A kind of enhanced algan/gan high electron mobility transistor and its preparation method
A high electron mobility, enhanced technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as large turn-on voltage and reaction thickness fluctuations, and achieve a large process window, simple and controllable preparation process. good effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0027] A method for preparing an enhanced AlGaN / GaN high electron mobility transistor, comprising the following process steps:
[0028] (1) Preparation of the source-drain metal system: prepare the source-drain metal on the epitaxial structure, and grow the source-drain protection medium SiN;
[0029] (2) Preparation of grid foot dielectric groove structure: use photolithography process to form grid foot pattern on the surface of the epitaxial structure, and then use one of etching process and wet etching process to remove the medium of the grid foot part, so that the grid foot part Form a dielectric groove structure; if the prepared circuit is an enhanced and depleted integrated monolithic chip, the gate pin of the depleted die is also subjected to photolithography and etching processes, and the glue is removed after etching;
[0030] (3) Grooving: using plasma BCl 3 Digging the AlGaN barrier layer as a reaction gas, controlling the time of digging, so that the depth of the ...
Embodiment 1
[0041] Preparation of enhanced AlGaN / GaN high electron mobility transistors, the structure of which is:
[0042] The structure of the epitaxial material from bottom to top is roughly 600um of semi-insulating SiC single crystal substrate layer, 500nm of GaN high-resistance buffer layer, 20nm of GaN channel and 25nm of graded AlGaN barrier layer. Among them, the Al content of the barrier layer AlGaN gradually changes from 32.5% to 20% from bottom to top. Among them, the high Al content AlGaN near the barrier layer is 2nm, which ensures that when the bottommost AlGaN of the device exists, the device Schott The channel opening gate voltage after base preparation is a positive gate voltage. In addition, the Al content of the lowermost layer and the upper layer can be reduced more to ensure a larger difference in etching rate. The average change rate of Al content in the thickness direction is 0.5%nm, that is, the Al content per nanometer decreases by 0.5%.
[0043] Its preparatio...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More