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Mono-crystalline gallium-doped back passivation solar cell and preparation method thereof

A solar cell and back passivation technology, applied in the field of solar cells, can solve the problems of solar cell efficiency reduction, reduction of minority carrier diffusion length, and reduction of minority carrier lifetime

Pending Publication Date: 2018-06-08
TAIZHOU LERRISOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The boron-oxygen complex is a deep-level recombination center, which will reduce the lifetime of minority carriers, thereby reducing the diffusion length of minority carriers, resulting in a decrease in the efficiency of solar cells

Method used

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  • Mono-crystalline gallium-doped back passivation solar cell and preparation method thereof
  • Mono-crystalline gallium-doped back passivation solar cell and preparation method thereof
  • Mono-crystalline gallium-doped back passivation solar cell and preparation method thereof

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preparation example Construction

[0042] A method for preparing a solar cell of the present invention comprises the following steps:

[0043] 1) Texturing and cleaning the surface of the gallium-doped silicon substrate;

[0044] 2) Prepare the emitter;

[0045] 3) Perform edge insulation treatment; the insulation treatment method is a wet etching method, and the wet etching method includes the use of HNO-containing 3 , HF mixed acidic solution or chemical etching method using alkaline solution containing potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, etc.

[0046] 4) Preparation of passivation anti-reflection film on the front side and preparation of passivation film on the back side;

[0047] 5) Perform local film opening on the back passivation film; the local film opening process of the passivation film can use chemical etching slurry to form local contact patterns, and can also use laser film opening method to form local contact patterns.

[0048] 6) patterning and forming an electr...

Embodiment 1

[0052] The first step is to carry out surface texturing on the monocrystalline gallium-doped silicon wafer; this gallium-doped silicon wafer has a side-to-side distance of 156.75mm, a square shape, does not contain boron in the silicon wafer, and contains gallium at a concentration of 2×10 16 atoms / cubic centimeter. In this regard, the monocrystalline gallium-doped silicon wafer is textured by using NaOH solution in a tank cleaning machine to form a pyramid structure on the surface. The temperature of the solution is 80°C, and the duration is 10 minutes. And after HF pickling, water washing, drying and other steps, the surface metal ions are removed.

[0053] The second step is to prepare the emitter. The preparation of the pn junction is completed in the tubular heating diffusion furnace tube, using N 2 Carry POCl 3 source. The diffusion peak temperature was 850°C, and the diffusion time was 110 minutes.

[0054] The third step is to carry out insulation treatment. The...

Embodiment 2

[0060] The first step is to perform surface texturing on the single-crystal gallium-doped silicon wafer; this gallium-doped silicon wafer has a distance between sides of 156.75 mm, a square shape, boron in the silicon wafer, and a boron concentration of 5×10 16 atoms / cubic centimeter, containing gallium at a concentration of 1×10 14 atoms / cubic centimeter. In this regard, the monocrystalline gallium-doped silicon wafer is textured by using NaOH solution in a tank cleaning machine to form a pyramid structure on the surface. The temperature of the solution is 80°C, and the duration is 10 minutes. And after HF pickling, water washing, drying and other steps, the surface metal ions are removed.

[0061] The second step is to prepare the emitter. The preparation of the pn junction is completed in the tubular heating diffusion furnace tube, using N 2 Carry POCl 3 source. The diffusion peak temperature was 850°C, and the diffusion time was 110 minutes.

[0062] The third step ...

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Abstract

The invention discloses a mono-crystalline gallium-doped back passivation solar cell and a preparation method thereof. The mono-crystalline gallium-doped back passivation solar cell comprises a mono-crystalline gallium-doped silicon substrate doped with gallium, an emitter and a back surface field on the mono-crystalline gallium-doped silicon substrate, a passivation and antireflection front antireflection film / passivation film arranged on the surface of the emitter, a back passivation film arranged on the back surface of the substrate, a front electrode arranged on the surface of the front antireflection film / passivation film and composed of a conductive material, and a back electrode arranged on the surface of the back passivation film and composed of a conductive material. The preparation method comprises the following steps: completing surface texturing on gallium-doped silicon; preparing an emitter; carrying out insulation treatment; preparing a front surface passivation / antireflection film and a back surface passivation film; carrying out local film opening on the back passivation film; and carrying out a metallization process.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a single-crystal gallium-doped back passivated solar cell and a preparation method thereof. Background technique [0002] At present, with the gradual depletion of fossil energy, solar cells are used more and more widely as a new energy alternative. A solar cell is a device that converts the sun's light energy into electrical energy. Solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to extract the carriers, which is beneficial to the effective use of electrical energy. [0003] Currently used p-type solar cell substrates are generally silicon wafers doped with boron. However, the efficiency of solar cells using monocrystalline silicon doped with boron as the substrate will be attenuated to a certain extent under sunlight. This attenuation is called light decay (LID). At present, the efficiency decay of the back passivated solar c...

Claims

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Application Information

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IPC IPC(8): H01L31/068H01L31/0288H01L31/18
CPCH01L31/0288H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 李华童洪波靳玉鹏朱海涛
Owner TAIZHOU LERRISOLAR TECH CO LTD
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