An amorphous oxide semiconductor thin film containing Group II elements and thin film transistor

An amorphous oxide, thin film transistor technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as restricting the development of Si-based TFTs, strong photosensitivity of the channel layer, and increasing power, to enhance visible light. Effects of stability, high visible light transmission, good material properties

Inactive Publication Date: 2018-12-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the channel layer material of TFT in industrial production is mainly amorphous silicon ( a -Si) and low temperature polysilicon (LTPS), but a -Si TFT has low mobility (~2 cm 2 / Vs), it is difficult to drive displays larger than 90 inches, and based on polysilicon ( p -Si) technology TFT although high mobility (~100 cm 2 / Vs), but the uniformity of the device is poor, the electrical performance is unstable, and the production cost is high, which limits its application.
At the same time, Si is a semiconductor with an indirect band gap and narrow band gap. It is opaque in the visible light region, and the pixel aperture ratio cannot reach 100%. In order to obtain sufficient brightness, it is necessary to increase the light intensity of the light source, thereby increasing the power.
In addition, the channel layer of Si-based semiconductor material has strong photosensitivity, and a mask plate is required, which also seriously affects the aperture ratio.
These shortcomings restrict the development of Si-based TFTs
[0004] In addition, organic semiconductor thin film transistors (OTFTs) have also been studied more, but the stability of OTFTs is not high, and the mobility is relatively low (~1 cm 2 / Vs), which is a big limitation for its practical application

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: Amorphous ZnMgInO thin film and thin film transistor

[0025] Using the magnetron sputtering method, ZnMgInO ceramic sheet is used as the target material, and the amorphous ZnMgInO thin film is grown at room temperature in an oxidizing atmosphere, which is used as the channel layer. With display glass as the substrate, Al as the gate, source and drain, SiO 2 for the insulating layer. The amorphous ZnMgInO thin film transistor is prepared by using the above thin films.

[0026] The amorphous ZnMgInO film grown at room temperature was tested for its structure, electrical and optical properties. The test results are as follows: the film is amorphous, with a thickness of 10-100 nm and uniform distribution of components; The passing rate is above 91%.

[0027] The prepared amorphous ZnMgInO thin film transistor was tested for its electrical performance, and the test results were: the switching current ratio was 10 6 order of magnitude, with field-effect mob...

Embodiment 2

[0028] Example 2: Amorphous ZnMgAlSnO thin film and thin film transistor

[0029] Using the magnetron sputtering method, ZnMgAlSnO ceramic sheet is used as the target material, and the amorphous ZnMgAlSnO thin film is grown at room temperature in an oxidizing atmosphere, which is used as the channel layer. With display glass as the substrate, Al as the gate, source and drain, SiO 2 for the insulating layer. The amorphous ZnMgAlSnO thin film transistor is prepared by using the above thin films.

[0030] The amorphous ZnMgAlSnO film grown at room temperature was tested for its structure, electrical and optical properties. The test results are as follows: the film is amorphous, with a thickness of 10-100 nm and uniform distribution of components; the band gap at room temperature is 3.5-4.5 eV, and the visible light The passing rate is above 90%.

[0031] The prepared amorphous ZnMgInO thin film transistor was tested for its electrical performance, and the test results were: th...

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Abstract

The invention provides an amorphous oxide semiconductor thin film containing a group II element and a thin film transistor. The semiconductor has a general chemical formula of ZnBMO or ZnBAMO, whereinM=In or Sn, B=Be or Mg or Ca or Sr or Ba, A=Al or Ga or Zr or Hf or Ti or Mg or Si or Ge or Nb or Sc or Y or V or Ta or Cr or W or Re or Ni or Cu or Ag or Au, O is an oxygen element. A correspondingceramic sheet is obtained as a target material through sintering oxide powder matched according to a specific proportion and amorphous oxide film is prepared by pulsed laser deposition. The film is uniform in composition and thickness, and had good optical and electrical properties. The amorphous oxide semiconductor thin film containing group II elements is used as a channel layer to prepare a thin film transistor, and the thin film transistor has remarkable field effect characteristics.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to an amorphous oxide semiconductor thin film containing II group elements and a thin film transistor. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. Regardless of the active matrix liquid crystal display (AMLCD), which is absolutely dominant in the current advanced display market, or the AMOLED (active matrix organic light-emitting diode display), which represents the future trend of flexible display, TFT devices occupy a large part of the pixel drive unit. key position. In addition, TFT devices have been widely researched and applied in biosensing, ultraviolet search and other fields. Therefore, it is of great significance to research and develop TFT devices. The most important component of TFT is its channel layer material, and the research on TFT also focuse...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L29/786H01L21/02
CPCH01L21/02565H01L21/02631H01L29/247H01L29/78693H01L29/78696
Inventor 吕建国陆波静
Owner ZHEJIANG UNIV
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