Titanium diboride-zirconium diboride coating with periodic multilayer structure and its preparation method and application
A technology of titanium diboride and zirconium diboride, which is applied in the direction of coating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of high brittleness, poor bonding force between film and substrate, and low hardness, and achieve Low cost, convenient operation and short preparation cycle
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Embodiment 1
[0034] S1. Cleaning the substrate: send the polished WC-Co cemented carbide substrate into an ultrasonic cleaning machine, and use acetone and absolute ethanol to perform ultrasonic cleaning at 30kHz for 10 minutes, then clean it with deionized water, and then clean it with purity ≥ 99.5% nitrogen blow dry.
[0035] S2. Vacuuming and ion beam etching to clean the cavity and substrate: install TiB on the ion coating machine 2 and ZrB 2 For ceramic targets, clean the coating chamber with a high-power vacuum cleaner; place the ultrasonically cleaned substrate on the workpiece support in the vacuum chamber, and pump it to a vacuum of 5.0×10 -3 Below Pa, then turn on the ion source, pass 80sccm argon gas into the ion source, set the ion source power to 0.9kW, set the workpiece support bias to -300V, and the etching cleaning process lasts for 20min.
[0036] S3. Ion beam etching substrate: rotate the turret, place the substrate in front of the ion source, set the bias voltage to -...
Embodiment 2
[0043] S1. Cleaning the substrate: send the polished (100) oriented single crystal silicon substrate into an ultrasonic cleaning machine, perform ultrasonic cleaning with acetone and absolute ethanol at 30kHz for 10min respectively, then rinse with deionized water, and then use Nitrogen with a purity ≥ 99.5% is blown dry.
[0044] S2. Vacuuming and ion beam etching to clean the cavity and substrate: install TiB on the ion coating machine 2 and ZrB 2 For ceramic targets, clean the coating chamber with a high-power vacuum cleaner; place the ultrasonically cleaned substrate on the workpiece support in the vacuum chamber, and vacuum the vacuum chamber to a vacuum of 5.0×10 -3 Below Pa, then turn on the ion source, feed 80sccm argon gas into the ion source, set the ion source power to 0.9kW, set the workpiece support bias to 300V, and the etching and cleaning process lasts for 20min.
[0045] S3. Ion beam etching substrate: rotate the turret, place the substrate in front of the i...
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