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Additive-doped perovskite film and preparation method and application thereof

An additive and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of not being able to inhibit the movement of iodine ions, and not being able to prevent the aging of perovskite materials, so as to promote industrial production, Improved long-term stability and extended service life

Inactive Publication Date: 2018-07-24
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing additives cannot inhibit the movement of iodide ions and cannot prevent the aging of perovskite materials.

Method used

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  • Additive-doped perovskite film and preparation method and application thereof
  • Additive-doped perovskite film and preparation method and application thereof
  • Additive-doped perovskite film and preparation method and application thereof

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preparation example Construction

[0049] Since during the preparation of perovskite thin films, iodine vacancies will be generated locally, and the existence of iodine vacancies will promote the migration of iodine ions in perovskite. Therefore, the introduction of additives to promote the uniform distribution of iodine can effectively reduce iodine vacancies. Generally, metal halides with smaller radius, such as potassium iodide, can effectively reduce the concentration of iodine vacancies in perovskite. Therefore, the use of the additives disclosed in the present invention can inhibit iodide ion migration, thereby improving the long-term stability of perovskite cells.

[0050] In the above embodiments, the additive MG is incorporated into the perovskite film by solution mixing, co-evaporation, anti-solvent or lamination.

[0051] The present invention also discloses a method for preparing the additive-doped perovskite film as described above, comprising the following steps:

[0052] Step S11, preparing a pe...

example 1

[0078] Example 1, a method for preparing a perovskite solar cell.

[0079] Please refer to the attached figure 2 The schematic diagram of the internal structure of the perovskite solar cell shown includes the following steps:

[0080] (1) Clean a 5×5cm ITO glass plate with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0081] (2) Preparation of NiO thin film as electron transport layer;

[0082] (3) Preparation of doped or modified metal halide precursor: 461 mg of PbI 2 (1mmol), 19.05mg cuprous iodide CuI (0.1mmol) were dissolved in 1mL DMF solution, heated and stirred at 60°C for 2h, added 20uL chlorobenzene, mixed completely and set aside;

[0083] (4) Preparation of doped PbI by slot coating using the prepared precursor solution 2 film;

[0084] (5) Place the prepared metal halide film in the film forming cavity, and use a vacuum pump to control the air pressure at 1...

Embodiment 2

[0089] (1) Clean a 10×10cm FTO glass plate with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0090] (2) Preparation of CuSCN film as a hole transport layer;

[0091] (3) Preparation of perovskite solution with additives: 461 mg of PbI 2 (1mmol), 159mg of MAI (1mmol) were dissolved in 1mL of DMF solution, 68uL of anhydrous DMSO was added, and 36.9mg of cuprous bromide CuBr was added as an additive, heated and stirred at 70°C for 2h, mixed completely before use;

[0092] (4) Use the doped perovskite solution to prepare the perovskite film doped with stabilizer by slit coating, and anneal at 60~150°C for 10~120min, with a thickness of 200~600nm;

[0093] (5) Re-deposit the electron transport layer ZnO on the substrate, with a thickness of 20~50nm;

[0094] (6) Evaporate metal conductive layer Au electrodes to prepare perovskite solar cells.

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Abstract

The invention relates to an additive-doped perovskite film. The perovskite film is doped with an additive which is a stabilizer formed by metal ions M and halogen ions G. The invention also disclosesa preparation method and application of the additive-doped perovskite film. By incorporating an appropriate amount of additive during the preparation process of the perovskite film, the additive suppresses the movement of iodide ions in the perovskite film material, thereby stabilizing the material itself. Thus, a prepared perovskite battery is improved in long-term stability, performance, and service life, and industrial production is also promoted.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a perovskite thin film doped with additives and a preparation method and application thereof. Background technique [0002] A solar cell is a photoelectric conversion device that uses the photovoltaic effect of semiconductors to convert solar energy into electrical energy. So far, solar power has become the most important renewable energy besides hydropower and wind power. The semiconductors currently used for commercialization include monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, copper indium gallium selenide, etc., but most of them consume a lot of energy and cost. [0003] In recent years, a perovskite solar cell that uses organometallic halides as the light absorbing layer has received much attention. The perovskite molecule is ABX 3 type of cubo-octahedral structure, such as figure 1 shown. The thin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46
CPCH10K71/12H10K85/30H10K30/50H10K71/30H10K85/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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