Low-temperature silver paste for low-density HIT solar cell and preparation method thereof

A solar cell, low-density technology, used in circuits, electrical components, conductive materials dispersed in non-conductive inorganic materials, etc. , the effect of unit cost reduction

Inactive Publication Date: 2018-09-28
苏州瑞力博新材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, spherical silver powder with an average particle size of 2-20um, a specific surface area of ​​0.1-2.0 square meters per gram, and a bulk density of 3-10 grams per cubic centimeter is used as the conductive filling ma

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0025] Example 1

[0026] The preparation method of the low-temperature silver paste for low-density HIT solar cells of this embodiment is to accurately weigh 270 grams of bisphenol A epoxy resin and 80 grams of butyl glycidyl ether and mix them thoroughly, and continue to add 650 grams of silver paste under stirring conditions. Flaky low bulk density silver powder with an average particle size of 5um and a bulk density of 1.17 g / cm3. Stir at room temperature for 30 minutes to ensure that the silver powder is evenly dispersed in the epoxy resin, then add 4 grams of maleic anhydride and then disperse for 1 hour, and degas under low pressure to obtain a low-temperature silver paste for low-density HIT solar cells. The specific characteristics are as follows:

[0027] Viscosity: 152,500mPa.s

[0028] Adhesive strength: 7MPa (adhesive substrate is aluminum)

[0029] Density: 1.15 g / cm3

[0030] Curing speed: 12 minutes (120°C)

[0031] Volume resistivity: 2.6×10 -5 Ω.cm

[0...

Example Embodiment

[0036] Example 2

[0037] The preparation method of the low-temperature silver paste for low-density HIT solar cells of the present embodiment is to accurately weigh 280 grams of cyclopentadiene epoxy resin and 60 grams of ethyl acetate and fully mix them, and continue to add 700 grams of flakes under stirring conditions. Low bulk density silver powder, with an average particle size of 13um and a bulk density of 1.56 g / cm3. Stir at room temperature for 30 minutes to ensure that the silver powder is evenly dispersed in the epoxy resin, then add 3 grams of diethylenetriamine and disperse for 1 hour, and degas under low pressure to obtain a low-temperature silver paste for low-density HIT solar cells. The specific characteristics are as follows:

[0038] Viscosity: 230,000mPa.s

[0039] Adhesive strength: 9MPa (adhesive substrate is aluminum)

[0040] Density: 1.52 g / cm3

[0041] Curing speed: 20 minutes (120°C)

[0042] Volume resistivity: 1.8×10 -5 Ω.cm

[0043] Volume re...

Example Embodiment

[0045] Example 3

[0046] The preparation method of the low-temperature silver paste for low-density HIT solar cells of this embodiment is to accurately weigh 300 grams of glycerin epoxy resin and 50 grams of benzyl alcohol and mix them thoroughly, and continue to add 580 grams of needle-shaped low bulk density under stirring Silver powder has an average particle size of 7um and a bulk density of 1.33 grams per cubic centimeter. Stir at room temperature for 30 minutes to ensure that the silver powder is evenly dispersed in the epoxy resin, then add 3.5 grams of phthalic anhydride and then disperse for 1 hour, and degas under low pressure to obtain a low-temperature silver paste for low-density HIT solar cells. The specific characteristics are as follows:

[0047] Viscosity: 92,500mPa.s

[0048] Adhesive strength: 6MPa (adhesive substrate is aluminum)

[0049] Density: 1.28 g / cm3

[0050] Curing speed: 7 minutes (120°C)

[0051] Volume resistivity: 7.6×10 -5 Ω.cm

[0052]...

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Abstract

The invention relates to a low-temperature silver paste for a low-density HIT solar cell, and a preparation method thereof. The low-temperature silver paste for the low-density HIT solar cell comprises low-apparent density silver powder, resin monomer, solvent, and an initiator for resin monomer curing; the weight percent of the low-apparent density silver powder in the low-temperature silver paste for the HIT solar cell is 30-90%, the weight percent of the resin monomer in the low-temperature silver paste for the HIT solar cell is 0.1-10%, and the weight percent of the curing initiator in thelow-temperature silver paste for the HIT solar cell is 0.1-5%. The-temperature silver paste disclosed by the invention has the advantages that the low-apparent density silver powder is creatively used for preparing the low-temperature silver paste for the low-density HIT solar cell, the low-temperature silver paste for the low-density HIT solar cell with low density and high conductivity is prepared by selecting the silver powder size, the morphology and apparent density under the low silver powder adding amount. The silver powder adding amount is reduced in the premise of guaranteeing the conductivity, the manufacturing cost of the low-temperature silver paste for the low-density HIT solar cell is greatly reduced, and the density of the low-temperature silver paste for a low-density HITsolar cell can be reduced a half and more by using the low-apparent density silver powder, thereby greatly reducing the consumption of the low-temperature silver paste in the manufacturing of the HIT.

Description

technical field [0001] The invention relates to the field of polymer-based conductive materials, in particular to a low-temperature silver paste for low-density HIT solar cells and a preparation method thereof. Background technique [0002] A solar cell is a photoelectric device that directly converts sunlight energy into electrical energy through the photovoltaic effect. Traditional solar cells are crystalline silicon solar cells. In recent years, the industry has introduced a heterojunction (Heterojunction with Intrinsic Thin-layer, HIT) solar cell. Heterojunction technology (HIT) combines the dual advantages of crystalline silicon solar cells and thin film technology, depositing intrinsic and doped amorphous silicon thin films and transparent conductive oxide (TCO) films on both sides of n-type silicon wafers to Absorb the electricity generated, because amorphous silicon has the characteristics of strong light absorption and excellent passivation performance, it can achi...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/04H01B1/22
Inventor 孙玉海李志明宋艳朱江
Owner 苏州瑞力博新材科技有限公司
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