Preparation method and application of bismuth metal auto-doping halogenated bismuth oxide
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU UNIV
- Publication Date
- 2017-07-11
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of photoelectrochemical materials, in particular to a preparation method of bismuth metal self-doped bismuth oxyhalide and its application. Background technique
[0002] In recent years, photoelectrochemistry (PEC), as a newly developed technology, has received global attention and has been widely used in fields such as photolysis of water, pollutant degradation, solar energy conversion, and biosensing. The photoelectrochemical process is the process of photoelectricity generation, that is, the photosensitive material is excited by electrons under light irradiation, and the charge is transferred to the electrode surface in the form of electron transfer to generate electrochemical signals. When the energy of the irradiating light is equal to or greater than the energy of the semiconductor band gap (Eg), electrons (e - ) is excited to transition from the valence band to the conduction band, and a hole (h + ), electron...