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Manufacturing method of copper zinc tin sulfur selenium semiconductor film and application

A copper-zinc-tin-sulfur-selenium and semiconductor technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of limited popularization and application, complicated procedures, etc., and achieves simple equipment and preparation process, high purity, Phase homogeneous effect

Inactive Publication Date: 2018-02-09
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solvothermal synthesis technology is usually used to prepare nano-powder, and then the powder material is prepared into a slurry, and the thin film is prepared on the substrate by spin coating, screen printing and other methods and then sintered. Not only the process is complicated, but also directly limits the The promotion and application of the technology

Method used

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  • Manufacturing method of copper zinc tin sulfur selenium semiconductor film and application
  • Manufacturing method of copper zinc tin sulfur selenium semiconductor film and application
  • Manufacturing method of copper zinc tin sulfur selenium semiconductor film and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Add 1.5mmol cupric chloride, 3mmol zinc chloride, 0.75mmol stannous chloride and 0.375mmol CTAB to 60ml ethanol solution in turn, stir until completely dissolved; then add 7.5mmol thiourea, stir until completely dissolved; finally add 7.5mmol of selenourea was magnetically stirred until completely dissolved to obtain a reaction precursor. Put the cleaned FTO glass into the polytetrafluoroethylene lining of the autoclave, and place it at an angle of 30° with the wall of the autoclave with the conductive side facing down. Transfer the prepared reaction precursor solution to the inner liner, and seal the kettle. Put the high-pressure reactor into a high-temperature blast drying oven, and react at 200°C for 24h. After the reaction was over, it was cooled naturally. The FTO glass deposited with the CZTSSe thin film was taken out, washed three times with absolute ethanol and deionized water respectively, and then vacuum-dried at 60° C. for 4 hours to obtain a CZTSSe semicon...

Embodiment 2

[0034] Add 1.5mmol cupric chloride, 3mmol zinc chloride, 0.75mmol stannous chloride and 0.375mmol CTAB in 60ml of ethanol solution successively, stir until completely dissolved by magnetic force; then add 12mmol thiourea, stir until completely dissolved by magnetic force; finally add 3mmol of selenium Urea was magnetically stirred until completely dissolved to obtain a reaction precursor. Put the cleaned FTO glass into the polytetrafluoroethylene lining of the autoclave, and place it at an angle of 35° with the wall of the vessel with the conductive side facing down. Transfer the prepared reaction precursor solution to the inner liner, and seal the kettle. Put the high-pressure reactor into a high-temperature blast drying oven, and react at 210°C for 22h. After the reaction was over, it was cooled naturally. The FTO glass deposited with the CZTSSe thin film was taken out, washed three times with absolute ethanol and deionized water respectively, and then vacuum-dried at 60° ...

Embodiment 3

[0036] Add 1.5mmol copper chloride, 3mmol zinc chloride, 0.75mmol stannous chloride and 0.375mmol CTAB to 60ml ethanol solution in turn, stir until completely dissolved; then add 3mmol thiourea, stir until completely dissolved; finally add 12mmol Selenourea was magnetically stirred until completely dissolved to obtain a reaction precursor. Put the cleaned FTO glass into the polytetrafluoroethylene lining of the autoclave, and place it at an angle of about 40° with the wall of the autoclave with the conductive side facing down. Transfer the prepared reaction precursor solution to the inner liner, and seal the kettle. Put the high-pressure reactor into a high-temperature blast drying oven, and react at 200°C for 24h. After the reaction was over, it was cooled naturally. The FTO glass deposited with the CZTSSe thin film was taken out, washed three times with absolute ethanol and deionized water respectively, and then vacuum-dried at 60° C. for 4 hours to obtain a CZTSSe semicon...

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Abstract

The invention discloses a manufacturing method of a copper zinc tin sulfur selenium semiconductor film and an application. A solvent thermal synthesis technology is adopted to directly manufacture a Cu2ZnSn(Sx, Se1-x)4 semiconductor films on an FTO glass substrate, and the method can be applied to an absorbed layer of a thin film solar cell and a counter electrode of a dye-sensitized cell. In theinvention, through adding different proportions of thiourea and selenourea in a reaction precursor solution, adjusting and control of a two-element proportion of sulfur and selenium in a CZTSSe film are realized so as to realize optical band gap adjusting of the film and make an optical band gap be close to an optimum band gap needed by a solar cell. Required equipment and a manufacturing technology are simple, cost is low, and a product with an uniform phase, a good crystal and a high purity can be directly acquired.

Description

technical field [0001] The invention relates to the field of semiconductor film preparation, in particular to a preparation method and application of a copper-zinc-tin-sulfur-selenide semiconductor film. Background technique [0002] The study of solar cells is of great significance to alleviate the energy crisis and improve the ecological environment. In the past few decades, thin-film solar cells based on cadmium antimonide and copper indium gallium selenide have been developed rapidly and have been commercialized. However, due to the toxicity of Cd and the rare metals of In, Ga, and Te, the industry of its photovoltaic devices has been constrained. In recent years, I-II-IV-VI compound semiconductor copper zinc tin sulfur selenide (Cu 2 ZnSn(S x ,Se 1-x ) 4 , referred to as CZTSSe) thin film is considered to be expected to replace copper indium gallium selenide (CuIn x Ga 1-x Se 2 , referred to as CIGS) thin films have attracted much attention in the field of new e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/032H01L31/18
CPCH01L31/02167H01L31/02168H01L31/0326H01L31/1876Y02E10/50Y02P70/50
Inventor 黄铓魏爱香刘俊肖志明招瑜
Owner GUANGDONG UNIV OF TECH
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