Organic field effect transistor-based ammonia gas sensor and preparation method therefor

Abstract

The invention belongs to the technical field of a sensor, and discloses an organic field effect transistor-based ammonia gas sensor and a preparation method therefor, and aims to solve the problem ofhigh cost of the existing organic field effect transistor-based ammonia gas sensor due to a large amount of consumed manpower and materials. The organic field effect transistor-based ammonia gas sensor comprises a substrate layer, a gate electrode, a dielectric layer and an organic semiconductor layer which are arranged from the bottom up in sequence; the upper end of the organic semiconductor layer is connected with a source electrode and a drain electrode; the ammonia gas sensor is characterized in that the dielectric layer adopts the material of egg white protein; and the organic semiconductor layer is prepared from a soluble organic semiconductor material with 5-15mass% of egg white protein.

Description

technical field

[0001] The invention belongs to the technical field of sensors, and in particular relates to an organic field effect tube ammonia sensor based on a biodielectric layer and a biomaterial-doped organic layer and a preparation method thereof. Background technique

[0002] Today, with the rapid development of industry, while enjoying the rapid changes brought by the development of science and technology, people have to start paying attention to the negative impact brought by the development of science and technology-environmental pollution. Among them, air pollution is closely related to people's lives. attention. In life, people directly or indirectly release a lot of harmful gases into the atmosphere, such as methane, nitrogen monoxide, nitrogen dioxide, ammonia, sulfur dioxide and hydrogen sulfide, etc., and sometimes even endanger life. Gas sensors based on FETs have become a research hotspot in the field of sensors, and their application to the detection of...

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