A low-temperature reactive sputtering deposition of nano-α-al 2 o 3 coating method
A technology of sputtering deposition and low-temperature reaction, which is applied in coating, sputtering coating, metal material coating process, etc., can solve the problems of coating deposition and film cracking, and achieve low deposition temperature, low cutting heat, Effective control of thermal stress
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Embodiment 1
[0031] (1) α-Al 2 O 3 15wt.% Al / α-Al 2 O 3 The composite material is cut into the target size required for RF magnetron sputtering, and installed in the corresponding target station in the RF magnetron sputtering system;
[0032] (2) Select Si(100) as the substrate, cut it into a size of 10×10mm, grind and polish the coating surface to a mirror surface, and place it in an anhydrous alcohol solution for ultrasonic cleaning for 15 minutes to remove oil, and place it on the sample table after drying. , adjust the distance between the target and the sample to 100mm;
[0033] (3) After pre-pumping the low vacuum to below 10Pa, turn on the vacuum heating and baking system, set the baking temperature at 120℃, and then pump to the background vacuum of 5×10 -4 Pa, charge Ar gas into the deposition chamber and adjust the throttle valve until the vacuum degree returns to 10~20Pa, after stabilizing for 10min, open the throttle valve, and then pump it to 5×10 -4 The background vacuum ...
Embodiment 2
[0039] (1) α-Al 2 O 3 20wt.% Al / α-Al 2 O 3 The composite material is cut into the target size required for RF magnetron sputtering, and installed in the corresponding target station of RF magnetron sputtering;
[0040] (2) Select W6Mo5Cr4V2 high-speed steel as the substrate, cut it into Φ10×5mm size, after conventional quenching + 560℃ (3 times) tempering, grind and polish the coating surface, and place it in anhydrous alcohol solution for ultrasonic cleaning for 15min Remove oil, place it on the sample table after drying, and adjust the distance between the target and the sample to be 100mm;
[0041] (3) After pre-pumping the low vacuum to below 10Pa, turn on the vacuum heating and baking system, set the baking temperature at 120℃, and then pump to the background vacuum of 5×10 -4 Pa, charge Ar gas into the deposition chamber and adjust the throttle valve until the vacuum degree returns to 10~20Pa, after stabilizing for 10min, open the throttle valve, and then pump it to ...
Embodiment 3
[0047] (1) α-Al 2 O 3 20wt.% Al / α-Al 2 O 3 The composite material is cut into the target size required for RF magnetron sputtering, and installed in the corresponding target station of RF magnetron sputtering;
[0048] (2) Select W6Mo5Cr4V2 high-speed steel as the substrate, cut it into Φ10×5mm size, after conventional quenching + 560℃ (3 times) tempering, grind and polish the coating surface, and place it in anhydrous alcohol solution for ultrasonic cleaning for 15min Remove oil, put it on the sample table after drying, and adjust the distance between the target and the sample to be 100mm;
[0049] (3) After pre-pumping the low vacuum to below 10Pa, turn on the vacuum heating and baking system, set the baking temperature at 120℃, and then pump to the background vacuum of 5×10 -4 Pa, charge Ar gas into the deposition chamber and adjust the throttle valve until the vacuum degree returns to 10~20Pa, after stabilizing for 10min, open the throttle valve, and then pump it to 5×...
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