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Mn-doped composite film for regulating and controlling resistance switching effect and preparation method thereof

A resistive switch and composite thin film technology, applied in the direction of coating, etc., can solve the problems of restricting the practical application of materials and affecting the resistive switch characteristics of composite thin films, and achieve precise and controllable chemical components, easy control of the preparation process and doping amount, The effect of low temperature

Active Publication Date: 2019-01-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To improve BiFeO 3 The most common method for the multiferroic and ferromagnetic properties of thin films is to do multi-component co-ion doping and composite magnetic films, but when the magnetic film is added, it will affect the ferroelectricity of the upper film, which will further affect the resistance switching characteristics of the composite film. , restricting the practical application of the material

Method used

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  • Mn-doped composite film for regulating and controlling resistance switching effect and preparation method thereof
  • Mn-doped composite film for regulating and controlling resistance switching effect and preparation method thereof
  • Mn-doped composite film for regulating and controlling resistance switching effect and preparation method thereof

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preparation example Construction

[0033] The BGSFMC / C with resistive switching effect 1-x m x The preparation method of FO composite film, comprises the following steps:

[0034] Step 1: Dissolve cobalt nitrate, manganese acetate and ferric nitrate in ethylene glycol methyl ether in a molar ratio of (1-x):x:2, stir evenly, add acetic anhydride, continue stirring evenly, and obtain the bottom film precursor ;wherein x=0.1~0.7;

[0035] Step 2: Spin-coat the bottom layer film precursor solution on the FTO / glass substrate to obtain a wet film. After the wet film is evenly glued, it is baked at 190-195°C to obtain a dry film, and then annealed in air at 660-710°C , to obtain crystalline Co 1-x mn x Fe 2 o 4 film;

[0036] Step 3: The crystalline Co 1-x mn x Fe 2 o 4 The film was cooled to room temperature, and step 2 was repeated until the preset thickness was reached, that is, the underlying Co 1-x mn x Fe 2 o 4 film.

[0037] Step 4: Dissolve bismuth nitrate, gadolinium nitrate, strontium nitrate...

Embodiment 1

[0050] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0051] Step 2: Cobalt nitrate, manganese acetate and ferric nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.9:0.1:2 (x=0.1), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes to obtain metal Stable bottom film precursor solution with a total ion concentration of 0.2mol / L; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0052] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with a UV irradiator for 40 minutes to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the bottom layer film precursor solution on the FTO / glass substrate, and the uniform coating speed The temperature is 4000r / min, a...

Embodiment 2

[0057] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0058] Step 2: Cobalt nitrate, manganese acetate and ferric nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.7:0.3:2 (x=0.3), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes to obtain metal Stable bottom film precursor solution with a total ion concentration of 0.2mol / L; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0059] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and the coating speed is 4000r / min, the mixing ...

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Abstract

The invention provides an Mn-doped composite film for regulating and controlling a resistance switching effect and a preparation method thereof. The film comprises an upper-layer film and a bottom-layer film which are compounded together; the chemical formula of the upper-layer film is Bi0.88Gd0.09Sr0.03Fe0.94Mn0.04Co0.02O3, which is of a polycrystalline twisted perovskite structure, and the spacegroup is R3c; the chemical formula of the bottom-layer film is Co1-xMnxFe2O4, which is of a cubic inverse spinel structure, and the space group is Fd3m, wherein x is equal to 0.1-0.7. A Co1-xMnxFe2O4thin film is prepared through firstly adopting a sol-gel spin-coating method and a layer-by-layer annealing process, and then the spin-coating method and the layer-by-layer annealing process are usedfor preparing a BGSFMC thin film, thereby forming a BGSFMC / C1-xMxFO composite film. The composite film provided by the invention still has relatively good ferroelectricity and resistance switching effect when increasing the ferromagnetism simultaneously.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a composite thin film with Mn doping to regulate resistance switching effect and a preparation method thereof. Background technique [0002] With the rapid development of science and technology, the requirements for miniaturization and diversification of devices are getting higher and higher, which urgently requires the development of new materials with multiple functions to replace single-function materials to meet the development of multi-functional new materials. device requirements. Bismuth ferrite (BiFeO 3 , referred to as BFO), is currently the only single-phase multiferroic material that exists both ferroelectricity and antiferromagnetism at room temperature, and has a relatively high Curie temperature, Neel temperature and large remanent polarization. ERAM, spintronic devices, magnetoelectric memory units, optoelectronic devices and other fields have good application p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/70C03C2217/94C03C2218/116C03C2218/32
Inventor 谈国强薛敏涛柴正军任慧君夏傲刘云
Owner SHAANXI UNIV OF SCI & TECH