Method for preparing grid structure transparent conductive film
A transparent conductive film and grid structure technology, applied in the direction of conductor/cable insulation, conductive layer on the insulating carrier, etc., can solve problems such as unreachable, limited application range, large surface roughness, etc., to improve performance and reduce Indicates the effect of roughness
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Embodiment 1
[0027] Such as figure 1 As shown, a release film with a roughness less than 5 nanometers is used as a planarized substrate, and an aqueous solution of graphene prepared by a redox method is used as a conductive ink (viscosity 50-200 cP). Through the roll-to-roll technology, inkjet printing is used to form a graphene grid structure on the surface of the release film, and the conductive grid is dried and cured at 60 degrees Celsius. The lines in the grid have a height of 1 µm, a width of 10 µm, and a pitch of 200 µm. On its surface, the PET substrate is directly laminated by a roll-to-roll hot rolling method. Finally, the conductive grid / PET transparent conductive film is separated from the release film by direct peeling, so as to obtain the conductive grid on the PET substrate, and its surface roughness is less than 5 nanometers.
Embodiment 2
[0029] The difference from Example 1 is:
[0030] Such as figure 1 As shown, a solution of conductive materials such as conductive carbon black, carbon nanotubes, metal particles or conductive polymers is used as the conductive ink. The conductive grid is placed on the surface of the release film by roller printing, micro-contact printing or gravure offset printing. On its surface, adhesives such as epoxy resin, acrylic resin or ethylene-vinyl acetate copolymer are printed by gravure printing, and transparent substrates such as PET, PEN or glass are bonded by rolling.
Embodiment 3
[0032] The difference from Example 1 is:
[0033] Such as figure 1 As shown, a silicon wafer with a silicon oxide layer on the surface (SiO 2 / Si) is a planarized substrate with a surface roughness of less than 1 nanometer. Transfer graphene film grown on the surface of copper foil or nickel film by CVD method to SiO 2 On the surface of the / Si substrate, a graphene film is formed, and the number of layers is less than 10. The graphene film is etched into a grid structure by plasma etching or laser etching. Soluble polymers such as polyimide or polysiloxane are used as transparent substrates, and their solutions are roll-coated on the surface of the conductive grid and cured. Finally, the silicon oxide layer is etched by soaking in 2M molar concentration sodium hydroxide solution, and the conductive grid / transparent substrate and SiO 2 / Si matrix separation.
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