Method for preparing copper zinc tin sulfur film by vulcanization annealing in air

A copper-zinc-tin-sulfur and sulfide annealing technology, applied in electrical components, climate sustainability, final product manufacturing, etc., can solve the problems of high requirements for annealing equipment, high cost, and unfavorable large-scale production of copper-zinc-tin-sulfur thin films. , to achieve the effect of low raw material cost, low cost and uncomplicated equipment

Active Publication Date: 2019-05-24
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the existing solid sulfur powder vulcanization annealing technologies all involve vacuum or inert atmosphere (nitrogen or argon), which have extremely high requirements on annealing equipment and are relatively expensive, which is not conducive to the large-scale production of copper-zinc-tin-sulfur thin films

Method used

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  • Method for preparing copper zinc tin sulfur film by vulcanization annealing in air
  • Method for preparing copper zinc tin sulfur film by vulcanization annealing in air
  • Method for preparing copper zinc tin sulfur film by vulcanization annealing in air

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Embodiment 1

[0037] A method for preparing copper-zinc-tin-sulfur thin film by sulfidation annealing in air:

[0038] 1. Immerse the molybdenum-coated glass substrate in common detergent, deionized water, ethanol, and acetone solution in turn, and then ultrasonically clean the deionized water, and clean CuO, ZnO, and SnO 2 The mixed slurry (concentration is 200mg / ml, n(Cu) / n(Sn+Zn)=0.8, n(Zn) / n(Sn)=1.2)) is coated on the surface of molybdenum-coated glass by knife scraping method, Obtain an oxide precursor film;

[0039] 2. Seal the above-mentioned oxide precursor film and 0.3g of sulfur powder in an air environment into a quartz tube with an inner diameter of 2.5cm and a length of 15cm;

[0040]3. After sealing the quartz tube, perform high-temperature heat treatment. Select the tube furnace as the heating source, so that the sulfur powder and the oxide precursor film can be heated from room temperature at the same time. The heating rate is 40°C / min, and finally kept at 580°C. After slo...

Embodiment 2

[0043] A method for preparing copper-zinc-tin-sulfur thin film by sulfidation annealing in air:

[0044] 1. Immerse the soda-lime glass substrate in common detergent, deionized water, ethanol, and acetone solution in sequence, and then ultrasonically clean the deionized water, and clean CuO, ZnO, and SnO 2 The mixed slurry (concentration is 200mg / ml, n(Cu) / n(Sn+Zn)=0.8, n(Zn) / n(Sn)=1.2)) is coated on the surface of soda lime glass by knife scraping method, Obtain an oxide precursor film;

[0045] 2. Seal the above-mentioned oxide precursor film and 0.2g of sulfur powder in an air environment in a quartz tube with an inner diameter of 2cm and a length of 10cm;

[0046] 3. Seal the above-mentioned quartz tube and carry out high-temperature heat treatment. Select a tube furnace as the heating source, so that the sulfur powder and the oxide film start to heat up from room temperature at the same time. The heating rate is 40°C / min, and finally kept at 530°C. After slowly cooling ...

Embodiment 3

[0048] A method for preparing copper-zinc-tin-sulfur thin film by sulfidation annealing in air:

[0049] 1. Immerse the molybdenum-coated glass substrate in common detergent, deionized water, ethanol, and acetone solution in sequence, and then ultrasonically clean the deionized water, and clean CuO, ZnO, and SnO 2 The mixed slurry (concentration is 200mg / ml, n(Cu) / n(Sn+Zn)=0.8, n(Zn) / n(Sn)=1.2)) is coated on the surface of molybdenum-coated glass by knife scraping method, Obtain an oxide precursor film;

[0050] 2. Seal the above-mentioned oxide precursor film and 0.6g of sulfur powder in an air environment in a quartz tube with an inner diameter of 3cm and a length of 25cm;

[0051] 3. After sealing the above-mentioned quartz tube, perform high-temperature heat treatment. Select a tube furnace as the heating source, so that the sulfur powder and the oxide film are heated from room temperature at the same time, the heating rate is 40°C / min, and finally kept at 600°C, kept fo...

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Abstract

The invention discloses a method for preparing a copper zinc tin sulfur film by vulcanization annealing in the air. The method comprises coating a cleaned glass substrate with a mixed paste of CuO, ZnO and SnO2 to form an oxide precursor film; then sealing the oxide precursor film and the sulfur powder in a container resistant to a vulcanization reaction in an air environment; and finally, puttingthe sealed container in a tube furnace or a muffle furnace, and heating the sealed container for a annealing process to obtain the copper zinc tin sulfur film. The method of the invention is simple in high-temperature vulcanization annealing process, cheap in preparation equipment, high in sulfur powder utilization rate, friendly to environment, and suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of solar cell materials and devices, in particular to a method for preparing copper-zinc-tin-sulfur thin films by sulfuration annealing in air. Background technique [0002] As the world's population growth and environmental pollution put increasing pressure on energy, energy issues have attracted more and more attention. Therefore, it is particularly important to find a clean and renewable new energy source to replace the traditional fossil energy source. Compared with other renewable energy sources, solar energy has the advantages of universal sources, safety and pollution-free, and long-term renewable energy, so it has naturally become a more suitable alternative energy source. Solar cells are an efficient way to convert solar energy directly into electricity. [0003] Among many solar cells, compound thin-film solar cells, as a low-cost solar cell, have been extensively developed in recent years. Copp...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 陈桂林蔡慧玲陈水源黄志高
Owner FUJIAN NORMAL UNIV
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