Preparation method of silver nanoparticle dense layer on silicon wafer
A technology of silver nanoparticles and dense layer, applied in the field of nanomaterial preparation, can solve the problems of particle agglomeration, uneven distribution, sparse distribution of silver nanoparticles, etc., and achieves the effect of good repeatability and high enhancement effect.
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[0034] The preparation method of the dense layer of silver nanoparticles on the silicon chip that the present invention relates to comprises the following steps:
[0035] Step 1: Soak the silicon wafer in the alkali washing solution and the acid washing solution for 15 minutes each, so as to hydroxylate the surface of the silicon wafer;
[0036] Step 2: Place the silicon wafer obtained in Step 1 in a toluene solution of mercaptopropyltrimethoxysilane, and react at 40°C for 4-10 hours, or at room temperature for 24-40 hours, to silanize the silicon wafer;
[0037] Step 3: Soak the silicon wafer obtained in Step 2 in 0.25mM silver nitrate solution for 6-24 hours;
[0038] Step 4: Take out the silicon wafer obtained in Step 3, place it in a 5mM sodium borohydride solution, and react for 30 minutes;
[0039] Step 5: Take out the silicon chip obtained in Step 4, place it in a mixed solution of silver nitrate and polyvinylpyrrolidone, stir for 30 minutes, and then drop into 1ml, 0....
Embodiment 1
[0061] 1) Soak a silicon wafer cut to 1cm×1cm in 10ml of alkaline washing solution (ammonia: hydrogen peroxide: water = 1:1:5, volume ratio) for 15 minutes, then rinse with a large amount of deionized water, and ultrasonically clean for 2 minute;
[0062] 2) After that, soak the silicon wafer in 10ml pickling solution (hydrochloric acid: hydrogen peroxide: water = 1:1:5, volume ratio) for 15 minutes, then rinse with a large amount of deionized water and ultrasonically clean it for 2 minutes to Hydroxylation of silicon wafer surface;
[0063] 3) After the above-mentioned silicon wafer is blown dry with nitrogen, place it in 10ml of mercaptopropyltrimethoxysilane (MPTMS) toluene solution (5% volume concentration) at 40°C for 4 hours to silanize the silicon wafer;
[0064] 4) Take out the above-mentioned silicon chip, place it in toluene, toluene / ethanol mixture (volume ratio 1:1), ethanol, and deionized water for 2 minutes respectively;
[0065] 5) Soak the silicon wafers trea...
Embodiment 2
[0070] 1) Soak a silicon wafer cut to 1cm×1cm in 10ml of alkaline washing solution (ammonia: hydrogen peroxide: water = 1:1:5, volume ratio) for 15 minutes, then rinse with a large amount of deionized water, and ultrasonically clean for 2 minute;
[0071] 2) After that, soak the silicon wafer in 10ml pickling solution (hydrochloric acid: hydrogen peroxide: water = 1:1:5, volume ratio) for 15 minutes, then rinse with a large amount of deionized water and ultrasonically clean it for 2 minutes to Hydroxylation of silicon wafer surface;
[0072] 3) After the above-mentioned silicon wafer is blown dry with nitrogen, place it in 10ml of toluene solution (5% volume concentration) of mercaptopropyltrimethoxysilane (MPTMS) and keep it for 24 hours to silanize the silicon wafer;
[0073] 4) Take out the above-mentioned silicon chip, place it in toluene, toluene / ethanol mixture (volume ratio 1:1), ethanol, and deionized water for 2 minutes respectively;
[0074] 5) Soak the silicon waf...
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