Ternary metal oxide thin film catalyst and preparation method thereof

A technology of oxide film and ternary metal, applied in the fields of energy and environment, can solve the problems of complex steps, inflexibility, no bidirectional catalysis, etc., and achieve the effect of large specific surface area, wide application range and high flexibility

CN109513445BActive Publication Date: 2022-05-13INST OF ENGINEERING THERMOPHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-05-13

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Abstract

A ternary metal oxide thin film catalyst and a preparation method thereof, the catalyst includes a substrate and a ternary metal oxide thin layer deposited on the substrate, wherein the ternary metal oxide thin layer contains three metal oxides, each independently Oxides selected from noble metals, transition metals or rare earth metals can be prepared specifically by pulse atomization thermal evaporation chemical vapor deposition. The invention not only can catalyze the oxidative removal of volatile organic pollutants, but also has a certain catalytic effect on the hydrogenation conversion of carbon dioxide, and a relatively large catalyst specific surface area can be obtained with a small amount of catalyst, which is beneficial to the progress of the catalytic reaction.
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Description

technical field

[0001] The invention relates to the technical field of energy and environment, in particular to a ternary metal oxide thin film catalyst and a preparation method thereof, which can be applied to catalytic oxidation of volatile organic pollutants and hydrogenation catalysis of carbon dioxide. Background technique

[0002] Efficient removal of volatile organic pollutants (Volatile Organic Compounds, VOC) and carbon dioxide (CO 2 ) are two hot spots in the field of environment and energy.

[0003] VOC removal methods are mainly divided into two categories: conversion method and recovery method. The former includes combustion method, catalytic oxidation method, biodegradation method, photocatalysis method and plasma removal method, etc. The latter includes activated carbon adsorption method, solution absorption method, etc. method, condensation method and membrane separation method. Among them, the catalytic oxidation method has a higher CO 2 The advantages of...

Examples

preparation example Construction

[0026] The present invention also provides a method for preparing the aforementioned ternary metal oxide thin film catalyst, comprising the following steps: (1) configuring metal-organic compound solutions of three metals, mixing them as precursor solutions, and the three metals are independently ground is selected from noble metals, transition metals or rare earth metals; (2) A uniform thin layer of ternary metal oxides is formed on the substrate by pulse atomization thermal evaporation chemical vapor deposition.

[0027] Wherein in step (1), the ratio of the obtained ternary metal oxide is adjusted through the concentration ratio of metal organic compounds of three different metals; the concentration of the three metal organic compounds is in the order of mmol / L.

[0028] Wherein step (2) specifically comprises the following steps:

[0029] Sub-step (21) adjust the evaporation temperature, substrate temperature and vacuum degree in the pulse atomization thermal evaporation c...

Embodiment 1

[0035] Preparation of Zn-Zr-Cu oxide thin film catalysts, such as figure 1 shown, including the following steps:

[0036] (1) The organometallic compound solutions of Zn, Zr and Cu are configured respectively, and mixed as a precursor solution, wherein the concentrations of Zn, Zr and Cu three metals in the precursor solution are 5mmol / L;

[0037] (2) Adjust the evaporation temperature in the pulsed spray evaporation–chemical vapor deposition (PSE-CVD) device to 200°C and the substrate temperature to 350°C, Introduce nitrogen and oxygen to maintain the pressure inside the device at 2kPa;

[0038] (3) Spray into the precursor solution at a frequency of 4 Hz and a pulse width of 2.5 ms for evaporation to obtain precursor vapor;

[0039] (4) Use the nitrogen and oxygen that step (2) feeds to transport the precursor vapor to the surface of 1g metal mesh for chemical reaction, and grow a 150nm thick Zn-Zr-Cu oxide thin layer on it, with a thin layer weight of 14mg.

[0040] (5)...