halogenated bismuth oxide
  • Preparation method and application of bismuth metal auto-doping halogenated bismuth oxide

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Embodiment 1

[0036] (1) The preparation of bismuth oxychloride monomer material is that solvothermal reaction one-step method makes: at first, take the 1-hexadecyl-3-methylimidazolium chloride salt of 1mmol ([C 16mim]Cl) ionic liquid into a 25mL polytetrafluoroethylene-lined reactor, secondly, pipette 20mL of ethylene glycol solution into the kettle, and fully dissolved. Add 1 mmol of bismuth nitrate pentahydrate into the kettle, and keep stirring for half an hour until the mixture is uniform. After reacting at 160°C for 24h, it was naturally cooled to room temperature; the final product was washed with alcohol, washed with water, centrifuged, and dried at 50°C for 12h to obtain BiOCl.

[0037] (2) The preparation of bismuth oxychloride material self-doped with bismuth metal is to reduce bismuth nitrate pentahydrate to obtain by glucose: first, weigh 1mmol of 1-hexadecyl-3-methylimidazolium chloride salt ( [C 16 mim]Cl) ionic liquid into a 25mL polytetrafluoroethylene-lined reactor, seco...

Embodiment 2

[0042] (1) The preparation of bismuth oxybromide monomer material is that solvothermal reaction one-step method makes: at first, take the 1-hexadecyl-3-methylimidazolium bromide ([C 16 mim] Br) of the ionic liquid into a 25mL polytetrafluoroethylene-lined reactor, and secondly, pipette 20mL of ethylene glycol solution into the kettle, and fully dissolved. Add 1 mmol of bismuth nitrate pentahydrate into the kettle, and keep stirring for half an hour until the mixture is uniform. After reacting at 140°C for 24h, it was naturally cooled to room temperature; the final product was washed with alcohol, washed with water, centrifuged, and dried at 50°C for 12h to obtain BiOBr.

[0043] (2) The preparation of bismuth oxybromide material self-doped with bismuth metal is to reduce bismuth nitrate pentahydrate to obtain by glucose: first, weigh 1mmol of 1-hexadecyl-3-methylimidazolium bromide ( [C 16 mim] Br) of the ionic liquid into a 25mL polytetrafluoroethylene-lined reactor, and se...

Embodiment 3

[0048] (1) The preparation of bismuth oxyiodide monomer material is obtained by solvothermal reaction one-step method: first, the ionic liquid of 1-butyl-3-methylimidazolium iodide salt ([Bmim]I) that takes 1mmol is put into 25mL In a polytetrafluoroethylene-lined reaction kettle, secondly, pipette 20mL of ethylene glycol solution into the kettle and fully dissolve it. Add 1 mmol of bismuth nitrate pentahydrate into the kettle, and keep stirring for half an hour until the mixture is uniform. After reacting at 160°C for 24h, it was naturally cooled to room temperature; the final product was washed with alcohol, washed with water, centrifuged, and dried at 50°C for 12h to obtain BiOI.

[0049] (2) Bismuth metal self-doped bismuth oxyiodide material is prepared by reducing bismuth nitrate pentahydrate by glucose: first, weigh 1 mmol of 1-butyl-3-methylimidazolium iodide ([Bmim ] The ionic liquid of I) is put into 25mL polytetrafluoroethylene-lined reactor, secondly, pipette 20mL...

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Abstract

The present invention provides a method for preparing bismuth metal self-doped bismuth oxyhalide and its application, which is carried out according to the following steps: first, take the ionic liquid containing halogen and put it into a polytetrafluoroethylene-lined reaction kettle, Next, add ethylene glycol and fully dissolve it; then add glucose and bismuth pentahydrate bismuth nitrate into the reaction kettle and stir until they are evenly mixed; carry out constant temperature thermal reaction, and naturally cool to room temperature after the reaction is completed; wash the solid product with alcohol , washed with water, centrifuged and dried to obtain a bismuth metal self-doped bismuth oxyhalide material. The electrode material used in the present invention is bismuth oxyhalide self-doped with bismuth metal that responds in the visible light region. Its superior photoelectric properties have been explored, and the application of bismuth oxyhalide-based materials in the field of optoelectronics has been broadened, and it has also found new opportunities for photoelectric detection. A new type of material.

Description

technical field [0001] The invention relates to the field of photoelectrochemical materials, in particular to a preparation method of bismuth metal self-doped bismuth oxyhalide and its application. Background technique [0002] In recent years, photoelectrochemistry (PEC), as a newly developed technology, has received global attention and has been widely used in fields such as photolysis of water, pollutant degradation, solar energy conversion, and biosensing. The photoelectrochemical process is the process of photoelectricity generation, that is, the photosensitive material is excited by electrons under light irradiation, and the charge is transferred to the electrode surface in the form of electron transfer to generate electrochemical signals. When the energy of the irradiating light is equal to or greater than the energy of the semiconductor band gap (Eg), electrons (e - ) is excited to transition from the valence band to the conduction band, and a hole (h + ), electron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24C01G29/00G01N21/75G01N27/30
CPCB22F9/24B22F2009/245C01G29/00G01N21/75G01N27/30
Inventor 严鹏程徐丽凌思雁莫曌夏杰祥李华明
Owner JIANGSU UNIV
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