A method for rapidly preparing metal oxide thin films with high flatness
A technology of oxide thin film and flatness, applied in metal material coating process, liquid chemical plating, device for coating liquid on the surface, etc., can solve the waste of precursor liquid, take a long time, increase the cost of device preparation, etc. problems, to achieve the effect of improving preparation efficiency, reducing preparation cost, and shortening preparation time
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Embodiment 1
[0033] (1) Dissolve indium nitrate, gallium nitrate and zinc nitrate with a molar ratio of 72.5:7.5:20 in ultrapure water with a resistivity of 18.2 MΩ, stir at room temperature for 10 hours in the dark, and obtain a mixture aqueous solution with a concentration of 0.2 mol / L , using a syringe equipped with a hydrophobic polytetrafluoroethylene filter head with a pore size of 0.22 μm to filter the aqueous solution of the mixture to obtain a filtered aqueous solution of the mixture.
[0034] (2) The thermally grown silicon dioxide insulating substrate with a thickness of 300 nm was ultrasonically cleaned with ultrapure water, acetone, and isopropanol for 20 minutes, and then dried with ultrapure argon gas with a purity of 99.999%, and a radio frequency power of 40W was used. Oxygen plasma was treated for 5 minutes, then placed on a hot stage, heated to 70°C, and kept at the temperature for later use.
[0035] (3) Dip the filtered mixture aqueous solution obtained in step (1) wit...
Embodiment 2
[0037] (1) Dissolve indium nitrate, gallium nitrate and zinc nitrate with a molar ratio of 72.5:7.5:20 in ultrapure water with a resistivity of 18.2 MΩ, stir at room temperature for 10 hours in the dark, and obtain a mixture aqueous solution with a concentration of 0.2 mol / L , using a syringe equipped with a hydrophobic polytetrafluoroethylene filter head with a pore size of 0.22 μm to filter the aqueous solution of the mixture to obtain a filtered aqueous solution of the mixture.
[0038] (2) The thermally grown silicon dioxide insulating substrate with a thickness of 300 nm was ultrasonically cleaned with ultrapure water, acetone, and isopropanol for 20 minutes, and then dried with ultrapure argon gas with a purity of 99.999%, and a radio frequency power of 40W was used. Oxygen plasma was treated for 5 minutes, then placed on a hot stage, heated to 80°C, and kept at the temperature for later use.
[0039] (3) Dip the filtered mixture aqueous solution obtained in step (1) wit...
Embodiment 3
[0041] (1) Dissolve indium nitrate, gallium nitrate and zinc nitrate with a molar ratio of 72.5:7.5:20 in ultrapure water with a resistivity of 18.2 MΩ, stir at room temperature for 10 hours in the dark, and obtain a mixture aqueous solution with a concentration of 0.2 mol / L , using a syringe equipped with a hydrophobic polytetrafluoroethylene filter head with a pore size of 0.22 μm to filter the aqueous solution of the mixture to obtain a filtered aqueous solution of the mixture.
[0042] (2) The thermally grown silicon dioxide insulating substrate with a thickness of 300 nm was ultrasonically cleaned with ultrapure water, acetone, and isopropanol for 20 minutes, and then dried with ultrapure argon gas with a purity of 99.999%, and a radio frequency power of 40W was used. Oxygen plasma was treated for 5 minutes, then placed on a hot stage, heated to 70°C, and kept at the temperature for later use.
[0043] (3) Dip the filtered mixture aqueous solution obtained in step (1) wit...
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