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A kind of preparation method of tin oxide-based thin film varistor

A varistor, tin oxide-based technology, applied in varistor cores, varistors, resistors, etc., can solve the problems of difficult deposition of tin oxide thin films and VFO grain boundary layers, and achieve operational methods Ease of use, controlled conditions, and the effect of mild heat soak conditions

Inactive Publication Date: 2019-10-01
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is extremely difficult to simultaneously deposit tin oxide films and VFO grain boundary layers by magnetron sputtering.

Method used

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  • A kind of preparation method of tin oxide-based thin film varistor
  • A kind of preparation method of tin oxide-based thin film varistor
  • A kind of preparation method of tin oxide-based thin film varistor

Examples

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Comparison scheme
Effect test

preparation example Construction

[0035] The preparation method of the tin oxide-based film varistor proposed by the present invention comprises the following steps and content:

[0036] (1) In radio frequency magnetron sputtering equipment, pure tin oxide sintered ceramics or one or more composite tin oxide sintered ceramics of metal Cu, Zn, Cr, Mn are used as matrix targets, and metal Cu, Zn, Cr One or more of Mn and its oxides are doped targets, which are respectively fixed to the corresponding target positions; the clean conductive substrate is fixed on the sample stage; the mechanical pump is turned on to a low vacuum of 0.1Pa , and then turn on the molecular pump until the system vacuum reaches 2×10 -4 Above Pa. Among them, the general formula of pure tin oxide sintered ceramics is SnO n , n is between 1.6-2.0; the substrate substrate is one of highly doped conductive silicon, zinc, copper, and platinum.

[0037] (2) Introduce high-purity argon, adjust the sputtering pressure and glow the pre-sputteri...

Embodiment 1

[0046] Example 1: Fix the Mn-doped tin oxide target and the clean highly doped conductive silicon wafer on the corresponding positions of the radio frequency magnetron sputtering equipment, close the chamber, first turn on the mechanical pump to a low vacuum of 0.1Pa, and then Turn on the molecular pump until the vacuum of the system reaches 2×10 -4 Above Pa. Introduce 99.99vol.% high-purity argon, adjust the sputtering pressure to 1.0Pa and start the glow, and perform 2min pre-sputtering; when the glow stabilizes, inject 99.99vol.% high-purity oxygen, control 2 The / Ar volume ratio is 1:1, and then the target shutter is opened to start depositing a thin film on the substrate. The sputtering process was carried out at ambient temperature, where the sputtering power was 80W, the sputtering pressure was 1.0Pa, and the sputtering time was 40min. Finally, a Mn-doped tin oxide-based thin film was deposited. Then, the prepared Mn-doped tin oxide-based film was embedded in analytic...

Embodiment 2

[0048] Example 2: the anoxic SnO 1.65 The target material and the clean highly doped conductive silicon wafer are respectively fixed on the corresponding positions of the radio frequency magnetron sputtering equipment, the chamber is closed, the mechanical pump is turned on to pump to a low vacuum of 0.1Pa, and then the molecular pump is turned on to pump to a system vacuum of 2 ×10 -4 Above Pa. Introduce 99.99vol.% high-purity argon, adjust the sputtering pressure to 1.0Pa and start the glow, and perform 10min pre-sputtering; when the glow stabilizes, inject 99.99vol.% high-purity oxygen, control O 2 / Ar volume ratio is 1:5, then open the target shutter and start to deposit thin film on the substrate. The sputtering process was carried out at ambient temperature, where the sputtering power was selected to be 180W, the sputtering pressure was 3.0Pa, and the sputtering time was 60min. Finally, an oxygen-deficient tin oxide film was deposited. Then, the prepared oxygen-defici...

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Abstract

The invention relates to a preparation method of a tin oxide-based thin film varistor, and belongs to the technical fields of electronic information material preparation and application thereof. According to the technology, sintered tin oxide ceramic is taken as a substrate target material and other metal or oxide is taken as a doped target material in radio frequency magnetron sputtering equipment; in an optimized sputtering process, deposition on a conductive substrate is performed to obtain a tin oxide-based thin film; next, the tin oxide-based thin film sample is embedded in varistor forming oxide powder to be subjected to hot dipping in a muffle furnace; and finally, electrodes are placed on the thin film surface and the substrate of the sample to obtain the tin oxide-based thin film varistor. The prepared tin oxide-based thin film varistor is excellent in nonlinear performance, controllable in varistor voltage and has wide application prospect in overvoltage protection of large-scale and super-large-scale integrated circuit; and in addition, the preparation method of the device disclosed in the invention is simple in operation and easy to implement and very suitable for large-scale production.

Description

technical field [0001] The invention relates to a preparation method of a tin oxide-based thin film piezoresistor, belonging to the technical field of electronic information material preparation and application thereof. Background technique [0002] Varistor is a semiconductor electronic device used to suppress surge power and instantaneous high voltage of transmission lines. Within a certain temperature and voltage range, the current passing through it increases sharply with the increase of the applied voltage, and it is widely used as a valve element for various surge suppression and electronic components for overvoltage protection. With the development of science and technology, in addition to the zinc oxide-based varistors that have been widely commercialized, ceramic-based varistors of various materials have appeared one after another, such as TiO 2 , SrTiO 3 、WO 3 and SnO 2 base varistor, etc. Among them, SnO 2 The microstructure of the base varistor is simple, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/00H01C17/12H01C7/108C23C14/35C23C14/08C23C14/58
Inventor 彭志坚王琪王杨符秀丽
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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