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B and N co-doped three-dimensional graphene block and preparation method and application thereof

A graphene and co-doping technology, applied in the field of material science, can solve the problems of difficult stable existence of doping atoms and difficult boron doping, and achieve the effects of excellent lithium-sulfur battery performance, high specific surface area, and broad application prospects

Active Publication Date: 2017-11-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature of the CVD method is mostly higher than 850°C, making it difficult for the dopant atoms to exist stably
In addition, boron doping has always been a difficult point, and previous reports can only be achieved through BBr 3 Inflammable and explosive substances such as boron sources are used to achieve boron doping

Method used

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  • B and N co-doped three-dimensional graphene block and preparation method and application thereof
  • B and N co-doped three-dimensional graphene block and preparation method and application thereof
  • B and N co-doped three-dimensional graphene block and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0053] (1) A certain amount of agar (2g), boron oxide (1g), nickel chloride (1g) and urea (1g) were mixed and heated to 85°C, stirred and dissolved in 50mL aqueous solution, cooled and formed to obtain a uniform three-dimensional gel ( The freeze-drying temperature is minus 78°C and the time is 24 hours); it should be noted that the concentration of the precursor is the key factor for the formation of the three-dimensional structure. Too high or too low concentration is not conducive to the formation of three-dimensional structure, and an appropriate concentration is required;

[0054] (2) Freeze-dry the obtained three-dimensional gel (the freeze-drying temperature is minus 78°C for 24 hours), and the vacuum degree is less than 2Pa;

[0055] (3) The obtained three-dimensional block is used as a carbon source (5 sccm) by chemical vapor deposition method, and 10°C / min is heated to 700°C to directly grow graphene for 60 minutes (whether the protective gas is also included in the ...

Embodiment 2

[0059] (1) A certain amount of agar (2g), boron oxide (1g), nickel acetylacetonate (1g) and dicyandiamide (1g) were mixed and heated to 85°C, stirred and dissolved in 50mL aqueous solution, cooled and formed to obtain a uniform three-dimensional gel Glue (freeze-dried at minus 78°C for 24 hours); it should be noted that the concentration of the precursor is the key factor for the formation of the three-dimensional structure. Too high or too low a concentration is not conducive to the formation of a three-dimensional structure, and an appropriate concentration is required;

[0060] (2) Freeze-dry the obtained three-dimensional gel (the freeze-drying temperature is minus 78°C for 24 hours), and the vacuum degree is less than 2Pa;

[0061] (3) The obtained three-dimensional block is passed through a chemical vapor deposition method, ethylene is used as a carbon source (5 sccm), and the temperature is raised to 800 ° C at 10 ° C / min to directly grow graphene for 60 minutes (whet...

Embodiment 3

[0065] (1) A certain amount of agar (1g), gelatin (1g), boron oxide (1g), nickel chloride (1g) and urea (1g) was mixed and heated to 85°C, stirred and dissolved in 50mL aqueous solution, and cooled to form a uniform 3D gel; it should be noted that the concentration of the precursor is the key factor for the formation of the 3D structure. Too high or too low concentration is not conducive to the formation of three-dimensional structure, and an appropriate concentration is required;

[0066] (2) Freeze-dry the obtained three-dimensional gel (the freeze-drying temperature is minus 78°C for 24 hours), and the vacuum degree is less than 2Pa;

[0067] (3) The obtained three-dimensional block is passed through a chemical vapor deposition method, ethylene is used as a carbon source (5 sccm), and the temperature is raised to 800 ° C at 10 ° C / min to directly grow graphene for 60 minutes (whether a protective gas is also included in the chemical vapor deposition process, For example,...

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Abstract

The invention relates to a B and N co-doped three-dimensional graphene block and a preparation method and application thereof. The method comprises the following steps of mixing a biomass material, boron oxide, a nitrogen precursor, a metal catalyst precursor and a solvent, and performing heating dissolution under 80-100 DEG C to obtain a precursor solution, wherein the mass ratio of the biomass material, the boron oxide, the nitrogen precursor and the metal catalyst precursor is 1:(0.5-2):(0-2):(0.5-2), and the solvent is water or a mixed solution of the water and alcohol; cooling and forming the precursor solution to obtain three-dimensional gel; and freezing and drying the obtained three-dimensional gel, growing graphene by a chemical vapor deposition method, placing the product in an etching liquid, and performing drying to obtain the B and N co-doped three-dimensional graphene block.

Description

technical field [0001] The invention relates to a method and application of boron and nitrogen co-doped three-dimensional graphene blocks, belonging to the field of material science and technology. Background technique [0002] With the increasingly prominent energy and environmental issues, especially the rapid development of electric vehicles, traditional lithium-ion batteries have been unable to meet market demand, and it is urgent to find a new high-energy battery system. The lithium-sulfur battery is a battery system with sulfur as the positive electrode and metal lithium as the negative electrode. It has the advantages of high energy density, low cost, and low pollution. It is considered to be one of the next-generation energy storage systems with great potential. However, due to the electrons of sulfur, the poor ion conductivity, the large volume change during charge and discharge, the solubility of charge-discharge intermediate products and the accompanying "shuttle ...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/587H01M4/62H01M10/0525
CPCH01M4/364H01M4/587H01M4/624H01M4/628H01M10/0525Y02E60/10
Inventor 黄富强徐吉健
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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