Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for recycling and reusing all components of LED-MOCVD (Light Emitting Diode-Metal Organic Chemical Vapor Deposition) preparation process tail gas through pressure swing adsorption in whole temperature process

A technology of pressure swing adsorption and full temperature range, which is applied in separation methods, ammonia preparation/separation, chemical instruments and methods, etc., and can solve the problems such as difficult purification and recovery of H2/NH3

Active Publication Date: 2018-10-16
SICHUAN TECHAIRS
View PDF7 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The present invention provides a method for recovering and reusing all components of LED-MOCVD tail gas with full temperature range pressure swing adsorption to solve the problem that the existing purification and recovery of H2 / NH3 reuse process is restricted by the original different front-end pretreatment of LED-MOCVD tail gas. The treatment process is also subject to the fixed back-end and different purification processes, making it difficult to purify and recover H2 / NH3 technical problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recycling and reusing all components of LED-MOCVD (Light Emitting Diode-Metal Organic Chemical Vapor Deposition) preparation process tail gas through pressure swing adsorption in whole temperature process
  • Method for recycling and reusing all components of LED-MOCVD (Light Emitting Diode-Metal Organic Chemical Vapor Deposition) preparation process tail gas through pressure swing adsorption in whole temperature process
  • Method for recycling and reusing all components of LED-MOCVD (Light Emitting Diode-Metal Organic Chemical Vapor Deposition) preparation process tail gas through pressure swing adsorption in whole temperature process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Such as figure 1 As shown, a LED-MOCVD process exhaust gas full temperature range pressure swing adsorption full component recovery and reuse method, the raw material gas, that is, normal pressure or low pressure MOCVD (metal oxide chemical vapor deposition) preparation based on gallium nitride (GaN) The exhaust gas in the light-emitting diode (LED) process grown on epitaxial wafers is mainly composed of nitrogen (N2): 46% (v / v, the same below), hydrogen (H2): 34%, ammonia (NH3): 19% , the remaining 1% is a small amount of metal ions, particles, arsine, methane (CH4), water (H2O), carbon monoxide (CO), carbon dioxide (CO2), oxygen (O2) and other impurity components, the pressure is normal pressure, The temperature is 50-70°C, and the specific implementation steps include:

[0058] (1) Pretreatment, the raw material gas is sent to the pretreatment unit consisting of a dust collector, a particle filter, and an oil mist collector through a blower. Under the operating cond...

Embodiment 2

[0069] Such as figure 1 As shown, on the basis of Example 1, the raw material gas temperature is 20-30°C, and the rest remain unchanged. The high-temperature product gas generated in the hydrogen purification process is heat-exchanged with the raw material gas to restore its temperature to 50-70°C, and Carry out operation by embodiment 1. The purpose is to prevent the high concentration of ammonia in the raw gas from easily escaping into liquid at a temperature of 20°C lower than the ambient temperature and damaging the equipment in the pretreatment process.

Embodiment 3

[0071] Such as figure 1 As shown, on the basis of Example 1, the raw material gas temperature is 100-120°C, and the rest remains unchanged, and the normal operation can be directly carried out as in Example 1, wherein the pretreated raw material gas is pressurized to 3.0MPa, and the pressure is changed at medium temperature. The operating pressure of the adsorption (PSA) concentration process is 3.0MPa, and the operating temperature is 100-120°C; the intermediate gas from the medium-temperature pressure swing adsorption (PSA) concentration process and the non-condensable gas from the condensation and freezing process are mixed and then washed with water The operating pressure of the water washing tower is 2.0-2.4MPa, and the operating temperature is 70-90°C; the operating pressure of the temperature swing adsorption purification and pressure swing adsorption hydrogen extraction process is 2.0-2.4MPa, and the operating temperature is 70-90°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for recycling and reusing all components of an LED-MOCVD (Light Emitting Diode-Metal Organic Chemical Vapor Deposition) preparation process tail gas through pressure swing adsorption in a whole temperature process. The method comprises procedures of pretreatment, medium-temperature pressure swing adsorption concentration, variable-temperature adsorption purification, pressure swing adsorption (PSA) hydrogen refining, hydrogen purification, condensation, freezing or ammonia gas distillation, liquid ammonia gasification, pressure swing adsorption ammonia extraction and ammonia gas purification, and hydrogen or ammonia-containing waste gases of the LED-MOCVD preparation process are purified till standards of electron-scale hydrogen (of which the purity is greater than or equal to 99.99999%v / v) and an electron-scale ammonia gas (of which the purity is greater than or equal to 99.99999%v / v) used in the LED-MOCVD preparation process, then recycling and reuseof waste gases are achieved, the hydrogen yield is greater than or equal to 75-86%, and the ammonia gas yield is greater than or equal to 70-85%. By adopting the method, the technical difficulty thata normal-pressure or low-pressure waste gas in the LED-MOCVD preparation process cannot be recycled or reused in the LED-MOCVD preparation process can be solved, and blanks of green and circular economic development of the LED industry can be made up.

Description

technical field [0001] The present invention relates to the field of electronic environmental protection in which process hydrogen (H2) and ammonia (NH3) are prepared in the manufacturing process of semiconductor light-emitting diode (LED), and H2 and NH3 are recovered from waste gas and reused. Process pressure swing adsorption full component recovery and reuse method. Background technique [0002] MOCVD (Metal Oxide Chemical Vapor Deposition) process (equipment) is a modern method and means for the research and production of compound semiconductor materials, especially as a method and equipment for the industrial production of new light-emitting materials-light-emitting diodes (LEDs). Its high quality , high stability, high repeatability and large scale are irreplaceable by other semiconductor material growth methods and equipment. It is the main method and means of producing optoelectronic devices and microwave device materials in the world today. In addition to LEDs, it ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B3/50C01B3/58C01C1/02B01D53/047
CPCB01D53/047C01B3/501C01B3/58C01B2210/0003C01B2210/0014C01B2210/0042C01C1/024
Inventor 钟雨明陈运刘开莉蔡跃明
Owner SICHUAN TECHAIRS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com