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Preparation method of Cu/Ag (Invar) composite material for electronic packaging

A composite material and electronic packaging technology, which is applied in metal material coating technology, transportation and packaging, metal processing equipment, etc., to meet performance requirements, reduce thermal expansion coefficient, and promote the development of related industries

Inactive Publication Date: 2017-11-03
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The material design and preparation method of the above-mentioned Cu / Ag(Invar) alloy composite material are all original creations of the patent of the present invention, and have not been published at home and abroad.

Method used

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  • Preparation method of Cu/Ag (Invar) composite material for electronic packaging
  • Preparation method of Cu/Ag (Invar) composite material for electronic packaging
  • Preparation method of Cu/Ag (Invar) composite material for electronic packaging

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Example 1: 40 wt% Cu / Ag(Invar) composite sintered at atmospheric pressure at 750°C

[0034] (1) Electroless silver plating on the surface of Invar alloy powder: the main salt in the electroless silver plating solution is AgNO 3 , the reducing agent is potassium sodium tartrate (KNaC 4 h 4 o 6 ), ammoniacal liquor is as complexing agent, and the step of chemical plating Ag is:

[0035] (1) Weigh 33.5 g of AgNO 3 , dissolved in 500 mL deionized water to prepare 67 g / L colorless, clear and transparent AgNO 3 solution;

[0036] (2) Add complexing agent ammonia water dropwise to the above solution, and the reaction begins to produce dark brown Ag 2 O precipitation, continue to drop complexing agent ammoniacal liquor, precipitation disappears gradually, till forming colorless transparent solution;

[0037] (3) In the colorless transparent solution described in step (2), add dropwise the NaOH aqueous solution of 10 g / L, regulate the pH value of solution to 11.5, obtain ...

Embodiment 2

[0045] Example 2: 40 wt% Cu / Ag(Invar) composite sintered at atmospheric pressure at 775°C

[0046] The preparation process of this example is the same as Example 1, the difference is that the normal pressure sintering temperature in step (5) is 775 °C, other processes and parameters remain unchanged, 40 wt% Cu / Ag(Invar ) Microstructure (a) and fracture morphology (b) of the composite material as image 3 shown.

[0047] Such as figure 1 As shown, the Ag layer on the surface of the Ag(Invar) composite powder particles prepared by electroless plating in a silver ammonia solution with a pH of 11.5 for 30 min is uniform and continuous, has a compact structure, and is tightly combined with the Invar alloy substrate, with a thickness of 2-3 μm . Such as figure 2 , as shown in 3, the Ag(Invar) in the 40 wt% Cu / Ag(Invar) alloy composite sintered at atmospheric pressure is uniformly distributed in the Cu alloy matrix in a network shape, without agglomeration, and most of the pores...

Embodiment 3

[0048] Example 3: Deformation heat treatment of 40 wt% Cu / Ag(Invar) composite sintered at atmospheric pressure at 775°C

[0049] For the 775°C atmospheric pressure sintered 40 wt% Cu / Ag(Invar) composite material prepared in Example 2, the deformation heat treatment was carried out: the sintered Cu / Ag(Invar) composite material sample was subjected to multiple passes by using a twin-roll cold rolling process The first rolling, the rolling force is 500kN, the deformation of each pass is less than 5%, when the thickness of the sample is reduced to 40%, the intermediate annealing is carried out at 600 ℃, and the temperature is kept for 1h, and the final annealing is carried out when the thickness of the sample is reduced to 55%. The temperature was 400 °C, and the temperature was kept for 2 h. The annealing rate of the Cu / Ag(Invar) alloy composite was set at 5 °C / min. After the heat preservation was completed, the composite material was cooled to room temperature with the furnace. ...

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Abstract

The invention relates to a preparation method of a Cu / Ag (Invar) composite material for electronic packaging. A chemical plating solution system of which a main salt is AgNO3 and a reducing agent is KNaC4H4O6 is used for chemically plating Ag on Invar powder of which the average particle size is 25 to 50 mum so as to prepare chemical plating Ag (Invar) composite powder, the Ag (Invar) composite powder and Cu powder of which the average particle size is 25 to 50 mum are used as raw materials and are mixed according to the component Cu of 30 to 50wt%, then zinc stearate of which the overall weight is 0.5wt% of the raw material powder is added as a lubricating agent, the raw materials are mixed by a double-shaft roller, are pressed in one direction under 300 to 600 MPa, are protected in a high-purity H2 atmosphere, are insulated for 1 to 3 h at 650 to 800 DEG C and are sintered under normal pressure so as to prepare the Cu / Ag (Invar) composite material, and a multi-pass cold rolling and annealing thermomechanical treatment process is adopted to realize the near-complete densification of the composite material. The prepared 40wt% Cu / Ag (Invar) composite material has excellent overall performance and can be used as a high-performance electronic packaging heat sink material, the density can reach 99%, the hardness is HV256, the coefficient of thermal expansion is 11.2*10<-6>K<-1>, and the heat conductivity is 53.7 W.(m.K)<-1>.

Description

technical field [0001] The invention relates to a method for preparing a metal matrix composite material, in particular to a method for preparing a Cu / Ag (Invar) composite material, and belongs to the field of new materials and its preparation technology. Background technique [0002] Cu / Invar alloy composite material combines the high electrical conductivity and thermal conductivity of Cu and the zero expansion characteristics of Invar alloy. Performance demands of high heat dissipation, low coefficient of thermal expansion mismatch with semiconductor and ceramic substrates, and high reliability. However, the development and utilization of this metal matrix composite needs to be solved: 1) During the sintering preparation process, atomic diffusion at the Cu / Invar interface is prone to occur, which leads to changes in the composition of Cu and Invar alloy in the composite material, which leads to the poor electrical and thermal conductivity of Cu and the poor performance of ...

Claims

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Application Information

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IPC IPC(8): C22C1/04C22C9/00C22C30/02B22F1/02C23C18/44
CPCC22C1/04C22C1/0425C22C9/00C22C30/02C23C18/44B22F1/17
Inventor 汤文明张昕吴玉程
Owner HEFEI UNIV OF TECH
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