Method for transferring and preparing two-dimensional atomic crystal laminated structure
A two-dimensional atomic crystal, stacked structure technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of bubble generation, small sample area, easy sample breakage, etc., to reduce doping and damage, The effect of high separation repetition rate and easy residual glue disposal
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[0037] Example 1
[0038] The positioning transfer technology is suitable for the preparation of CVD-grown two-dimensional nanomaterials stacked structure (homojunction and heterojunction) to transfer tungsten disulfide (WS) grown on a sapphire substrate 2 / Sapphire) Molybdenum disulfide (MoS 2 / SiO 2 ), to prepare a two-dimensional atomic crystal heterojunction as an example, specifically including the following steps:
[0039] (1) Prepare a polystyrene (PS) solution with toluene as the solvent, and dissolve the PS by heating and magnetic stirring.
[0040] (2) Prepare dimethyl siloxane (PDMS), mix the main agent (Glue A) and hardener (Glue B), remove air bubbles in the mixed colloid by centrifugation, pour it until the container is still, control the thickness to about 1 mm, and bake Curing
[0041] (3) Glue, in WS 2 / Sapphire surface spin-coated PS solution and heated for 30 minutes, drying toluene solvent;
[0042] (5) Use tweezers to transfer PS / WS 2 / Sapphire substrate is peeled ...
Example Embodiment
[0048] Example 2
[0049] The experimental method is the same as in Example 1. The single-layer MoS 2 Replace with single layer WS 2 ,Positioning transfer to prepare two layers of WS 2 Homogeneous junction.
Example Embodiment
[0050] Example 3
[0051] The experimental method is the same as in Example 1, the only difference is that the single-layer molybdenum disulfide is replaced by molybdenum trioxide nanosheets, and the WS prepared by positioning transfer 2 / MoO 3 Heterojunction.
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