a bi 9 ti 3 fe 5 o 27 Layered multiferroic epitaxial thin film and preparation method thereof

An epitaxial thin film, layered technology, applied in coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problems of complex chemical composition of multiferroic thin films, easy generation of impurity phases in the preparation process, complex chemical composition, etc. Achieve the effect of high repeatability, high phase purity and high crystal quality

Active Publication Date: 2020-01-17
江苏先进无机材料研究院
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Problems solved by technology

The chemical composition of this kind of multiferroic thin film materials is relatively complex, and most of them are prepared by wet chemical methods that are easy to control the film composition. Major and other issues
For Bi with m=8 9 Ti 3 Fe 5 o 27 As far as the material is concerned, there have been reports on its material structure and ceramic properties (D.J.Smith and J.L.Hutchison, Journal of Microscopy, 129, 285 (1983), M. Mazurek, E.Jartych, A.Lisinska-Czekaj, D.Czekaj , andD.Oleszak,Journal of Non-Crystalline Solids,356,1994(2010)), found that it has great development potential in multiferroic properties, but Bi 9 Ti 3 Fe 5 o 27 The chemical composition of multiferroic thin films is relatively complex, and impurity phases are likely to be generated during the preparation process. At present, there are no reports on the ferroelectric properties and magnetism of thin films, and thin films are the main channel for the final application of multiferroic materials. Electrical properties and magnetic properties of Bi 9 Ti 3 Fe 5 o 27 High-quality multiferroic thin films are an urgent problem to be solved at present, which is of great significance to the future application and promotion of this material

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  • a bi <sub>9</sub> ti <sub>3</sub> fe <sub>5</sub> o <sub>27</sub> Layered multiferroic epitaxial thin film and preparation method thereof
  • a bi <sub>9</sub> ti <sub>3</sub> fe <sub>5</sub> o <sub>27</sub> Layered multiferroic epitaxial thin film and preparation method thereof
  • a bi <sub>9</sub> ti <sub>3</sub> fe <sub>5</sub> o <sub>27</sub> Layered multiferroic epitaxial thin film and preparation method thereof

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[0035] The present invention relates to a Bi 9 Ti 3 Fe 5 o 27 Multiferroic epitaxial thin film and its preparation method. The method is to combine the five-layer octahedral group BiFeO 3 Insertion into a three-layer layered perovskite ferroelectric Bi 4 Ti 3 o 12 Formation of a novel eight-layer layered perovskite Bi 9 Ti 3 Fe 5 o 27 Multiferroic films. The present invention adopts Bi for the first time 9 Ti 3 Fe 5 o 27 The ceramic target is coated on a single crystal substrate by pulsed laser deposition. 2 In-situ annealing treatment in the atmosphere, and finally obtained Bi with excellent quality 9 Ti 3 Fe 5 o 27 Layered multiferroic epitaxial thin films. The method requires simple equipment and is compatible with microelectronic technology. Prepared Bi 9 Ti 3 Fe 5 o 27 The layered multiferroic thin film has high phase purity, good ferroelectric properties and considerable ferromagnetism. It is an excellent room temperature multiferroic thin film m...

Embodiment 1

[0061] (a) Bi 9 Ti 3 Fe 5 o 27 Target compression: to analyze pure bismuth oxide (Bi 2 o 3 ), titanium dioxide (TiO 2 ), iron oxide (Fe 2 o 3 ) as the main raw material; according to Bi 9 Ti 3 Fe 5 o 27 Weigh various raw materials that meet the stoichiometric ratio for configuration; in order to compensate for the volatilization of Bi element during the high-temperature preparation process, when weighing Bi 2 o 3 Excessive 8mol%; mix the powder raw materials, put them into an automatic mortar for full mixing and grind for more than 24 hours; put the mixed powder into a mold for pre-compression molding, the shape is cylindrical, the diameter is 2cm, and the thickness is 0.5cm; Cold isostatic pressing into Bi 9 Ti 3 Fe 5 o 27 Target material, load pressure 260MPa, pressure holding time 15min.

[0062] (b) Preparation and cleaning of the substrate: using (001) oriented strontium titanate (SrTiO 3 ) single crystal substrate as the growth substrate, and ultrasonic...

Embodiment 2

[0067] (a) Bi 9 Ti 3 Fe 5 o 27 Target compression: to analyze pure bismuth oxide (Bi 2 o 3 ), titanium dioxide (TiO 2 ), iron oxide (Fe 2 o 3 ) as the main raw material; according to Bi 9 Ti 3 Fe 5 o 27 Weigh various raw materials that meet the stoichiometric ratio for configuration; in order to compensate for the volatilization of Bi element during the high-temperature preparation process, when weighing Bi 2 o 3 Excessive 8mol%; mix the powder raw materials, put them into an automatic mortar for full mixing and grind for more than 24 hours; put the mixed powder into a mold for pre-compression molding, the shape is cylindrical, the diameter is 2cm, and the thickness is 0.5cm; Cold isostatic pressing into Bi 9 Ti 3 Fe 5 o 27 Target material, load pressure 260MPa, pressure holding time 15min.

[0068] (b) Preparation and cleaning of the substrate: using (001) oriented strontium titanate (SrTiO 3 ) single crystal substrate as the growth substrate, and ultrasonic...

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Abstract

The invention relates to a Bi9Ti3Fe5O27 laminated iron-rich epitaxial film and a preparation method thereof. The film is prepared through a pulsed laser deposition method, and the chemical constitution of the film is Bi9Ti3Fe5O27. The Bi9Ti3Fe5O27 laminated iron-rich epitaxial film has high phase purity, excellent ferroelectric properties and considerable ferromagnetism, is an excellent room temperature iron-rich film material and is quite beneficial for research and development and popularization of novel iron-rich films.

Description

technical field [0001] The invention belongs to the technical field of new material preparation and relates to a Bi 9 Ti 3 Fe 5 o 27 Layered multiferroic epitaxial thin film and its preparation method. Background technique [0002] Multiferroic materials can exhibit ferroelectricity and ferromagnetism at the same time, and there is a magnetoelectric coupling between them, so that the mutual regulation of electricity and magnetism can be realized (J.Wang and R.Ramesh, Science 299, 1719(2003); W . Eerenstein and J.F. Scott, Nature 442, 759 (2006);). Therefore, as a new multifunctional material, multiferroic materials have broad application prospects in spintronics and many other fields. Among them, the multiferroic thin film material is compatible with microelectronic technology, so that the multiferroic thin film can be widely used in the fields of microsensors and multi-state storage. For example, magnetic recording reads fast but writes slowly, and ferroelectric recor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/28C23C14/58
CPCC23C14/08C23C14/28C23C14/5806
Inventor 曹逊金平实孙光耀
Owner 江苏先进无机材料研究院
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