A method to improve the dielectric and pyroelectric properties of relaxor ferroelectric thin films

A ferroelectric thin film and pyroelectric technology, which is applied to the electrical properties of lead magnesium niobate-lead titanate (PMN-PT) thin films, improves the dielectric and pyroelectric properties of relaxor ferroelectric thin films, and can solve the problem of high cost , low dielectric and pyroelectric properties, etc., to achieve the effect of simplifying the annealing process

Active Publication Date: 2022-03-15
XIAN TECH UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] At present, there are three main methods for preparing high-quality PMN-PT thin films: radio frequency magnetron sputtering (RF), pulsed laser deposition (PLD) and metal-organic chemical vapor deposition (MOCVD). Change the target to adjust the composition of PMN-PT
The problems existing in the existing technology are: 1. The cost of making targets according to the different doping contents of rare earth elements is high; 2. The dielectric and pyroelectric properties of the existing ferroelectric thin films are not high

Method used

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  • A method to improve the dielectric and pyroelectric properties of relaxor ferroelectric thin films
  • A method to improve the dielectric and pyroelectric properties of relaxor ferroelectric thin films
  • A method to improve the dielectric and pyroelectric properties of relaxor ferroelectric thin films

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Embodiment 1

[0027] 30ml 0.3mol / L, 0.7PMN-0.30PT doped 2.3% samarium (Sm) ferroelectric thin film preparation, the steps are as follows:

[0028] (1) Preparation of PMN-PT precursor solution: Weigh lead-containing compounds, magnesium-containing compounds, niobium-containing compounds and titanium-containing compounds according to the amount of each element in the configuration 0.70PMN-0.30PT to prepare:

[0029] Wherein: Preparation of lead-containing solution: Weigh 4.28g of lead acetate trihydrate, dissolve it in 10-12ml of ethylene glycol methyl ether solution, and stir it at 60 degrees Celsius to dissolve it without precipitation;

[0030] Preparation of lead-magnesium mixed solution: add 0.48g of magnesium acetate to the lead-containing solution, drop 2-3ml of acetylacetone, and stir at room temperature to obtain a lead-magnesium mixed solution;

[0031] Preparation of lead-magnesium-niobium mixed solution: drop 1.33g of niobium ethoxide and 0.85g of acetylacetone into the lead-magne...

Embodiment 2

[0040]30ml 0.3mol / L, 0.7PMN-0.30PT doped 2.3% praseodymium (Pr) ferroelectric thin film, the steps are as follows:

[0041] (1) Preparation of PMN-PT precursor solution: Weigh lead-containing compounds, magnesium-containing compounds, niobium-containing compounds and titanium-containing compounds according to the amount of each element in the configuration 0.70PMN-0.30PT to prepare:

[0042] Wherein: Preparation of lead-containing solution: Weigh 4.28g of lead acetate trihydrate, dissolve it in 10-12ml of ethylene glycol methyl ether solution, and stir it at 60 degrees Celsius to dissolve it without precipitation;

[0043] Preparation of lead-magnesium mixed solution: add 0.48g of magnesium acetate to the lead-containing solution, drop 2-3ml of acetylacetone, and stir at room temperature to obtain a lead-magnesium mixed solution;

[0044] Preparation of lead-magnesium-niobium mixed solution: drop 1.33g of niobium ethoxide and 0.85g of acetylacetone into the lead-magnesium mixe...

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Abstract

The invention relates to a method for improving the dielectric and pyroelectric properties of a relaxor ferroelectric thin film. The dielectric and pyroelectric properties of the existing ferroelectric thin film are not high, and the dielectric and pyroelectric properties of the relaxor ferroelectric thin film are improved by A / B site doping modification. The present invention comprises the following steps in turn: 1. Prepare PMN-PT precursor solution: 2. Utilize rare earth elements to prepare PMN-PT precursor solution uniformly doped with rare earth elements; 3. Dope PMN-PT precursor solution with rare earth elements On Pt / TiO 2 / SiO 2 Spin coating on the / Si substrate evenly, and the film is annealed and crystallized to obtain PMN‑PT film doped with rare earth elements. The invention remarkably improves the dielectric and pyroelectric properties of the relaxor ferroelectric PMN-PT thin film through the doping of rare earth elements.

Description

technical field [0001] The invention relates to the technical field of preparation of ferroelectric materials, in particular to a method for improving the dielectric and pyroelectric properties of relaxor ferroelectric thin films, especially the use of A / B site doping to improve lead magnesium niobate-lead titanate (PMN -PT) methods for the electrical properties of thin films. Background technique [0002] Relaxor ferroelectric thin film means that the spontaneous polarization of the thin film material decays slowly with time near its Curie temperature Tc within a certain temperature range. Among them, lead magnesium niobate-lead titanate ((1-x)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -xPbTiO 3 ) thin film has good ferroelectricity, dielectricity, pyroelectricity and piezoelectricity, and is mainly used in MEMS sensors, transducers and other fields. The response speed of the thin film device is fast, the response speed can be improved, and the preparation of a large-area device is easy to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/497C04B35/622
CPCC04B35/497C04B35/62218C04B2235/3234C04B2235/40C04B2235/768
Inventor 林大斌苏勇铭周顺刘卫国蔡长龙张德强
Owner XIAN TECH UNIV
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