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A micron line array photodetector and its preparation method

A photodetector, micro-wire technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of undetectable detectors, unfavorable practical applications, and easy to be affected by external disturbances.

Active Publication Date: 2019-04-16
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, a single one-dimensional micro-nano device has its inherent defects. For example, due to its small light-receiving area, it is very susceptible to external disturbances. Once the point light source is shaken and deviates from a single nanowire, the detector cannot detect the light. signal, which leads to a low fault tolerance rate of a single nanowire, which is not conducive to practical applications; secondly, the photogenerated carrier area of ​​a single device is limited, so the photocurrent intensity is greatly limited
The above two defects lead to the low sensitivity and photoresponse of a single one-dimensional micro-nano photodetector, which hinders its further development.

Method used

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  • A micron line array photodetector and its preparation method
  • A micron line array photodetector and its preparation method
  • A micron line array photodetector and its preparation method

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preparation example Construction

[0060] The present invention also provides a method for preparing a micron line array photodetector described in the above technical solution, comprising the following steps:

[0061] (1) Etching a silicon wafer with an insulating layer to obtain a patterned substrate with a plurality of parallel groove arrays;

[0062] (2) In the step (1), gallium nitride micro-wires are epitaxially grown on the inner side walls of the trenches, and a gallium nitride micro-wires are respectively grown on the two inner side walls of each trench to form an epitaxial structure on the substrate surface ;

[0063] (3) In the step (2), both ends of the gallium nitride microwires are covered with Schottky contact type metal electrodes to obtain a micrometer wire array photodetector.

[0064] The invention etches the silicon wafer with the insulating layer to obtain a patterned substrate with a plurality of parallel trench arrays. In the present invention, there is no special limitation on the sour...

Embodiment 1

[0076] The structure of the micron line array ultraviolet photodetector prepared in this embodiment is as follows: Figure 1~5 As shown, the optical micrograph of the micron line array photodetector in the present embodiment is as follows Figure 11 Shown: the substrate material 100 is a silicon wafer with a crystal orientation of , the silicon wafer is an intrinsic material, and the resistivity is as high as 10 4 Ω·cm; the insulating layer 103 covers the silicon surface and is a layer of SiO with a thickness of 300nm 2 , the width of the insulating layer is 5 microns; the width of the trench is 2 microns; the epitaxial structure 110 is epitaxial on the sidewall of the trench 102 of the high-resistance silicon substrate, and the epitaxial structure successively includes an aluminum nitride buffer layer 111 with a thickness of 30 nm and a gallium nitride epitaxial layer 112 with a thickness of 300nm, the AlN buffer layer 111 is stacked on the trench side 102 of the intrinsic s...

Embodiment 2

[0097] According to the method of embodiment 1, micron line array photodetectors are prepared, and the specific structure is as follows Figure 6-10 Shown: the substrate material 100 is a 2-inch intrinsic silicon wafer material with a crystal orientation of , and the resistivity is as high as 10 3 Ω·cm; the insulating layer 103 covers the silicon surface and is a layer of SiO with a thickness of 150nm 2 The epitaxial structure 110 is epitaxial on the sidewall of the high-resistance silicon substrate trench 102, and its epitaxial structure includes an aluminum nitride buffer layer 111 and a gallium nitride epitaxial layer 112 in sequence, and the AlN buffer layer 111 is stacked on the intrinsic On the groove side 102 of the silicon substrate, the gallium nitride epitaxial layer 112 is stacked on the aluminum nitride buffer layer 111; since the crystal orientation of the substrate is different from that of Embodiment 1, the cross-sectional shape of the groove will change from ...

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Abstract

The invention provides a micron line array photodetector and a preparation method thereof. The micron line array photodetector provided by the present invention includes a substrate, an epitaxial structure and an electrode structure; the substrate includes a silicon wafer with a plurality of grooves arranged on the surface; the grooves are distributed in a parallel array; An insulating layer is provided on the upper surface of the silicon wafer between them; the epitaxial structure includes gallium nitride micro-wires epitaxially grown on the inner side walls of the trenches, and a gallium nitride micro-wires are grown on the two inner side walls of each trench , the gallium nitride microwires are in the same direction as the grooves, and the gallium nitride microwires in the plurality of grooves form a parallel microwire array; the electrode structure includes a pair of electrodes covering both ends of the gallium nitride microwires Schottky contact type metal electrode. The micron line array light detector provided by the invention has higher sensitivity and response speed.

Description

technical field [0001] The invention relates to the technical field of photoelectric element preparation, in particular to a micron line array photodetector and a preparation method thereof. Background technique [0002] With the development of science and technology, detection technology is playing an increasingly important role in various fields. For example, in the military, light detection technology is used for missile early warning, optical communication, biochemical analysis, etc.; in civilian use, light detection technology is used in open flame detection, ozone monitoring, offshore oil monitoring, etc. Driven by the traction of military needs and the development of related technologies, the application of detection technology as a high-tech will be more extensive in the future and its status will be more important. With the rapid progress of research on third-generation semiconductor materials, people began to develop a new generation of semiconductor photodetector...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/108H01L31/18
CPCH01L31/035281H01L31/108H01L31/1852H01L31/1856Y02P70/50
Inventor 李述体郭德霄赵亮亮宋伟东
Owner SOUTH CHINA NORMAL UNIVERSITY
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