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Silicon carbide crystal and method for manufacturing the same

一种碳化硅、晶体的技术，应用在化学仪器和方法、半导体/固态器件制造、晶体生长等方向，能够解决SiC晶体成长速度缓慢、制程控制困难、复杂等问题，达到降低缺陷密度与残留应力的效果

Active Publication Date: 2019-04-16
GLOBALWAFERS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the growth rate of SiC crystals is slow and very complicated, and a certain temperature gradient must be formed when growing SiC crystals by the PVT method, so it is quite difficult to control the process; once the growth parameters (such as thermal field uniformity, gas phase composition, etc.) Unstable, the SiC crystal structure will easily have defects, including micro-pipe defects and basal planar dislocations, etc.
In particular, micropipe defects are seen as the biggest threat that mainly limits the application of SiC

Method used

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  • Silicon carbide crystal and method for manufacturing the same
  • Silicon carbide crystal and method for manufacturing the same
  • Silicon carbide crystal and method for manufacturing the same

Examples

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Embodiment 1

[0024] see figure 1 As shown, the manufacturing method S100 of the silicon carbide crystal of the present invention includes: step S102, setting a seed layer and raw materials; step S104, forming a stress relief structure on the seed layer, and making the concentration of the dopant in the stress relief structure to be alternating high and low; and step S106 , forming a bulk layer on the stress relief structure.

[0025] In step S102, please refer to figure 2 As shown, the seed layer 100 can be placed in the reactor 200 opposite to the raw material M, for example, the seed layer 100 is placed on the top of the reactor 200 and the raw material M is placed at the bottom of the reactor 200 . The seed layer 100 can be a SiC seed layer, and the material M can be a solid material that can provide Si and C elements required for crystal growth, such as SiC powder or a mixture of Si particles and carbon powder. In addition, the reactor 200 may use a graphite crucible, and the periph...

Embodiment 2

[0035] see Figure 5A and Figure 5B As shown, it shows another embodiment in which the concentration of the dopant changes alternately from high to low in step S104. The difference between this embodiment and Embodiment 1 is that the concentration of the dopant is repeatedly controlled between a first concentration greater than the concentration of the dopant in the seed layer 100 and a concentration lower than the concentration of the dopant in the seed layer 100 The second concentration increases or decreases continuously; if the concentration of the dopant in the seed layer 100 is regarded as the reference concentration, the concentration of the dopant in the stress relief structure 102 described in this embodiment changes alternately. , which means that the concentration of the dopant is repeatedly increased over a period of time from the second concentration to the first concentration (such as Figure 5A shown), or a continuous decrease from the first concentration to ...

Embodiment 3

[0038] see Figure 6A and Figure 6B As shown in FIG. 1 , it shows another embodiment in which the concentration of the dopant changes alternately from high to low in step S104 . The difference between this embodiment and the above-mentioned embodiments is that a first concentration greater than the concentration of the dopant in the seed layer and a concentration of the dopant in the seed layer are applied alternately, or a first concentration greater than the concentration of the dopant in the seed layer is alternately applied. The dopant concentration is a first concentration and a second concentration less than the dopant concentration in the seed layer. If the concentration of the dopant in the seed layer 100 is regarded as the reference concentration, the way in which the concentration of the dopant in the stress relief structure 102 described in this embodiment changes alternately means that the concentration of the dopant changes over a period of time. The concentrat...

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Abstract

A silicon carbide crystal and a method for manufacturing the same are disclosed. The silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low concentration. Therefore, the crystal defects can be significantly reduced.

Description

technical field [0001] The invention relates to an epitaxial structure and a manufacturing method thereof, in particular to a silicon carbide crystal with a stress-relieving structure and a manufacturing method thereof. Background technique [0002] Materials such as silicon (Si) and gallium arsenide (GaAs) have been widely used in semiconductor devices, however, their relatively small energy gap (1.12eV for Si and 1.42eV for GaAs at room temperature) and breakdown voltage are not conducive to High power and high frequency applications. Silicon carbide (SiC) is expected to become an essential material for next-generation semiconductor devices due to its excellent physical and chemical properties, such as wide energy gap, high thermal conductivity and electrical conductivity, high withstand voltage and high saturation electron transfer velocity. [0003] SiC crystals do not exist naturally. At present, large-size SiC single crystal ingots are mainly grown by physical vapor t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B25/00
CPCC30B25/00C30B29/36H01L21/02447H01L21/02378H01L21/02507H01L21/0251H01L21/02529H01L21/02576H01L21/02631H01L29/1608H01L29/36C30B25/02C30B23/005C30B23/025H01L29/32
Inventor 林钦山吕建兴刘建成林嫚萱
Owner GLOBALWAFERS CO LTD
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