Preparation method of silicon-based battery panel deposition cadmium telluride film lamination solar battery materials
A solar cell and cadmium telluride-based technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of solar cell materials that are prone to cracks and affect power generation efficiency, and improve photovoltaic conversion efficiency and photoelectric conversion efficiency. Improve and solve the effect of cracking and corrosion problems
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0060] (1) The ordinary Si-based solar cell substrate was ultrasonically cleaned with ionized water for 5 minutes, then dried and sent to the magnetron sputtering reaction chamber, at 1.0×10 -3 Under the condition of Pa vacuum, the AZO transparent conductive electrode was prepared by depositing on the back of the battery substrate. The process parameter conditions are: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of zinc oxide-doped aluminum target for reactive sputtering is 99.9%, the preparation temperature is 100°C, and the preparation time is 30 minutes.
[0061] (2) Continue to prepare TiAlN anti-corrosion protective coating in the magnetron sputtering preparation. The process parameter conditions are: nitrogen is used as the gas reaction source, the flow rate of nitrogen gas is 30 sccm, the purity of reactive sputtering titanium nitride target and aluminum target is 99.99%, the preparation temperature...
Embodiment 2
[0066] (1) The ordinary Si-based solar cell substrate was ultrasonically cleaned with ionized water for 5 minutes, then dried and sent to the magnetron sputtering reaction chamber, at 1.0×10 -3 Under the condition of Pa vacuum, the AZO transparent conductive electrode was prepared by depositing on the back of the battery substrate. The process parameter conditions are: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of zinc oxide doped aluminum target for reactive sputtering is 99.9%, the preparation temperature is 150°C, and the preparation time is 30 minutes.
[0067] (2) Continue to prepare TiAlN anti-corrosion protective coating in the magnetron sputtering preparation. The process parameter conditions are: nitrogen is used as the gas reaction source, the nitrogen flow rate is 50 sccm, the purity of the reactive sputtering titanium nitride target and aluminum target is 99.99%, the preparation temperature is...
Embodiment 3
[0072] (1) The ordinary Si-based solar cell substrate was ultrasonically cleaned with ionized water for 5 minutes, then dried and sent to the magnetron sputtering reaction chamber, at 1.0×10 -3 Under the condition of Pa vacuum, the AZO transparent conductive electrode was prepared by depositing on the back of the battery substrate. The process parameter conditions are: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of zinc oxide-doped aluminum target for reactive sputtering is 99.9%, the preparation temperature is 200°C, and the preparation time is 30 minutes.
[0073] (2) Continue to prepare TiAlN anti-corrosion protective coating in the magnetron sputtering preparation. The process parameter conditions are as follows: nitrogen is used as the gas reaction source, the nitrogen flow rate is 70 sccm, the purity of the reactive sputtering titanium nitride target and aluminum target is 99.99%, the preparation tem...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


