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A heat-sensitive thin film of an uncooled infrared detector and its preparation method

An uncooled infrared and heat-sensitive thin film technology, which is applied in vacuum evaporation coating, coating, sputtering coating, etc., can solve the problems of defect amplification and difficult manufacture of detectors

Active Publication Date: 2021-05-04
IRAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Uncooled infrared detectors made of vanadium oxide thin film materials, titanium oxide, and amorphous silicon are prone to "sunlight blinding" when exposed to sunlight, and the temperature resistance of vanadium oxide thin films needs to be further improved to meet the needs of wafers. The bonding of level packaging and the process window of Getter activation temperature; it is not easy to form a good ohmic contact between the titanium oxide film and metal titanium and other metal films, making the detector difficult to manufacture
[0006] Moreover, after the uncooled infrared detector is upgraded from metal package and ceramic package to wafer-level package, the shortcomings of both are magnified

Method used

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  • A heat-sensitive thin film of an uncooled infrared detector and its preparation method

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preparation example Construction

[0037] The present invention also provides a method for preparing a heat-sensitive thin film of an uncooled infrared detector, comprising the following steps:

[0038] A) Under a protective gas atmosphere, the main metal and the dopant metal are melted and forged to obtain an alloy target;

[0039] The alloy material includes 90-100wt% main metal and 0-10wt% doping metal,

[0040] The main metal is titanium and / or vanadium; the dopant metal is one or more of tungsten, cobalt and molybdenum;

[0041] B) Under an oxygen atmosphere, reactively sputtering the alloy target on the substrate to obtain an intermediate film; the oxygen participates in the reactive sputtering in the form of pulses;

[0042] The peak flow rate of the oxygen pulse is 2-10 sccm, and the trough flow rate of the oxygen pulse is 0.1-1 sccm;

[0043] C) annealing the intermediate film to obtain a heat-sensitive film for an uncooled infrared detector.

[0044] In the present invention, the main metal and the...

Embodiment 1

[0063] Under the Ar gas atmosphere, 49% Ti, 49% V and 2% tungsten are melted and forged in a high-purity furnace to obtain an alloy target;

[0064] The alloy target is installed on the deposition film machine, under the oxygen pulse, the reactive sputtering is carried out on the substrate, and the oxygen flow is quickly controlled by the pulse signal switch of the MFC (Mass flow controller): at the pulse valley value 0.5sccm and the pulse The cycle control is carried out within the peak value of 2sccm, and the time is 2s alternately, the sputtering temperature is 23°C, the sputtering power is 300W, the argon flow rate is 25sccm, the sputtering time is 400s, and the film thickness is obtained by sputtering

[0065] The obtained film was annealed at 300° C. for 50 min to obtain a heat-sensitive film for an uncooled infrared detector.

Embodiment 2

[0067] Under the Ar gas atmosphere, 90wt% Ti, 5wt% V and 5wt% molybdenum were melted and forged in a high-purity furnace to obtain an alloy target;

[0068] The alloy target is installed on the deposition film machine, under the oxygen pulse, the reactive sputtering is carried out on the substrate, and the oxygen flow is quickly controlled by the pulse signal switch of the MFC (Mass flow controller): at the pulse valley value 0.5sccm and the pulse The cycle control is carried out within the peak value of 5sccm, and the time is 4s alternately, the sputtering temperature is 100°C, the sputtering power is 600W, the argon flow rate is 30sccm, the sputtering time is 400s, and the film thickness is obtained by sputtering

[0069] The obtained film was annealed at 400° C. for 20 min to obtain a heat-sensitive film for an uncooled infrared detector.

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Abstract

The invention provides a thermosensitive thin film of an uncooled infrared detector, which is made by oxidation of an alloy material: the alloy material includes 90-100wt% main metal and 0-10wt% doping metal , the main metal is titanium and / or vanadium; the dopant metal is one or more of tungsten, cobalt and molybdenum. The heat-sensitive film in the present invention is mainly doped with binary or ternary metal oxides of vanadium, titanium or vanadium-titanium, which not only improves the temperature resistance of the film, but also causes lattice mismatch after doping some special metals. The temperature coefficient of resistance TCR of the film is higher than that of pure vanadium oxide or titanium oxide film, so that the sensitivity of the uncooled infrared detector made of the heat-sensitive film of the present invention is improved, and at the same time due to the temperature resistance of the film Improved performance and improved "sun blinding" effect. The invention also provides a preparation method of the heat-sensitive thin film of the unrefrigerated infrared detector.

Description

technical field [0001] The invention belongs to the technical field of inorganic membrane materials, and in particular relates to a heat-sensitive thin film of an uncooled infrared detector and a preparation method thereof. Background technique [0002] Uncooled infrared detectors are widely used in the fields of automobiles, security, biomedicine, electric power, smart buildings, forest fire prevention, smartphones and the Internet of Things. In recent years, uncooled infrared detectors have been widely used in civilian fields. [0003] Because the uncooled infrared detector is integrated with an integrated circuit, it is more suitable for mass production than the traditional cooled infrared detector, and it can be popularized and used at low cost, with light weight, low power consumption and portability. [0004] The heat-sensitive thin films used to manufacture uncooled infrared detectors are mainly vanadium oxide thin films, amorphous silicon thin films, and titanium ox...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/58C23C14/08C22C14/00C22C27/02
Inventor 甘先锋王宏臣陈文礼王鹏杨水长
Owner IRAY TECH CO LTD
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