An infrared transparent window with electromagnetic shielding function and its preparation method
A transparent window and electromagnetic shielding technology, which is applied in the field of infrared transparent window and its preparation, can solve the problems of affecting the electromagnetic shielding efficiency and the unsatisfactory conductivity of the film, so as to prevent the decline of infrared transmittance, high infrared transmittance, infrared The effect of high transmittance
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Embodiment 1
[0043] The sapphire substrate and uniformly doped AZO film form an infrared transparent window.
[0044] Step 1: Select a clean sapphire substrate with a 0.2° deviation angle between the surface and the c crystal plane, a thickness of 430 μm, and double-sided polishing.
[0045] Step 2: Send the substrate into the reaction chamber of the MOCVD equipment, and let the tray rotate at a speed of 750 rpm;
[0046] Step 3: The temperature of the reaction chamber is raised to 400° C.; at the same time, 10 slm of supplementary argon gas is introduced into the reaction chamber, and the pressure of the reaction chamber is controlled at 10 Torr through the pressure control system.
[0047] Step 4: Immerse the bubbling bottles filled with triethylzinc, deionized water, and trimethylaluminum in three constant temperature water tanks, and control the temperature of the bubbling bottles to 25°C, 25°C, and 2°C through the constant temperature water tanks, and The pressures of the three bubbl...
Embodiment 2
[0053] The sapphire substrate and the stacked film containing non-uniformly doped GZO form an infrared window.
[0054] Step 1: Select a clean sapphire substrate with a 0.2° deviation angle between the surface and the c crystal plane, a thickness of 430 μm, and double-sided polishing.
[0055] Step 2: Send the substrate into the reaction chamber of the MOCVD equipment, and let the tray rotate at a speed of 750 rpm;
[0056] Step 3: The temperature of the reaction chamber was raised to 900° C. and kept stable; at the same time, 10 slm of supplementary argon gas was introduced into the reaction chamber, and the pressure of the reaction chamber was controlled at 760 Torr through the pressure control system.
[0057] Step 4: Immerse the bubbler bottles containing triethylzinc, deionized water, and triethylgallium in three constant temperature water tanks, and control the temperature of the bubbler bottles at 25°C, 25°C, and 2°C through the constant temperature water tanks, and Th...
Embodiment 3
[0066] The sapphire substrate and uniformly doped ITO film form the infrared window.
[0067] Step 1: Select a clean sapphire substrate with a 0.2° deviation angle between the surface and the c crystal plane, a thickness of 400 μm, and double-sided polishing.
[0068] Step 2: Adopt In 2 o 3 and SnO 2 The mixed target material, the mass content ratio in the target material is In 2 o 3 :SnO 2 =1000:1.
[0069] Step 3: The substrate is sent into the growth chamber of the magnetron sputtering equipment, nitrogen gas of 20 sccm is introduced, and the pressure of the growth chamber is reduced to 0.1Pa.
[0070] Step 4: Adjust the sputtering power to 75W.
[0071] Step 5: Control the growth time to grow a 2400nm ITO semiconductor crystal film on the surface of the substrate.
[0072] Step 6: Keep supplementary nitrogen flowing into the reaction chamber, backfill the reaction chamber to atmospheric pressure, and take samples.
[0073] Step 7: Perform rapid thermal annealing a...
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