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A preparation method of transparent 4h-sic nanohole array

A nanohole array and 4h-sic technology, which is applied in the field of preparation of transparent 4H-SiC nanohole arrays, can solve the problems of inability to achieve fine control of SiC nanohole arrays, inability to obtain SiC nanoarrays, and inability to peel off.

Active Publication Date: 2020-01-31
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, there are few reports on SiC nanohole arrays, and it is impossible to achieve fine regulation of SiC nanohole arrays.
[0004] In addition, although there have been many reports on SiC nanoarrays, it is impossible to obtain SiC nanoarrays.
For example, SiC nanostructure arrays prepared by high-temperature pyrolysis or epitaxial growth method, on the one hand, do not prepare SiC nanohole arrays, on the other hand, because the nanoarrays are firmly bonded to the substrate, they cannot be peeled off.
However, the previously reported anodic oxidation method to prepare SiC nano-arrays can prepare SiC nano-hole arrays, but it has not achieved fine control of the nano-hole array structure, and it is difficult to achieve non-damage peeling.
These deficiencies have great obstacles to promoting its functional application and need to be solved urgently.

Method used

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  • A preparation method of transparent 4h-sic nanohole array
  • A preparation method of transparent 4h-sic nanohole array
  • A preparation method of transparent 4h-sic nanohole array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The initial raw material N-doped 4 H -SiC single wafer cut into 0.5×1.5 cm 2 (L×W) single crystal chips were ultrasonically cleaned in acetone, alcohol, and deionized water for 15 min at room temperature and normal pressure, and then cleaned in HF (40%):C2 h 5 OH (99%)=1:1 solution for 2 min to remove surface oxides.

[0040] Using HF(40%):C 2 h 5 OH(99%) :H 2 o 2 (30%) = 3:6:1 mixed solution is the electrolyte.

[0041] The small SiC chip is used as the anode, and the graphite sheet is used as the cathode. The anode and the cathode are placed in a polytetrafluoroethylene electrolytic cell in parallel, and the distance between the anode and the cathode is 2 cm.

[0042] The etching pulse voltage was 17 V, the period was 0.8 s (dwell time was 0.4 s), and the number of cycles was 600. In the last 30 s of the entire etching process, a constant voltage of 17 V was used to etch to make transparent 4 H -SiC nanohole arrays naturally fall off from the substrate.

[00...

Embodiment 2

[0046] The only difference from Embodiment 1 is that the number of cycles of etching pulses in this embodiment is 630, and the others are the same as Embodiment 1, which will not be repeated here.

[0047] Figure 7-9 The SEM images of different magnifications of the SiC nanohole array prepared in this example are respectively, showing that the nanopore structure is uniform, with a pore diameter of 31 nm, a wall thickness of 12.1 nm, and a depth of 7.3 μm.

Embodiment 3

[0049] The only difference from Embodiment 1 is that the number of cycles of etching pulses in this embodiment is 660, and the others are the same as Embodiment 1, which will not be repeated here.

[0050] Figure 10-11 The SEM images of different magnifications of the SiC nanohole array prepared in this example show that the nanopore structure is uniform, the pore diameter is 38 nm, the wall thickness is 10.2 nm, and the depth is 7.5 μm.

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Abstract

The invention discloses a preparation method of a transparent 4H-SiC nanopore array. The preparation method comprises the following specific steps that 1, a SiC single crystal wafer is sequentially cleaned in acetone, ethyl alcohol and deionized water and soaked in a solution with the ratio of HF to C2H5OH being 1:1, and surface oxide is removed; 2, an electrolyte solution is prepared according tothe ratio of HF to C2H5OH to H2O2 being 3:6:1; 3, parameters such as pulse voltage are set; 4, a 4H-SiC single crystal wafer is used as anode, a graphite flake is used as a cathode, and horizontal placement is carried out; 5, a power source is turned on, and electrochemical etching is carried out at indoor temperature and normal pressure; and 6, a prepared film is thoroughly washed with ethyl alcohol and deionized water in sequence, and preparation of the transparent 4H-SiC nanopore array is achieved. The prepared transparent 4H-SiC nanopore array is uniform in pore structure which is a single crystal structure. When separated from a base body, the film structure is complete and is hopeful to be used as a function unit to be applied in the field of photoelectric devices.

Description

technical field [0001] The present invention relates to a transparent 4H - A method for preparing SiC nanohole arrays, belonging to the technical field of material preparation. Background technique [0002] SiC is the third-generation semiconductor material developed after the first-generation (Si) and second-generation (GaAs) semiconductor materials. Compared with its traditional bulk materials, SiC low-dimensional nanostructures have excellent physical and chemical properties, such as wide bandgap, high critical electric field, high electron velocity, high thermal conductivity, high chemical stability, small dielectric constant and better It has unique and significant advantages when used as optoelectronic devices in harsh environments such as high temperature, high frequency, high power and radiation resistance. [0003] Considering the development and application of high-efficiency optoelectronic materials, the realization of arrayed nanostructures is very important. O...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25F3/12
CPCC25F3/12
Inventor 杨为佑赵连富陈善亮史新俊
Owner NINGBO UNIVERSITY OF TECHNOLOGY