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HEMT device with polarize junction longitudinal leakage current barrier lay structure and preparation method thereof

A technology of leakage current and barrier layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of increased gate channel on-resistance, device threshold voltage stability and reliability issues, etc., to achieve Improve the breakdown voltage, reduce the longitudinal leakage current, and reduce the effect of device on-resistance

Active Publication Date: 2018-12-14
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The three methods inevitably lead to an increase in the on-resistance of the gate channel in the process of realizing the normally-off mode, or cause problems with the stability and reliability of the device threshold voltage

Method used

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  • HEMT device with polarize junction longitudinal leakage current barrier lay structure and preparation method thereof
  • HEMT device with polarize junction longitudinal leakage current barrier lay structure and preparation method thereof
  • HEMT device with polarize junction longitudinal leakage current barrier lay structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A HEMT device with a polarized junction vertical leakage current blocking layer structure, the schematic diagram of its cross-sectional structure is as follows figure 1 shown.

[0038] The basic composition of the wafer structure from bottom to top is: substrate, which can be Si, SiC, sapphire, GaN, diamond, etc.; buffer layer on the substrate, which can be AlN or AlGaN superlattice structure; drift layer, that is, unintentional Doped i-GaN; polarized junction, that is, the composite structure of the lower AlGaN back barrier layer and the upper p-GaN layer; the channel layer, that is, the i-GaN layer; the main barrier layer, that is, the upper AlGaN layer.

[0039] Its structural characteristics are:

[0040] (1) The 2DEG channel in the gate region is completely cut off, and the device gate current conduction channel is vertical, and it works by applying a positive gate voltage to accumulate channel electrons;

[0041] (2) The source and drain electrodes are ohmic con...

Embodiment 2

[0048] A method for preparing a HEMT device with a polarized junction vertical leakage current blocking layer structure;

[0049] Step ①: wafer growth.

[0050] Using metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) and other semiconductor material growth technologies to sequentially grow buffer layers, 2-10μm i-GaN layers, 5 -100nm AlGaN layer (Al composition is 0.05-0.2), 30-300nm P-GaN layer, 100-300nm i-GaN layer and 10-30nm AlGaN layer (Al composition is 0.1-0.35), such as figure 2 shown.

[0051] Step ②: mesa etching.

[0052] Use semiconductor lithography technology and semiconductor etching technology to produce the mesa required for the device, and use semiconductor etching technology such as reaction-coupled plasma (ICP) based on Cl-based gas to etch the surface by 300-800nm ​​to achieve mesa isolation. Such as image 3 shown. Among them, the semiconductor photolithography technology includes complete steps such as glue leveling, ...

Embodiment 3

[0064] A method for preparing a HEMT device with a polarized junction vertical leakage current blocking layer structure;

[0065] Step ①: wafer growth.

[0066] A 100nm AlN buffer layer, a 4μm GaN layer, and a 10nm Al 0.1 Ga 0.9 N layer, 50nm p-GaN layer, 100nm intrinsic GaN layer and 20nm Al 0.25 Ga 0.75 N layers.

[0067] Step ②: mesa etching.

[0068] Using semiconductor lithography technology to define the required area of ​​the barrier layer, the process is:

[0069] (1) Evenly spin coat the sample with AZ5214 photoresist at a rate of 4000r / min for 30s;

[0070] (2) Place the sample on a hot plate at 100°C for soft drying for 90s;

[0071] (3) Place the sample at a light intensity of 7mW / cm 2 Expose continuously for 20s in the left and right exposure machines;

[0072] (4) develop in developer for 45s;

[0073] (5) Heat the hardened film on a hot plate at 100°C for 60s. Then, through the ICP etching technology based on Cl-based gas, the mesa required for the de...

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Abstract

A HEMT device with a polarize junction longitudinal leakage current blocking lay structure and a preparation method thereof belong to that field of semiconductor devices. A technical key point is thata buffer layer, an i-GaN drift layer, a polarization junction, an i-GaN channel layer, and an AlGaN main barrier layer are sequentially grown on the semiconductor substrate, and the polarization junction is a composite structure formed by an AlGaN back barrier layer and a p-GaN layer thereon. The AlGaN main barrier layer is provided with a drain electrode and a gate electrode. On one side of thegate electrode, the AlGaN main barrier layer and the i-GaN drift layer forms a step, and a source electrode is arranged on the i-GaN drift layer, and AlGaN / i heterojunction is arranged between the gate electrode and the drain electrode. The source electrode and the drain electrode are separated by an insertion layer of a polarization junction. A longitudinal leakage current barrier layer structureof that polarize junction is added, the electric field generated by the strong polarized charge and the built-in electric field in the depletion layer are utilized to effectively repel and reduce theconcentration of the internal background carrier of the device, thereby reducing the longitudinal leakage current and improving the breakdown voltage of the device.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a HEMT device with a polarized junction vertical leakage current blocking layer structure and a preparation method thereof. Background technique [0002] In the past fifty years, solid-state semiconductor power devices have been widely used in various aspects of civil and military fields. At present, they have shifted from traditional industrial control, consumer electronics, and communications to new energy, rail transit, and smart grids. Expansion in emerging fields. In the face of the development requirements of new technology fields, power devices must have the performance characteristics of being able to apply high temperature and high pressure working environment, low power loss and high switching rate. Gallium nitride (GaN) material, as an important candidate material for the current power device manufacturing, not only has the representative characteristics of the th...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/10H01L29/778H01L21/335
CPCH01L29/0638H01L29/1037H01L29/66462H01L29/7787H01L29/7788
Inventor 孙仲豪黄火林
Owner DALIAN UNIV OF TECH
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