Method for preparing perovskite solar cell with high short-circuit current and high conversion efficiency, and product

A solar cell and short-circuit current technology, which is applied in the manufacture of final products, circuits, photovoltaic power generation, etc., can solve the problems of difficult lifting and low short-circuit current, and achieve the effects of improving conversion efficiency, increasing short-circuit current, and accelerating transmission rate

Active Publication Date: 2018-09-07
北京京通光能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently in trans solar cells, the short circuit current is low and difficult to boost

Method used

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  • Method for preparing perovskite solar cell with high short-circuit current and high conversion efficiency, and product
  • Method for preparing perovskite solar cell with high short-circuit current and high conversion efficiency, and product
  • Method for preparing perovskite solar cell with high short-circuit current and high conversion efficiency, and product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Preparation of perovskite solar cells

[0037] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0038] (2) Add 80uL of PEDOT:PSS solution filtered through a 0.22um syringe filter onto the ITO treated in step (1), spin-coat at 8000rpm for 40s, and finally anneal at 120°C for 15min. Prepare PEDOT:PSS hole transport layer;

[0039] (3) One-step spin coating on PEDOT:PSS hole transport layer to prepare MAPbI in step (2) 3-x Cl x Perovskite light-absorbing layer, specifically: heat the whole at 50°C for 35s, then add 50uL MAPbI 3-x Cl xAdd the hot precursor solution dropwise on the PEDOT:PSS hole transport layer in step (2), then spin coat at 1000rpm for 20s, then spin coat at 3500rpm for 35s, and finally place it for 30s and anneal at 100°C for 20min , making MAPbI 3-x Cl x Perovskite light-absorbing layer, where, in MAPbI...

Embodiment 2

[0043] Preparation of perovskite solar cells with high short-circuit current and high conversion efficiency

[0044] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0045] (2) Add 100uL of PEDOT:PSS solution filtered through a 0.22um syringe filter dropwise onto the ITO treated in step (1), then spin-coat at 8000rpm for 40s, and finally anneal at 120°C for 15min. Prepare PEDOT:PSS hole transport layer;

[0046] (3) One-step spin-coating method to prepare MAPbI by interface modification on PEDOT:PSS hole transport layer in step (2) 3-x Cl x Perovskite light-absorbing layer, specifically: the dimethyl sulfoxide solution that the concentration of 60uL is 1mg / mL methyl ammonium iodide is added dropwise on the PEDOT:PSS hole transport layer in step (2), then with 6000rpm Spin coating at a speed of 50s, then heat the whole at 60°C for...

Embodiment 3

[0050] (1) Wash the 15mm×15mm ITO with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 30 minutes, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0051] (2) Add 120uL of PEDOT:PSS solution filtered through a 0.22um syringe filter dropwise onto the ITO treated in step (1), then spin-coat at 8000rpm for 40s, and finally anneal at 120°C for 15min. Prepare PEDOT:PSS hole transport layer;

[0052] (3) One-step spin-coating method to prepare MAPbI by interface modification on PEDOT:PSS hole transport layer in step (2) 3-x Cl x Perovskite light-absorbing layer, specifically: the dimethyl sulfoxide solution that the concentration of 60uL is 4mg / mL methyl ammonium iodide is added dropwise on the PEDOT:PSS hole transport layer in step (2), then with 8000rpm Spin coating at a speed of 40s, then heat the whole at 70°C for 25s, then add 50uL of MAPbI3-xClx hot precursor liquid onto the methyl ammonium iodide layer, and then spin co...

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Abstract

The invention relates to a method for preparing a perovskite solar cell with high short-circuit current and high conversion efficiency, and a product, and belongs to the technical field of photovoltaics. The method comprises the following steps: firstly, a layer of methyl iodide amine is spin-coated on a hole transport layer; and then a hot precursor solution of MAPbI3-xClx is spin-coated on the methyl iodide amine layer; when the hot MAPbI3-xClx precursor solution is dropped onto the methyl iodide layer, the spin-coated methyl iodide layer is dissolved again, so that the concentration of iodine at the interface between the hole transport layer and an MAPbI3-xClx perovskite light absorbing layer is greater than that at other positions of the MAPbI3-xClx perovskite light absorbing layer; after annealing crystallization at the later stage, an iodide ion concentration gradient is formed on the MAPbI3-xClx perovskite layer at the interface between the hole transport layer and the MAPbI3-xClx perovskite light absorbing layer, and such a halogen concentration gradient increases the position of the perovskite conduction band, thereby facilitating the transport of holes, and further increasing the short circuit current and the conversion efficiency. The method is simple and easy to operate, can be directly promoted in large scale in industrial production, and has a potential application value in solar cells.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a preparation method and product of a perovskite solar cell with high short-circuit current and high conversion efficiency. Background technique [0002] As a new energy source, solar cells have the advantages of safety, reliability, no noise, no pollution, and long service life. Solar cells have experienced the development of the first generation of monocrystalline silicon and polycrystalline silicon, and the second generation of thin film materials such as cadmium telluride (CdTe), copper indium gallium selenide (CuInGaSe) and amorphous silicon. Although the first-generation and second-generation solar cells have played a positive role in the national economy and national defense and military fields, they also face some major problems. Among them, the purity of monocrystalline silicon is required to be 99.999%, the production cost is high, and silicon-based so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/10H10K30/80Y02E10/549Y02P70/50
Inventor 臧志刚王明
Owner 北京京通光能科技有限公司
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