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Deep ultraviolet detection device and preparation method thereof

A deep ultraviolet and device technology, applied in semiconductor devices, electrical components, final product manufacturing, etc., can solve the problems of large volume, poor radiation resistance, easy to break and damage, etc., and achieve the effect of high crystal quality

Inactive Publication Date: 2019-03-08
NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the photomultiplier tube has the advantages of large gain, high sensitivity, fast response, and good stability, its disadvantages such as large volume, high energy consumption, poor radiation resistance, high working voltage, and easy damage limit it to a certain extent. its application
Based on the shortcomings of the above-mentioned traditional ultraviolet detectors, wide-bandgap semiconductor materials with strong radiation resistance have received extensive attention, but unintentionally doped wide-bandgap semiconductor materials cannot meet the needs of deep ultraviolet detection. Therefore, research and development of suitable ultraviolet Probe material has important application prospects

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1 Preparation of graphene quantum dot doped ceramic target

[0027] Take 2.0g single-layer graphene oxide, add 1L mass percent concentration and be 10% polyvinyl alcohol aqueous solution, stir to obtain graphene oxide dispersion liquid, add 2g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm and 8g Polymethylpyrrolidone, after uniform dispersion, hydrothermally react at 160℃~300℃ for 1h, finish the reaction, adjust the pH to 2~3 with 2mol / L hydrochloric acid, filter through a microporous membrane of 0.22μm~0.8μm, and use 25% Adjust the pH value of the filtrate to 7 to 8 with ammonia water, filter through a microporous membrane of 0.22 μm to 0.8 μm, extract with ethyl acetate, and evaporate the solvent. The average size of the obtained graphene quantum dots is 8.1 nm, and the size distribution is narrow. Graphene quantum dots coated with zirconia coating and gallium oxide powder with a purity greater than 99.999% were added to...

Embodiment 2

[0028] Embodiment 2 Preparation of graphene quantum dot doped ceramic target

[0029] Take by weighing 2.0g single-layer graphene oxide, add 500ml mass percent concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.5g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm and 6g polymethylpyrrolidone, after uniform dispersion, hydrothermal reaction at 160℃~300℃ for 2h, adjust the pH to 2~3 with 2mol / L hydrochloric acid, filter through a microporous membrane of 0.22μm~0.8μm, adjust with 25% ammonia water The pH value of the filtrate is 7-8, filtered through a microporous membrane of 0.22 μm to 0.8 μm, extracted with ethyl acetate, and the solvent is evaporated to obtain the graphene quantum dots coated with zirconia coating, and the obtained graphene quantum dots and Add gallium oxide powder with a purity greater than 99.999% into ethanol at a mass ratio of 0.02:99.98, ultrasonica...

Embodiment 3

[0030] Embodiment 3 Preparation of graphene quantum dot doped ceramic target

[0031] Take by weighing 2.0g single-layer graphene oxide, add 800ml mass percent concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.8g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm and 10g of polymethylpyrrolidone, after uniform dispersion, hydrothermal reaction at 160℃~300℃ for 0.5h, adjust the pH to 2~3 with 2mol / L hydrochloric acid, filter through a microporous membrane of 0.22μm~0.8μm, and use 25% ammonia water Adjust the pH value of the filtrate to 7-8, filter through a microporous membrane of 0.22 μm to 0.8 μm, extract with ethyl acetate, and evaporate the solvent to obtain graphene quantum dots coated with zirconia coating, and obtain graphene quantum dots Add gallium oxide powder with a purity greater than 99.999% to ethanol at a mass ratio of 0.02:99.98, ultrasonically disperse ev...

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PUM

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Abstract

The present invention relates to a deep ultraviolet detection device and a preparation method thereof, pertaining to the technical field of semiconductor optoelectronic devices. According to the deepultraviolet detection device, a GaN buffer layer is arranged on a sapphire, and then GaN / graphene quantum dot doped gallium oxide / n-type AlGaN super-lattice absorbing layer(s) with the thickness of4-6 [mu]m are arranged. The crystallization quality is extremely high, and the device is very suitable for a deep ultraviolet detector in various extreme environments.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a deep ultraviolet detection device and a preparation method thereof. Background technique [0002] The sun is the strongest ultraviolet light source in nature. Its deep purple band below 280nm wavelength is almost completely absorbed by the ozone layer. The ultraviolet light in this band can hardly reach the ground. Therefore, the ultraviolet light with a wavelength of 200nm-280nm is called the solar blind zone. Correspondingly, people refer to detectors that only generate response signals to deep ultraviolet light in the 200nm-280nm band as solar-blind (or sun-blind) detectors. The ultraviolet light signals in this band detected at low altitude and on the ground generally come from artificial sources, such as ammunition explosions, fires, and environmental pollution. Therefore, solar-blind deep ultraviolet detectors have important appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0352H01L31/18
CPCH01L31/035263H01L31/035272H01L31/109H01L31/18Y02P70/50
Inventor 沈荣存
Owner NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD