A germanium channel field effect transistor device with an optical gate and its manufacturing method

Abstract

The invention discloses a germanium channel field effect transistor device having an optical gate and a manufacturing method thereof. At first, a germanium thin film is deposited on that substrate, and a source-drain region and a channel region are formed by dope in the germanium thin film; Secondly, a gate insulating layer is deposited on the germanium thin film, and the gate insulating layer onthe surface of the channel region is etched, and a certain thickness is left; Amorphous silicon thin film is deposited on the gate insulating layer, and the optical waveguide structure is formed by etching the amorphous silicon thin film as the optical gate. Depositing a protective insulating layer on the surface of the gate insulating layer and the amorphous silicon optical gate; At last, that protective insulate layer is etch to form a contact through hole, and a contact electrode is deposited in the contact through hole to form a germanium channel field effect transistor device with an optical gate. The device of the invention has the advantages of fast opening speed, low power consumption and the like, and has broad application prospects in the fields of high-speed logic devices, ultralarge scale integrated circuits and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and relates to a high-speed, low-power consumption germanium channel field effect transistor device and a manufacturing method thereof. Background technique [0002] Field-effect transistor (MOSFET) is the most basic unit of modern integrated circuits, and is the basis for integrated circuits to realize functions such as operation and storage. The switching speed of a MOSFET device is a key factor in determining the performance of an integrated circuit. Traditionally, the turn-on current of the device has been increased by shortening the channel length of the MOSFET device, thereby achieving faster device switching speed. In a MOSFET device, there is a parasitic capacitance between the gate and the source and drain. During the switching process, the device not only needs to charge and discharge the gate capacitance, but also needs to charge and discharge the parasitic capacitance, which redu...

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Problems solved by technology

[0004] The object of the present invention is to provide a germanium channel effect transistor device based on an optical gate and its manufacturing method for the problem that the parasitic capacitance between the gate and the source and drain of the existing field effect transistor device is difficult to eliminate.

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