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Low-temperature preparation method of lubricating/conducting dual-function NbSe2 thin film

A dual-function, thin-film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that cannot meet the needs of industrial applications, low material deposition rate, high preparation temperature requirements, etc., to achieve excellent lubrication/ Conductive dual function, dense and uniform structure, good bonding strength

Active Publication Date: 2018-09-11
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, the pulsed laser deposition method requires a high-efficiency pulsed laser and a complex optical system, which significantly increases the cost of its equipment
Moreover, limited by the energy of the pulsed laser, the deposition rate of some materials is low
In addition, for the atmospheric pressure chemical vapor deposition method, NbCl 5 It is a commonly used raw material. This material is a toxic substance, which is very dangerous during the preparation process and inevitably brings certain environmental pollution.
Moreover, due to the limitation of the preparation method itself, the preparation temperature is required to be higher than 300°C, which greatly increases the preparation cost
It can be seen that this method cannot meet the needs of industrial applications

Method used

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  • Low-temperature preparation method of lubricating/conducting dual-function NbSe2 thin film
  • Low-temperature preparation method of lubricating/conducting dual-function NbSe2 thin film
  • Low-temperature preparation method of lubricating/conducting dual-function NbSe2 thin film

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Experimental program
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Effect test

Embodiment 1

[0034] NbSe 2 The target material and the Ti target material were respectively installed on the corresponding target positions of the radio frequency magnetron sputtering coating chamber; single crystal silicon, soda lime glass or steel was used as the substrate, and ultrasonically cleaned in absolute ethanol and acetone reagent solutions for 15 min respectively, After natural drying, it is placed on the rotating workpiece plate in the chamber. During the entire sputtering coating process, the rotating speed of the rotating workpiece disk was kept at 1.0 r / min. The substrate temperature is at room temperature; turn on the vacuum system and evacuate to 7×10 -4 Pa, argon gas was introduced, under the conditions of pressure of 1.5 Pa, duty cycle of 80%, and pulse bias of -600 V, the substrate was cleaned by plasma sputtering for 15 min to remove the oxide layer on the surface of the substrate and impurities; then, Ti transition layer deposition. Introduce argon gas, use a DC ...

Embodiment 2

[0037] The target material and installation process are the same as in Example 1; the substrate surface is cleaned, the plasma sputtering cleaning process and the rotation speed of the rotating workpiece disk are the same as in Example 1; then, the Ti transition layer is deposited. Introduce argon gas, use a DC power supply, and deposit a Ti transition layer for 4 min under the conditions of a pressure of 0.8 Pa, a pulse bias of -50 V, and a Ti target current of 0.3 A. The thickness of the Ti transition layer is about 30 nm; , for NbSe 2 thin film deposition. Turn off the DC power supply and turn on the RF power supply at the same time, when the RF power density is 0.068 W / mm 2 , the working pressure is 0.5 Pa, the initial temperature is 28 ℃, the substrate bias is -150 V, and the duty cycle is 80%, the deposition of NbSe 2 film for 1.8 h; finally, after the deposition, the chamber temperature was 40°C, and the film was naturally cooled to room temperature.

[0038] image...

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Abstract

The invention discloses a low-temperature preparation method of a lubricating / conducting dual-function NbSe2 thin film. The method takes argon gas (with the purity of 99.99 percent) as sputtering gasand NbSe2 (with the purity of 99.99 percent) as a sputtering target, and takes a radio frequency power supply used as a sputtering source to prepare the lubricating / conducting dual-function NbSe2 thinfilm. By adopting the method disclosed by the invention, low-temperature rapid deposition of the thin film is realized. The solid thin film has a uniform and dense structure, relatively good film-base bonding strength and good preferred orientation; under an atmospheric environment (with 30 percent RH and the temperature of 20 DEG C), the solid thin film has excellent tribological performance (the friction coefficient is about 0.033) and good conducting performance (the static contact resistance is about 1.76*10<-3>ohm*cm); under a dynamic contact sliding mode, the solid thin film still has excellent lubricating / conducting dual-function. The NbSe2 thin film has a wide application prospect in the field of surface treatment of an electric contact sliding part.

Description

technical field [0001] The invention belongs to the technical field of film material preparation, and relates to a lubricating / conducting dual-function NbSe 2 Low-temperature preparation method of thin film. Background technique [0002] For a long time, silver-based and copper-based alloy materials have been the main materials for electrical contact sliding parts, which can ensure the smooth operation of sliding parts in the state of electrical conduction. However, silver-based and copper-based alloy materials have high friction coefficients and high wear rates, which account for most of the power loss of components and affect current transmission and conversion efficiency. According to previous reports, the preparation of NbSe under a certain process 2 The material can play a good lubricating role in dry atmosphere and vacuum environment; and in the research of superconductivity, its room temperature conductivity is obviously better than that of homologous materials (suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/16C23C14/18
CPCC23C14/0623C23C14/165C23C14/185C23C14/3485C23C14/352
Inventor 郝俊英刘金玉徐书生刘维民
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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