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A method for preparing high-hardness anti-reflection film based on hollow silicon oxide

A technology of silicon oxide and high hardness, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as harsh environmental conditions, poor mechanical properties of anti-reflection films, and film damage

Active Publication Date: 2021-09-28
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, hollow SiO 2 There are great challenges in the actual use of nanoparticle anti-reflection coatings, because the vacuum glass tubes of solar power stations are generally used outdoors and need to withstand harsh environmental conditions
while hollow SiO 2 The mechanical properties of the nano-particle anti-reflection film are poor, and it is very easy to damage the film and peel off the film due to factors such as finger touch, wind and sand erosion, and repeated rain.

Method used

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  • A method for preparing high-hardness anti-reflection film based on hollow silicon oxide
  • A method for preparing high-hardness anti-reflection film based on hollow silicon oxide
  • A method for preparing high-hardness anti-reflection film based on hollow silicon oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] At room temperature, dissolve 0.12g of polyacrylic acid in 6ml of ammonia water, mix well and add to the rotor, slowly add a mixed solution of 84ml of 2-isopropoxyethanol and 36ml of methanol under stirring, and place it in a water bath at 30°C after the addition is complete After vigorously stirring for 10 minutes, 2ml tetraethyl orthosilicate was added dropwise in 5 times (0.4ml each time), the time interval was 10min, and the mixed solution was sealed and vigorously stirred for 10h to obtain a 60nm hollow SiO 2 Nanoparticle sol. Stir the above sol in a fume hood, and stop stirring when the pH of the solution drops to 7. After the weight percentage of the sol was adjusted to 1.5 wt%, it was recorded as the sol to be coated.

[0031] Put 2 × 10cm glass substrates (light transmittance 92%) in the sequence of 10% hydrochloric acid and 10% NaOH solution for ultrasonic treatment for 70min, the ultrasonic power is 60W, and then use Ultrasonic washing with water ethanol an...

Embodiment 2

[0033] At room temperature, dissolve 0.12g of polyacrylic acid in 6ml of ammonia water, mix well and add to the rotor, slowly add a mixed solution of 84ml of 2-isopropoxyethanol and 36ml of methanol under stirring, and place it in a water bath at 30°C after the addition is complete After stirring vigorously for 10 minutes, 0.2ml tetraethyl orthosilicate was added dropwise in 5 times with a time interval of 10 minutes. After the mixed solution was sealed and stirred vigorously for 10 hours, a hollow SiO with a thickness of 54.5nm was obtained. 2 Nanoparticle sol. Stir the above sol in a fume hood, and stop stirring when the pH of the solution drops to 7. After the weight percentage of the sol was adjusted to 1.5 wt%, it was recorded as the sol to be coated.

[0034] Put 2 × 10cm glass substrates (light transmittance 92%) in the sequence of 10% hydrochloric acid and 10% NaOH solution for ultrasonic treatment for 70min, the ultrasonic power is 60W, and then use Ultrasonic washi...

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Abstract

The invention belongs to the field of optical thin film materials, in particular to a method for preparing a high-hardness antireflection film based on hollow silicon oxide. The method uses tetraethyl orthosilicate as a raw material, polyacrylic acid as a template, 2-isopropoxyethanol and methanol as a solvent, and ammonia as a catalyst to prepare hollow SiO 2 Coating sol, using the pull-dip method to coat double-sided films on glass substrates. After being calcined at 550°C, an anti-reflection film with an average light transmittance of over 98% and a hardness of over 4H in the light transmittance wavelength range of 400-800nm ​​is obtained.

Description

technical field [0001] The invention belongs to the field of optical thin film materials, in particular to a method for preparing a high-hardness antireflection film based on hollow silicon oxide. Background technique [0002] Anti-reflection film plays an important role in new energy photovoltaic power generation and solar thermal power generation technology. A silicon solar photovoltaic cell that has not been treated with anti-reflection film will lose more than 30% of the reflected light on its surface. This fundamentally limits the improvement of photoelectric conversion efficiency. And by coating a layer of anti-reflection film on the photovoltaic module to reduce the solar reflected light on the surface of the glass vacuum tube used in the solar thermal power station by 4%, the system efficiency of the 50MW power station will be increased by more than 10%. [0003] SiO 2 As a material for constructing anti-reflection films, it has been widely used because of its low ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/25C01B33/145
CPCC01B33/145C03C17/006C03C17/25C03C2217/213C03C2217/425C03C2217/732C03C2218/111C03C2218/365
Inventor 陈若愚何鑫李怡雯王红宁刘小华
Owner CHANGZHOU UNIV