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Benzocyclobutene-functionalized tetrakis(dimethylsiloxy)silane, its preparation method and its resin preparation method

A benzocyclobutene functional, dimethylsiloxy technology, applied in chemical instruments and methods, organic chemistry, silicon-organic compounds, etc., can solve the problems of low dielectric properties, difficult processing, poor film-forming properties, etc. , to achieve the effect of low dielectric properties, easy operation and moderate curing temperature

Active Publication Date: 2021-03-19
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional organosiloxane materials have poor film-forming performance and are not easy to process
However, the organosiloxane resins in the existing reports still cannot meet the needs of the growing microelectronics industry. The thermal stability and low dielectric properties of the existing organosiloxane resins need to be further improved.

Method used

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  • Benzocyclobutene-functionalized tetrakis(dimethylsiloxy)silane, its preparation method and its resin preparation method
  • Benzocyclobutene-functionalized tetrakis(dimethylsiloxy)silane, its preparation method and its resin preparation method
  • Benzocyclobutene-functionalized tetrakis(dimethylsiloxy)silane, its preparation method and its resin preparation method

Examples

Experimental program
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Effect test

preparation example Construction

[0026] Another aspect of the present invention provides a method for preparing a benzocyclobutyl functionalized tetra (dimethylsiloxy) silane. In an exemplary embodiment of the preparation method of the preparation method of the benzocybutylene functionalized four (dimethylsiloxy) silane of the present invention, the preparation method can include:

[0027] Step S01, synthesized 4-dimethylvinyl silica and cyclobutylene.

[0028] In this example, the method of synthesizing 4-dimethylvinyl silicide (referred to as 4-DMVSBCB) can include:

[0029] In step S0101, the magnesium strip is added to the reactor, and tetrahydrofuran and iodine particles are added to the reactor under an inert atmosphere condition. The mixed solution obtained in tetrahydrofuran was then added to the mixed solution obtained in tetrahydrofuran. The mixed solution was added dropwise to the magnesium strip and iodine particles at room temperature, and the mixed solution was slowly added dropwise to the mixed sol...

example 1

[0072] A, synthesis of 4-dimethylvinyl silicate cyclobutylene (referred to as 4-DMVSBCB).

[0073] The magnetic stirrer and 2.92 g of magnesium strip were added to the reactor, and the vacuum filled nitrogen gas was repeated 3 times (ensuring oxygen in the system), and 5 ml of tetrahydrofuran and 0.010 g of iodine-activated magnesium strip were added to the reactor under nitrogen protection. 20 g of 4-bromobenzene was taptene was diluted in 36 ml of tetrahydrofuran to give a mixed solution. The addition of the drip mixed solution with magnesium strips and iodine were exposed to the magnesium strip and iodine, and the mixed solution was slowly added dropwise, and the mixed solution was continued. After the dropwise addition, the system was transferred to a 65 ° C oil bath reaction for 1 h. Then, the temperature dropped at a nitrogen atmosphere to room temperature, and 14 g of dimethylacetin-based chlorosilane was removed from 30 ml of tetrahydrofuran to give a mixed liquid, and the...

example 2

[0084] A, synthesis of 4-dimethylvinyl silicate cyclobutylene (referred to as 4-DMVSBCB).

[0085] The magnetic stirrer and 3.10 g of magnesium strip were added to the reactor, and the vacuum filled nitrogen gas was repeated 3 times (ensuring oxygen in the system), and 6 ml of tetrahydrofuran and 0.010 g of iodine-activated magnesium strip were added to the reactor under nitrogen protection. 20 g of 4-bromobenzene was taptene was diluted in 36 ml of tetrahydrofuran to give a mixed solution. The addition of the drip mixed solution with magnesium strips and iodine were exposed to the magnesium strip and iodine, and the mixed solution was slowly added dropwise, and the mixed solution was continued. After the dropwise addition, the system was transferred to a 70 ° C oil bath reaction for 2 h. Then the temperature dropped temperature to room temperature in a nitrogen atmosphere, and was diluted in 30 ml of tetrahydrofuran to give a mixture in 30 ml of tetrahydrofuran, and the mixture w...

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Abstract

The invention provides a benzocyclobutene functionalized tetrakis (dimethylsiloxy)silane, a producing method thereof and a producing method of benzocyclobutene functionalized tetrakis (dimethylsiloxy)silane resin. The producing method of the benzocyclobutene functionalized tetrakis (dimethylsiloxy)silane includes synthesizing 4-dimethylvinylsilylbenzocyclobutene; mixing the tetrakis(dimethylsiloxy)silane and the synthesized 4-dimethylvinylsilylbenzocyclobutene, conducting a reaction under inert atmosphere condition, adding tetrahydrofuran solution containing a catalyst, maintaining inert atmosphere condition, and conducting heating and mixing under 75-85 DEG C until the reaction is finished to obtain a first material; and separating and purifying the first material to obtain the benzocyclobutene functionalized tetrakis(dimethylsiloxy)silane. The producing method of the invention has the advantages of easy process, easiness to separation, purification and operation, high yield rate, andgood practicality; and the produced benzocyclobutene functionalized organosiloxane resin has excellent performance, and is suitable for the fields of microelectronics, aerospace and national defense.

Description

Technical field [0001] The present invention relates to the field of polymer compounds, and in particular, there is a preparation method of a benzocyclobutyl functionalized tetra (dimethylsiloxy) silane and the preparation method thereof and a resin thereof. Background technique [0002] With the rapid development of aerospace and microelectronics industry, the size of the large scale integrated circuit continues to shrink, the signal processing speed is constantly increasing, requiring the wiring density to increase, resulting in signal transmission delays, crosstalk, and power consumption, have seriously hindered high speed, The development of high-density, low power and multi-functional large scale integrated circuits. Therefore, the super large scale integrated circuit requires interlayer material to meet the excellent performance of low dielectric, low loss, high thermal stability and high molecular performance. [0003] The organosiloxane is widely used in electronic electr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F7/08C08G77/04
CPCC07F7/0879C08G77/04
Inventor 杨军校韦雪莲尹强胡欢李娴范立马佳俊
Owner SOUTHWEAT UNIV OF SCI & TECH
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