Silicon-based negative electrode material with multi-buffer structure, and preparation method thereof
A silicon-based negative electrode material and buffer structure technology, applied in the field of material processing, can solve the problems of low initial charge and discharge efficiency, unstable material performance, poor cycle life of composite materials, etc., to inhibit polymerization and peeling, improve electrochemical performance, The effect of good cycle performance
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example 1
[0031] Take 5g of 325 mesh sieve micron silicon and add it to a stainless steel ball mill jar, and ball mill it for 10 hours under an argon atmosphere to obtain nanometer silicon powder.
[0032] Add 34g of tetrabutyl titanate into 300mL of 80% ethanol solution, stir at 300r / min for 10min, then add 2.8g of nano-silica powder, disperse with 300W ultrasonic wave for 30min, put it into a spray dryer and spray dry it. The air inlet temperature is 250°C, and the air outlet temperature is 110°C to obtain titanium dioxide-coated silicon. Take 3.5g of titanium dioxide-coated silicon, add it to 150g of 1% sucrose / ethanol solution, disperse it with 300W ultrasonic wave for 20min, and turn to Put it into a rotary evaporator, evaporate to dryness at 80°C to obtain the precursor, put the precursor in a tube furnace, and raise the temperature to 400°C at a heating rate of 5°C / min under an argon atmosphere, and keep it warm for 2 hours. Raise the temperature to 700°C at a heating rate of 5°C...
example 2
[0034] Take 8g of 325 mesh sieve micron silicon and add it to a stainless steel ball milling tank, and ball mill it under an argon atmosphere for 11 hours to obtain nanometer silicon powder. Take 51g of tetrabutyl titanate and add it to 450mL of 80% ethanol solution, and stir at 350r / min for 12min. Then add 4.2g of nano-silica powder, disperse it with 300W ultrasonic wave for 35min, put it into a spray dryer and spray dry it. Add 280g of silicon into a 1% sucrose / ethanol solution, disperse it with a 300W ultrasonic wave for 25 minutes, then transfer it to a rotary evaporator, and evaporate it to dryness at 85°C to obtain a precursor, which is placed in a tube furnace In an argon atmosphere, the temperature was raised to 450°C at a heating rate of 8°C / min, the temperature was raised to 750°C at a heating rate of 8°C / min for 2 hours, and the temperature was raised to 750°C at a heating rate of 8°C / min. 4h, multi-buffered silicon-based anode material.
example 3
[0036]Take 10g of 325-mesh sieve micron silicon and add it to a stainless steel ball mill jar, and ball mill it under an argon atmosphere for 12 hours to obtain nano-silicon powder. Take 68g of tetrabutyl titanate and add it to 600mL of 80% ethanol solution, and stir at 400r / min for 15min. Then add 5.6g of nano-silica powder, disperse it with 300W ultrasonic wave for 40min, put it into a spray dryer and spray dry, control the inlet air temperature to 270°C, and the outlet air temperature to 120°C to obtain titanium dioxide-coated silicon, take 7.0g titanium dioxide-coated Cover silicon, add 300g mass fraction of 1% sucrose / ethanol solution, disperse with 300W ultrasonic wave for 30min, then transfer to rotary evaporator, and evaporate to dryness at 90°C to obtain precursor, which is placed in tube In the furnace, in an argon atmosphere, the temperature was raised to 500°C at a heating rate of 10°C / min, and then the temperature was raised to 800°C at a heating rate of 10°C / min f...
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