Preparation method of Bi2Te3/Bi2O3/TiO2 ternary heterojunction film

A heterojunction and thin-film technology, applied in the field of nanomaterials, can solve the problems of low utilization rate of sunlight and achieve the effects of simple preparation process, regular shape and stable structure

Active Publication Date: 2019-07-05
INST OF OCEANOLOGY - CHINESE ACAD OF SCI
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention is aimed at TiO 2 For the problem of low utilization rate of sunlight, provide a kind of Bi for photogenerated cathodic protection 2 Te 3 / Bi 2 o 3 / TiO 2 Preparation method of ternary heterojunction thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of Bi2Te3/Bi2O3/TiO2 ternary heterojunction film
  • Preparation method of Bi2Te3/Bi2O3/TiO2 ternary heterojunction film
  • Preparation method of Bi2Te3/Bi2O3/TiO2 ternary heterojunction film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Cut a commercially available titanium plate (purity greater than 99.5%) into a sample of 0.3mm×10mm×20mm, and use pure water and acetone to repeatedly ultrasonically clean it several times, each time for 20 minutes, to remove inorganic or organic particles on the surface of the sample. Impurities, dry at room temperature for later use.

[0042] First, 0.9g ammonium fluoride (NH 4 F) Dissolve in 5mL pure water, then add 12mL hydrogen peroxide (H 2 o 2 ) and 12mL nitric acid (concentration of 65% HNO 3 ) and stir it evenly with a magnetic stirrer to obtain a polishing solution. Immerse the titanium plate sample in the polishing solution, and chemically polish until the surface of the sample is uniform, smooth and free of impurities. After taking it out, alternately ultrasonically clean it twice with pure water and absolute ethanol, each time for 10 minutes, to obtain a clean titanium plate sample.

[0043] Preparation of TiO on the surface of titanium plate sample 2...

Embodiment 2

[0054] Cut a commercially available titanium plate (purity greater than 99.5%) into a sample of 0.3mm×10mm×20mm, and use pure water and acetone to repeatedly ultrasonically clean it several times, each time for 20 minutes, to remove inorganic or organic particles on the surface of the sample. Impurities, dry at room temperature for later use.

[0055] First, 0.9g ammonium fluoride (NH 4 F) Dissolve in 5mL pure water, then add 12mL hydrogen peroxide (H 2 o 2 ) and 12mL nitric acid (concentration of 65% HNO 3 ) and stir it evenly with a magnetic stirrer to obtain a polishing solution. Immerse the titanium plate sample in the polishing solution, and chemically polish until the surface of the sample is uniform, smooth and free of impurities. After taking it out, alternately ultrasonically clean it twice with pure water and absolute ethanol, each time for 10 minutes, to obtain a clean titanium plate sample.

[0056] Preparation of TiO on the surface of titanium plate sample 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a Bi2Te3/Bi2O3/TiO2 ternary heterojunction film. The preparation method comprises the following steps: first, preparing a titanium dioxide (TiO2) nano film on the surface of a titanium plate by means of an anodic oxidation method; and then preparing a bismuth telluride/bismuth oxide binary nano composite material (Bi2Te3/Bi2O3) on the surface of theTiO2 nano film by means of a one-step constant potential deposition method to obtain the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film. X-ray diffraction verifies that the heterojunction film containsthree semiconductor substances: Bi2Te3, Bi2O3 and TiO2. A scanning electron microscope result shows that the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film is composed of a Bi2Te3/Bi2O3 nanoflower anda TiO2 nanotube. An ultraviolet visible diffuse reflection absorption spectrum illustrates that the optical absorption properties of the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film in an ultraviolet visible light range are superior to those of pure TiO2. By applying the Bi2Te3/Bi2O3/TiO2 ternary heterojunction film to photo-produced cathode protection of Q235 carbon steel, the cathode of the Q235 carbon steel can be polarized to below -812 mV, which illustrates that the Q235 carbon steel enters a very good cathodic protection state.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, relates to the preparation of a heterojunction thin film, in particular to a Bi for photogenerated cathodic protection 2 Te 3 / Bi 2 o 3 / TiO 2 Preparation of Ternary Heterojunction Thin Films. Background technique [0002] Metal corrosion is ubiquitous in every corner of the world. It is a destructive erosion caused by irreversible changes between metal materials and the environment. In 2014, the corrosion cost of my country's entire industry was as high as 2.1 trillion yuan. This amazing data has fully demonstrated the great significance of anti-corrosion. Carbon steel is widely used in petrochemical, construction, life, navigation, aviation and other fields due to its excellent mechanical properties and ultra-low manufacturing cost. However, placing carbon steel in a marine environment will quickly lead to generalized corrosion and even more harmful localized corrosion. In the mari...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F13/14C25D5/54C25D9/04C25D11/26
CPCC23F13/14C25D5/54C25D9/04C25D11/26
Inventor 王文成王秀通黄彦良南有博杨黎晖路东柱杨丹许勇
Owner INST OF OCEANOLOGY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap