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Porous perovskite film, carbon slurry and carbon electrode based solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of large amount of perovskite materials, rough and uneven surface, affecting battery performance, etc., and achieve easy large-scale application, high conversion efficiency, and improved utilization rate Effect

Active Publication Date: 2018-07-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention aims to solve the problem that the perovskite film preparation method in the prior art is prone to rough and uneven surface, many defects that affect the performance of the battery and the amount of perovskite material in the mesoscopic battery structure is too large, and proposes a new The battery structure based on the porous perovskite film and its realization method, the battery structure does not require the perovskite film to be dense and the surface is flat to obtain high performance, and the preparation method of the porous perovskite film is simple and reproducible High, the manufacturing method of the perovskite battery is simpler, does not require an independent hole transport layer, does not require expensive noble metal electrodes and high vacuum coating processes, and can complete the preparation of the entire battery at a temperature not higher than 120°C process, also suitable for fabricating bendable batteries on flexible substrates

Method used

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  • Porous perovskite film, carbon slurry and carbon electrode based solar cell
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  • Porous perovskite film, carbon slurry and carbon electrode based solar cell

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preparation example Construction

[0056] Next, a method for preparing the perovskite thin film will be described. The perovskite film of the present invention can be prepared by a solution method.

[0057]Preparation of perovskite precursor solution: Dissolve the halide of B and the monovalent cation salt of X (such as the organic amine salt of X) in a solvent with oxygen-containing groups at a certain ratio to form a perovskite precursor solution. The oxygen-containing group solvent can be a single solvent or a mixed solvent such as dimethylsulfoxide (DMSO), dimethylformamide (DMF), γ-butyrolactone (GBL), N-methyl-2-pyrrolidone, etc. solvent. By selecting different solvents, the porous morphology of the obtained perovskite film can be tuned. The molar ratio of the halide of B to the monovalent cation salt of X may be 1:10˜10:1, for example, 1:1. The mass ratio of the halide of B to the solvent may be 1:10˜10:1. In one example, the halide of B, the monovalent cation salt of X, and DMSO are in a molar ratio...

Embodiment 1

[0087] (1) Cleaning of the conductive substrate. Use acetone, alkaline detergent, deionized water, and acetone to ultrasonically clean the FTO glass for 10 minutes, and finally dry it with compressed air, and finally place it in a UV ozone machine for 15 minutes to remove residual organic impurities and enhance the wetting of the substrate to the solution sex;

[0088] (2) Preparation of hole blocking layer. The precursor solution solvent is ethanol, which includes the following components: tetraisopropyl titanate (0.3mol / L), acetylacetone (0.45mol / L), hydrochloric acid (0.09mol / L), water (1.8mol / L). Take the precursor solution, drop it on the FTO in step (1), make the solution cover the entire FTO surface, spin coating at a speed of 3000rpm for 20s, and then dry at 120°C for 30min;

[0089] (3) Preparation of mesoporous electron transport layer. With 20wt% nano-TiO 2 The slurry is used as the material, and the mesoporous TiO is coated on the hole blocking layer by the scr...

Embodiment 2

[0094] (1) Cleaning of the conductive substrate. With embodiment 1;

[0095] (2) Preparation of hole blocking layer. With embodiment 1;

[0096] (3) Preparation of mesoporous electron transport layer. With embodiment 1;

[0097] (4) Preparation of porous perovskite layer. 1.383g of PbI 2 , 0.477g of MAI and 212.7μL of DMSO were dissolved in 1.9047mL of DMF at a molar ratio of 1:1:1 and stirred thoroughly, and perovskite was added dropwise on the substrate of FTO / hole blocking layer / mesoporous layer. The precursor solution was spin-coated at a speed of 5000rpm for 20s, and then 0.5mL of n-hexane was added dropwise at a rate of 0.25mL / s at 6 seconds to obtain a perovskite precursor film. Then annealed on a hot plate at 100°C for 10 minutes to obtain a dense perovskite film with a porous upper and lower layers, such as Figure 5 shown;

[0098] (5) Preparation of carbon counter electrode layer. With embodiment 1;

[0099] (6) Leading out the transparent conductive elect...

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Abstract

The invention relates to a porous perovskite film, carbon slurry and a carbon electrode based solar cell. The chemical formula of the perovskite film is ABX3, wherein A is at least one monovalent cation, and is preferably at least one or a mixed ion of CH3NH3<+>, NH2-CH=NH2<+>, Cs<+>, Li<+>, C4H9NH3<+>, CH6N3<+>, Na<+> and K<+>, B is at least one of PB<2+>, Sn<2+>, Ge<2+>, Co<2+>, Fe<2+>, Mn<2+>,Cu<2+> and Ni<2+>, and X is at least one of Cl<->, Br<->, I<->, SCN<-> and BF4<->. The perovskite film is of a porous structure.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell thin film and a preparation method thereof, more specifically, to a shape-controllable perovskite thin film, a corresponding perovskite solar cell and a preparation method thereof. Background technique [0002] With the development of human society, the demand for energy is increasing day by day. As a clean and non-polluting energy source, solar energy has received extensive attention and in-depth research at home and abroad. Solar cells based on perovskite thin films are a new type of solar cells developed in recent years, and their advantages are very prominent: 1. The preparation process of organic-inorganic hybrid perovskite materials is simple and the cost is low; 2. It has a relatively suitable band Gap width (1.5-2.3eV), large light absorption range; 3, charge diffusion length up to micron level, long charge lifetime, etc. 4. It can be made i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48H01B1/24
CPCH01B1/24H10K71/12H10K85/60H10K30/151H10K30/81Y02E10/549
Inventor 杨松旺
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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