Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconductor alloy film with continuously and gradually changing component, and preparation method and application of semiconductor alloy film

A technology of alloy film and semiconductor, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of heavy workload and prone to accidental errors, and achieve the effects of less time-consuming, good stability, and favorable charge transmission

Active Publication Date: 2017-10-13
HUAZHONG UNIV OF SCI & TECH
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation method of semiconductor alloys is mainly based on the solution method. Adjusting one component at a time requires a heavy workload and is prone to accidental errors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor alloy film with continuously and gradually changing component, and preparation method and application of semiconductor alloy film
  • Semiconductor alloy film with continuously and gradually changing component, and preparation method and application of semiconductor alloy film
  • Semiconductor alloy film with continuously and gradually changing component, and preparation method and application of semiconductor alloy film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Sb with continuous gradient of composition 2 (Se x S 1-x ) 3 Semiconductor alloy thin film and its preparation method, wherein the percentage composition of selenium varies from 0.09 to 0.84. Specifically include the following steps:

[0045] (1) Selection and processing of the substrate: cut the FTO into a size of 6×2.5cm 2 For cleaning, use deionized water, acetone, and absolute ethanol for ultrasonic decontamination, then blow dry with high-purity nitrogen, and after UV and ozone treatment for 20 minutes, prepare 60nm TiO by spray pyrolysis on FTO 2 The thin film, as the substrate on which the alloy was deposited, was then heated on a hot stage at 450°C for 10 minutes.

[0046] (2) Preparation of evaporation source: Weigh 0.23g of antimony sulfide and 0.45g of antimony selenide respectively, use a 50-mesh sieve to sieve the two kinds of powders separately, remove the oversized particles, and then sprinkle the two kinds of powders evenly In size 2.5 x 2.5cm 2 a...

Embodiment 2

[0051] Bi with continuous gradient of composition 2 (Se x S 1-x ) 3 Semiconductor alloy thin film and its preparation method, wherein the percentage composition of selenium varies from 0.12 to 0.69. Specifically include the following steps:

[0052] (1) Selection and processing of the substrate: this step is the same as step (1) in Embodiment 1.

[0053] (2) Preparation of evaporation source: Weigh 0.26g of bismuth sulfide and 0.66g of bismuth selenide respectively, use a 50-mesh sieve to sieve the two kinds of powders separately, remove the oversized particles, and then spread the two kinds of powders evenly In size 2 x 2.5cm 2 and 4×2.5cm 2 On the glass plane, the density of its distribution is 0.10mmol / cm 2 .

[0054] (3) Preparation of the semiconductor alloy thin film: this step is the same as step (3) in Example 1.

[0055] The change range of the selenium component in the obtained alloy on the X-axis direction is 0.12-0.69. Since different materials have differ...

Embodiment 3

[0057] amorphous Sb 2 (Se x S 1-x ) 3 Semiconductor alloy thin film and its preparation method. Specifically include the following steps:

[0058] (1) Selection and processing of the substrate: this step is the same as step (1) in Embodiment 1.

[0059] (2) Preparation of evaporation source: This step is the same as step (2) in Example 1.

[0060] (3) prepare this semiconductor alloy thin film: according to such as Image 6 The schematic diagram of the structure places the antimony sulfide evaporation source 5, the antimony selenide evaporation source 7 and the substrate sample 8. The two planar evaporation sources are spliced ​​on the aluminum nitride sheet 6 and placed at the bottom of the tray support 3, and the substrate 8 is upside down on the On the tray support 3, ensure that the distance between the substrate and the evaporation source is 1 cm, add a ceramic heat-conducting cover plate 9 on the back of the substrate (here replace the graphite heat-conducting cove...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor alloy film with a continuously and gradually changing component, and a preparation method and application of the semiconductor alloy film. The film is characterized in that the film is a ternary sulfur-selenium compound alloy, the selenium component can be continuously and gradually changing in an X axis direction and be basically unchanged in a Y axis direction and a Z axis direction; the semiconductor alloy film with the continuously and gradually changing component is taken as a good light absorption layer and is used for a thin film solar cell array and a photoelectric detector. The preparation method of the semiconductor alloy film comprises the following steps of (1) selecting a deposition substrate; (2) preparing an evaporation source; and (3) preparing the semiconductor alloy film. According to the method provided by the invention, the semiconductor alloy film with the large-scale continuously and gradually changing component is deposited under the same condition, and the method has the advantages of fast film making speed, convenience for process, easiness in implementation, stability and reliability and wide application range.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film materials, and in particular relates to a preparation method and application of a semiconductor alloy thin film with continuous gradient composition. Background technique [0002] Semiconductor alloy thin film materials have been developed rapidly and are widely used in photodetectors and solar cells. The main advantage of this kind of material (such as: antimony sulfur selenide, bismuth sulfur selenium, etc.) is that it has controllable optical band gap and electrical properties, and can match the spectral characteristics well. Such as antimony sulfur selenide alloy (Sb 2 (Se x S 1-x ) 3 ) combines the advantages of monomer materials and overcomes the shortage of band gap. It has a large absorption coefficient, and changing its composition can adjust the band gap from 1.1eV to 1.7eV. However, changes in the composition of semiconductor alloys have a huge impact on device perf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0272H01L31/0296H01L31/0216
CPCH01L31/0216H01L31/02167H01L31/02725H01L31/02963Y02E10/50
Inventor 宋海胜邓辉袁胜杰
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com