Semiconductor chip photo-electro-chemical mechanical polishing machining device

Abstract

The invention discloses a semiconductor chip photo-electro-chemical mechanical polishing machining method and device. A chip is fixedly bonded to a polishing head through electrically-conductive adhesive. The lower portion of the chip is connected with a positive pole of an external power source through wires at an inner ring and an outer ring of an electrically-conductive sliding ring. A polishing pad is bonded to the bottom of a counter electrode disc. The counter electrode disc is fixed to the bottom of a polishing disc, and a through hole is machined in the position, corresponding to the polishing disc, of the counter electrode disc. The counter electrode disc is connected with a negative pole of the external power source through wires at the inner ring and the outer ring of an electrically-conductive sliding ring located above the counter electrode disc. Ultraviolet light transmitted by an ultraviolet light source can be cast to the surface of the chip through the through hole. Apolishing solution can be sprayed into the through hole and enter the contact area of the chip and the polishing pad. By means of the photo-electro-chemical mechanical polishing machining device, themachining method can be well implemented; the machining device has the advantages that the device is easy to operate and implement, and technological parameters can be flexibly adjusted; and the effects that in the practical machining process of the gallium nitride chip, the removal rate is high, and the surface quality achieved after machining is high are achieved.

Description

technical field [0001] The invention relates to the technical field of polishing processing, more specifically to a photoelectrochemical mechanical polishing processing device for semiconductor wafers. Background technique [0002] The third-generation semiconductor representative materials represented by gallium nitride (GaN), silicon carbide (SiC), and diamond have high thermal conductivity, high breakdown electric field, high electron saturation rate and high radiation resistance. Compared with the previous generation of semiconductor materials, it is more suitable for the production of high-temperature, high-frequency, high-power, radiation-resistant high-power devices. [0003] When GaN and SiC crystal materials are used as devices, the materials are required to have high surface quality, no scratches, microcracks, low dislocations, residual stress and other surface / subsurface damage. However, GaN and SiC crystal materials have large bond energy, strong chemical inertn...

AI Technical Summary

Problems solved by technology

[0004] It can be seen that in the process of removing subsurface damage by traditional CMP, the extremely high chemical inertness of the material makes the polishing removal rate extremely low, which leads to a series of problems such as long processing time and high cost.

Images