Method for transferring graphene by using rosin resin as well as preparation method and application of transparent conductive graphene film

A transparent conductive film, rosin resin technology, applied in graphene, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as hindering application, graphene damage, and difficulty in dissolving, and achieve high cleanliness. Transfer, improve Support strength, good for large area effect

Active Publication Date: 2017-11-21
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing roll-to-roll (Roll to Roll), mechanical peeling and other transfer processes are prone to damage to graphene, which seriously affects the performance of graphene after transfer.
The method of using transfer media can reduce this damage, but the transfer media currently used are usually polymer resins such as polymethyl methacrylate (PMMA) and polydimethylsiloxane (PDMS), and the interaction

Method used

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  • Method for transferring graphene by using rosin resin as well as preparation method and application of transparent conductive graphene film
  • Method for transferring graphene by using rosin resin as well as preparation method and application of transparent conductive graphene film
  • Method for transferring graphene by using rosin resin as well as preparation method and application of transparent conductive graphene film

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0038] Example 1

[0039] like figure 1 Shown, the method for rosin resin transfer graphene comprises the steps:

[0040] (1) First dissolve the natural rosin resin in absolute ethanol at a concentration of 1:1 (mass ratio), then spin-coat a layer of rosin with a thickness of 50 μm on the surface of single-layer graphene grown on Cu foil, and solidify at room temperature 2h, the rosin / graphene / metal foil composite was obtained.

[0041] (2) Etch the obtained rosin / graphene / Cu foil composite to remove the Cu foil by etching, move it to deionized water for repeated cleaning, and obtain the rosin / graphene composite.

[0042] (3) Transfer the rosin / graphene complex to the surface with SiO 2 Thin layer of Si sheet surface, heated at 40°C for 120min to remove graphene and SiO 2 Moisture between / Si makes them more tightly combined.

[0043] (4) Rosin / graphene / SiO 2 The / Si complex was sequentially washed with acetone and banana water to remove the rosin resin, and finally wash...

Example Embodiment

[0044] Example 2

[0045] The difference from Example 1 is that in this example, hydrogenated rosin is dissolved in ethyl lactate at a concentration of 1:5 (mass ratio), and coated on 5-layer graphene grown on Ni, and the thickness of rosin is 30nm , cured at 100°C for 40 minutes; the target substrate used was GaN, and placed at room temperature for 5 hours to remove the moisture between the graphene film and the GaN substrate, so that the combination of rosin / graphene and the GaN substrate was tighter, and the obtained graphene surface The resistance is 125ohm / sq.

Example Embodiment

[0046] Example 3

[0047] The difference from Example 1 is that in this example, the disproportionated rosin is dissolved in ethyl acetate at a concentration of 1:1 (mass ratio), and coated on the single-layer graphene grown on Cu, and the thickness of the rosin is 150 μm , cured at 180°C for 90min; the target substrate used was sapphire (Al 2 o 3 ), placed at room temperature for 1h to remove the moisture between the graphene film and the sapphire substrate, so that the combination of rosin / graphene and the sapphire substrate is more tightly, and the resulting graphene surface resistance is 550ohm / sq.

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Abstract

The invention relates to a method for transferring graphene by using rosin resin as well as a preparation method and application of a transparent conductive graphene film. The method mainly comprises the steps: (1) dissolving rosin resin into an organic solvent, then, coating the surface of graphene growing on a metal foil substrate, carrying out heating and curing to obtain a rosin/graphene/metal foil complex; (2) removing metal foil by using an etching method or separating rosin/graphene from the metal foil by using an electrochemical stripping method; (3) transferring a rosin/graphene complex to a target substrate, and removing water between graphene and the target substrate by heat treatment; and (4) removing rosin by cleaning to realize the transfer of graphene. By using the method, the surface of the transferred graphene is higher in cleanliness, meanwhile, the integrality and excellent photoelectric property of the graphene film can be favorably kept, and the transparent conductive graphene film can be prepared and is suitable for preparation of and application to devices such as solar batteries and organic light emitting diodes.

Description

Technical field: [0001] The invention relates to a method for transferring graphene with rosin resin and the preparation and application of graphene transparent conductive film, specifically, a method for transferring graphene grown on a metal substrate using rosin resin (Rosin) as a transfer medium, through layer-by-layer transfer Single-layer graphene or direct transfer of multi-layer graphene to prepare graphene transparent conductive film and its application. Background technique: [0002] Graphene has a unique structure and excellent light transmission, electrical conductivity, thermal conductivity, flexibility, etc. As a new generation of photoelectric film, it can be widely used in touch screens, solar cells, organic light-emitting diodes, sensors and other fields. At present, chemical vapor deposition (CVD) is the most effective method for preparing large-area graphene films, but graphene is usually grown on metal foil (copper, platinum, nickel, etc.) substrates, in ...

Claims

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Application Information

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IPC IPC(8): C01B32/194H01L51/56H01L51/48H01L51/44H01L51/52
CPCC01P2004/02C01P2004/03C01B2204/04C01B2204/22H10K71/60H10K30/82H10K50/805Y02E10/549
Inventor 杜金红张志坤张鼎冬马来鹏任文才成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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