Method for manufacturing terahertz quantum cascade laser metal waveguide structure and laser

Abstract

The invention discloses a method for manufacturing a terahertz quantum cascade laser (QCL) metal waveguide structure and a laser. The method comprises the following steps of: successively growing an etching stop layer, a lower contact layer, a multi-quantum well active region, an upper contact layer, an n-type heavily doped layer, and a low-temperature growth passivation layer on a semi-insulating GaAs substrate by using molecular beam epitaxy; forming non-alloy ohmic contact; successively depositing an electrical contact enhancing metal layer, a metal In layer and a metal Au layer on a receiver substrate; performing flip-chip bonding on a device substrate and the receiver substrate, depositing a SiO2 protective layer, applying photoresist, and baking the photoresist; stripping off the photoresist; removing the SiO2 protective layer; forming a Schottky diode to contact a upper electrode metal layer; forming a lower electrode metal layer; performing flip-chip bonding substrate cleavage and packaging. The method reduces contact resistance, avoids the large free carrier leakage of a terahertz photoelectric device caused by the diffusion of the uncontrolled doping distribution, and reduces a waveguide loss caused by a annealing process.

Description

technical field [0001] The invention belongs to the field of semiconductor compound photoelectric device preparation, and in particular relates to a preparation method of a terahertz quantum cascade laser metal waveguide structure and a laser. Background technique [0002] The terahertz radiation source is a key device for the application of terahertz technology, and the lack of portable high-power radiation sources working at room temperature has always been an important reason restricting the development of terahertz technology. Recent studies have shown that quantum cascade semiconductor lasers using resonant phonon structures, chirped superlattice structures, and transition structures from bound states to continuous states in the active region can cover the lasing wavelength from mid-infrared to terahertz (0.1- 10THz) band to produce a stable coherent terahertz radiation source. The laser has the advantages of small size, light weight, high conversion efficiency, and pow...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems described in the background technology, and to provide a method for preparing a terahertz quantum cascade laser with a bimetallic waveguide structure and a laser to solve the large waveguide loss of the terahertz quantum cascade laser in the prior art , the problem of poor heat dissipation

Images