Method for transferring and preparing two-dimensional atomic crystal laminated structure

A two-dimensional atomic crystal, stacked structure technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of bubble generation, small sample area, easy sample breakage, etc., to reduce doping and damage, The effect of high separation repetition rate and easy residual glue disposal

Active Publication Date: 2017-09-15
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, the advantage of using mechanical exfoliation to prepare two-dimensional atomic crystal stack structures is that there is less glue residue, and the residual glue treatment is relatively easy, but the disadvantage is that it is very difficult to prepare a single-layer two-dimensional atomic crystal sample, and the peeling The sample is easily broken, the sample area is small, and the technical proficiency is high, and the success rate of preparing the laminated structure sample is low, the repetition rate is low, and the preparation process takes a long time, which is not conducive to practical application
This method uses PMMA to transfer two-dimensional atomic crystals and needs to etch

Method used

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  • Method for transferring and preparing two-dimensional atomic crystal laminated structure
  • Method for transferring and preparing two-dimensional atomic crystal laminated structure
  • Method for transferring and preparing two-dimensional atomic crystal laminated structure

Examples

Experimental program
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Example Embodiment

[0037] Example 1

[0038] The positioning transfer technology is suitable for the preparation of CVD-grown two-dimensional nanomaterials stacked structure (homojunction and heterojunction) to transfer tungsten disulfide (WS) grown on a sapphire substrate 2 / Sapphire) Molybdenum disulfide (MoS 2 / SiO 2 ), to prepare a two-dimensional atomic crystal heterojunction as an example, specifically including the following steps:

[0039] (1) Prepare a polystyrene (PS) solution with toluene as the solvent, and dissolve the PS by heating and magnetic stirring.

[0040] (2) Prepare dimethyl siloxane (PDMS), mix the main agent (Glue A) and hardener (Glue B), remove air bubbles in the mixed colloid by centrifugation, pour it until the container is still, control the thickness to about 1 mm, and bake Curing

[0041] (3) Glue, in WS 2 / Sapphire surface spin-coated PS solution and heated for 30 minutes, drying toluene solvent;

[0042] (5) Use tweezers to transfer PS / WS 2 / Sapphire substrate is peeled ...

Example Embodiment

[0048] Example 2

[0049] The experimental method is the same as in Example 1. The single-layer MoS 2 Replace with single layer WS 2 ,Positioning transfer to prepare two layers of WS 2 Homogeneous junction.

Example Embodiment

[0050] Example 3

[0051] The experimental method is the same as in Example 1, the only difference is that the single-layer molybdenum disulfide is replaced by molybdenum trioxide nanosheets, and the WS prepared by positioning transfer 2 / MoO 3 Heterojunction.

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Abstract

The invention discloses a method for transferring and preparing a two-dimensional atomic crystal laminated structure and relates to a stripping, positioning and transferring method for substrate-based two-dimensional atomic crystal film. The method comprises the specific steps of carrying out spin-coating on the surface of the two-dimensional atomic crystal film through utilization of polystyrene film, wherein the two-dimensional atomic crystal film is prepared based on a substrate; separating two-dimensional atomic crystals from the substrate through utilization of water tension and transferring the two-dimensional atomic crystals to dimethyl siloxane polymer; attaching the two-dimensional atomic crystals/polystyrene/dimethyl siloxane polymer on a target material through utilization of the van-der waals force; and separating the dimethyl siloxane polymer in a heating mode and removing the polystyrene through utilization of toluene solution or a vacuum annealing method, namely preparing the two-dimensional atomic crystal laminated structure. The method is simple in operation and is high in success rate, is fast and can be widely applied to the field of a large-area ultra-thin material photoelectric sensor.

Description

technical field [0001] The invention relates to the technical field of positioning transfer, and more specifically, to a method for preparing a two-dimensional atomic crystal stack structure by transfer. Background technique [0002] New two-dimensional atomic crystals include graphene, boron nitride, black phosphorus and two-dimensional transition metal chalcogenides, such as: molybdenum disulfide, molybdenum diselenide, molybdenum ditelluride, tungsten disulfide, tungsten diselenide and Tungsten ditelluride, etc., which have unique properties of force, heat, electricity, and light, have attracted the attention of researchers. Then people have also carried out a series of studies based on new two-dimensional atomic-level stacked structures, among which the preparation of ultra-thin two-dimensional The stacked structure of atomic crystals has become a research hotspot in the application field of optoelectronic materials and devices, such as high electron mobility tunnel fiel...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L21/18
CPCH01L21/187H01L21/7806
Inventor 陈焕君温锦秀邓少芝许宁生
Owner SUN YAT SEN UNIV
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